Low-Power Germanium PNP
Abstract: 2N1377 2n1375 TR526 2N524A 2N3428 2n525a diode GG 64 2N1432 AC123
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 >= 2G524 2Nl057 2N1371 2N1375 ACY16 TRS50 TR650 TR650 2N1997 2N597 2N2382 2N524A TR43A TR43A TR43A 2G525 2G525 2G525 CK658 CKS5C 30 CK65 CK65A 2N1451 TR43 TR43 TR43 2N1447 2N526 ~~:~~ 35 40 TR461 2N237
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2G524
2Nl057
2N1371
2N1375
ACY16
TRS50
TR650
2N1997
2N597
Low-Power Germanium PNP
2N1377
TR526
2N524A
2N3428
2n525a
diode GG 64
2N1432
AC123
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Untitled
Abstract: No abstract text available
Text: 2G524 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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2G524
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2N2614
Abstract: 2N1396 33 16U Low-Power Germanium PNP 2N384 2N295 2N2957 2N2956 ACY20 2G413
Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 • 10 2SA103 2N2797 2N2797 2N2797 MA891 MA891 2N1125 PTC102 NKT240 2G386 15 20 · 25 30 2N1395 2N1396 40005 2N1397 40006 2N59A NKT241 2N1699 ~~~~~9 2SA104 2Nl177 2G413 2G413 2G413 2G403 2N2614 NKT603F ACY30
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2SA103
2N2797
MA891
2N1125
PTC102
NKT240
2G386
2N2614
2N1396
33 16U
Low-Power Germanium PNP
2N384
2N295
2N2957
2N2956
ACY20
2G413
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Newmarket Transistors
Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu
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ST3042
ST3043
3N120
3N121
2N332
2N333
2N335
2N336
2N334
2SCl16
Newmarket Transistors
sgs-ates transistors
2G108
2AC128-01
2N174 RCA
2BD124
2G381
2N109
2G271
2N123
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STC1015E
Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
STC1015E
DTS104
ASY82
DTS103
DTS106
DTS108
NKT12
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GT123
Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
GT123
2N2342
2SB123 transistor
AD166
ST615
2sc180
dts105
2N234
2N235
2N285
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2N3443
Abstract: 2SB383 2SB382 2G271 2N1056 2SA42 2. germanium 2SB201 25a41 ALZ10 T-022
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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2N3443
2G110
TI440
75M5A
200M5
2N2238
MM2552t
MM2554t
400M5A
XT200A
2SB383 2SB382
2G271
2N1056
2SA42
2. germanium
2SB201
25a41
ALZ10
T-022
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2sc113
Abstract: EM 18 OC318 2N1056 2G271 TF75 2G110 2G319 2G524 2SB219
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BSW88
200MSA
15On0
BSW89
BSX81
200M5A
BSX81A
BSX81B
2sc113
EM 18
OC318
2N1056
2G271
TF75
2G110
2G319
2G524
2SB219
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SFT308
Abstract: SFT307 2N2625 2N2209 2N2928 7350-a GT123 2N2624 2N2626 65T1 PNP GE
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
SFT308
SFT307
2N2625
2N2209
2N2928
7350-a
GT123
2N2624
2N2626
65T1 PNP GE
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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SFT337
Abstract: 2SB328 2N2342 2SB328 npn transistor 2SB66 2SB136 2SA65 ASY52 2SB153 2SB154
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
SFT337
2SB328
2N2342
2SB328 npn transistor
2SB66
2SB136
2SA65
ASY52
2SB153
2SB154
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2N1029
Abstract: 2N2211 MP2145 mp2143 2SB237 2n1030 2N115 MP2143A MP2144 MP2144A
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
2N1029
2N2211
MP2145
mp2143
2SB237
2n1030
2N115
MP2143A
MP2144
MP2144A
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ge 142
Abstract: 2sc180 2G140 2SA244 ASY82 2SB450 2SB450A SFT121 SFT142 SFT151
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
ge 142
2sc180
2G140
2SA244
ASY82
2SB450
2SB450A
SFT121
SFT142
SFT151
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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78m5
Abstract: PT2622 2N1841 5U100 2sc180 2N2340 S552 TO114 package 2SC23 2SC24
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
78m5
PT2622
2N1841
5U100
2sc180
2N2340
S552
TO114 package
2SC23
2SC24
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st610 transistor
Abstract: GT123 TIP04 2N2342 2G527 ST615 2sc180 2N117 DTS105 55nt
Text: SYMBOLS & CODES EXPLAINED SYM BO LS & C O D ES COMMON TO MORE T H A N ONE T E C H N I C A L S E C TIO N LINE No. TYPE No. ▼ — + — # - t N e w Type Revised Specifications Non-JEDEC type manufactured outside u :s .a . Switching type, also listed in Section 12
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OCR Scan
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
st610 transistor
GT123
TIP04
2N2342
2G527
ST615
2sc180
2N117
DTS105
55nt
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2sc180
Abstract: 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
2sc180
2SC176
2SC175
2SC76
3N36
2SC177
2SC73
2SC75
2SC77
2SC78
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PDF
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2SA143
Abstract: 2SA94 transistor 2sa143 2N1673 2N370 MT14 ck17a 2N372/33 2SA80 2V464
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
2SA143
2SA94
transistor 2sa143
2N1673
2N370
MT14
ck17a
2N372/33
2SA80
2V464
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1401-1407
Abstract: 2N1424 GT123 TIP04 2N5577 2N5579 MD38 2sc179 data
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT
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OCR Scan
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NPN110.
NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
1401-1407
2N1424
GT123
TIP04
2N5577
2N5579
MD38
2sc179 data
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2n1606
Abstract: 5A53 CK721 2sa525 SA537 SA495 GT123 1441-1225 25a480 TO114 package
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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