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    Central Semiconductor Corp 2N6263 TIN/LEAD

    Transistor GP BJT NPN 120V 3A 2-Pin TO-66 Sleeve (Alt: 2N6263 TIN/LEAD)
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    Samsung Semiconductor 2N6263

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    Bristol Electronics 2N6263 8 1
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    2N6263 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6263 Central Semiconductor Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=120 / Ic=3 / Hfe=20-100 / fT(Hz)=2M / Pwr(W)=20 Original PDF
    2N6263 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=120 / Ic=3 / Hfe=20-100 / fT(Hz)=2M / Pwr(W)=20 Original PDF
    2N6263 API Electronics Short form transistor data Short Form PDF
    2N6263 General Electric Medium power silicon N-P-N transistor. 140V, 20W. - Pol=NPN / Pkg=TO66 / Vceo=120 / Ic=3 / Hfe=20-100 / fT(Hz)=2M / Pwr(W)=20 Scan PDF
    2N6263 Lucas Semiconductors Semiconductor Products Scan PDF
    2N6263 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6263 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6263 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N6263 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6263 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6263 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6263 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6263 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6263 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6263 Unknown Transistor Replacements Scan PDF
    2N6263 RCA Solid State Power Transistor Directory 1976 Scan PDF
    2N6263 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF

    2N6263 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6263

    Abstract: No abstract text available
    Text: 2N6263 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6263 O213AA) 1-Aug-02 2N6263

    2N6263

    Abstract: 2N6264
    Text: SavantIC Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·A wide variety of medium-to-high power, high-voltage applications


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    PDF 2N6263 2N6264 2N6263 2N6264

    TIP310

    Abstract: B0939 B0941 D510 B0581
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 2N6417 2SC3567L 2S036 2SC3567K BUW64B BUW64B BUW64B B02410 2Nl648 BOT290F 40912 2N6263 2N2984 BOT31DF TIP310 2N1650 B0941 B0941 50 tsU~41 ~emel~D PhilipsElec AmperexElec See Index Fujitsu Ltd


    Original
    PDF BOT31CF MJE31C B0581 2S035 2SC3567M B0939 B0939F TIP310 B0941 D510

    Untitled

    Abstract: No abstract text available
    Text: 2N6263 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N6263 O213AA) 30-Jul-02

    2N6263

    Abstract: 2N6264
    Text: Inchange Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・A wide variety of medium-to-high power, high-voltage applications


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    PDF 2N6263 2N6264 2N6263 2N6264

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


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    PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    2N3441

    Abstract: ic 6264 NS2N
    Text: File Number 2N3441, 2N6263, 2N6264 529 Medium-Power Silicon N-P-N Transistors Rugged Devices for Interm ediate, Power Applications in Industrial and Com m ercial Equipm ent Features: T E R M IN A L D E S IG N A T IO N S 2 N 6 2 6 4 . p r e m iu m ty p e fr o m 2 N 3 4 4 1 fa m ily


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    PDF 2N3441, 2N6263, 2N6264 2N6264 I95I3 92CS-I264Z 2N3441 ic 6264 NS2N

    2N3441

    Abstract: VK 27 CT 2n6264
    Text: File Number 2N3441, 2N6263, 2N6264 529 HARRIS SEMICOND SECTOR SbE D M3Q2271 D04Ü425 TT4 * H A S -T -3 3 -C D / Medium-Power Silicon N-P-N Transistors Rugged Devices for Intermediate, Power Applications in Industrial and Commercial Equipment Features: TERMINAL DESIGNATIONS


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    PDF 2N3441, 2N6263, 2N6264 M3Q2271 2N6264. 2N3441 O-213AA 2N6264 VK 27 CT

    2N3441 RCA

    Abstract: No abstract text available
    Text: - G E SOLID STATE 3875081 ÔÏE~D~j| 3fl750fll 00173SS fl G E SOLID STATE 17355 0 1 E D J / w 3?“0? General-Purpose Power Transistors •File Number 529 2N3441, 2N6263, 2N6264 Medium-Power Silicon 'N-P-N Transistors Rugged Devices for Intermediate, Power Applications


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    PDF 3fl750fll 00173SS 2N3441, 2N6263, 2N6264 2N6264: 2N3441 2N6264 2N3441 RCA

    2N6261

    Abstract: No abstract text available
    Text: -Jiolitron [ ^ » © T ©ATTM.©' Devices. Inc MEDIUM VOLTAGE CH IP N UM BER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 06 CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that:


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    PDF 2N3054, 2N3441, 2N6260, 2N6261. 2N6263 C-110 2N6261

    RCA 40313

    Abstract: 40328 RCA411 40318 RCA 2N5415 2N6177 RCA 40373 2N3439 2N3440 40322
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


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    PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40313 40328 RCA411 40318 RCA 2N5415 2N6177 RCA 40373 2N3439 2N3440 40322

    40322

    Abstract: 40374 40373 40328 2N6263 2N3439 2N3441 2N6264 40318 TO-66
    Text: fy = 15 MHz m in ;P j = 10 W max 2N3439 FAMILY [n-p-n] silicon [cont'd] DESCRIPTION V C E O '*usi h FE i/ i_ i «/ •C E R '1" * 1 * C E V » " * ' V V V 350 - - i •c w *C E A V •CEV- " nA r1_« _ V/ m p— . - Or* W V C E (sat) - V 1 1 ■c ■B ’ CE


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    PDF 2N3439 2N3441 2N6263 2N3441* 2N6264 2N3583 40322 40374 40373 40328 40318 TO-66

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N62B7

    Abstract: 2N6263 2N6266
    Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN/PNP 2N6282 thru 2N6287 COMPLEMENTARY DARLINGTON POWER AMPLIFIERS T O -3 GEOMETRY 509-1 Collector connscted to case • NPN 2N6282-84 • PNP 2N6285-87 • High Gain • Monolithic Construction


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    PDF 2N6282-84 2N6285-87 2N6282 2N6287 2N6285 2N6283 2N6286 2N6284 2N62B7 2N62B7 2N6263 2N6266

    NPN Transistor 2N3055

    Abstract: 2n1488 2N344 2N3055 2N5415 2N2102 2N5296 RCA RCA 410 2N3439 2N3440
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]


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    PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 NPN Transistor 2N3055 2n1488 2N344 2N3055 2N5415 2N2102 2N5296 RCA RCA 410 2N3439 2N3440

    2N5296 RCA

    Abstract: RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 2N5415 2N3442 2N6262 40328 2N1482
    Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.


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    PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 2N5296 RCA RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 2N5415 2N3442 2N6262 40328 2N1482

    rca 40411

    Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max


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    PDF 2N3055 2N6371 BD142 2N6253 BD181 BD182 2N6254 BD183 BD450 BD451 rca 40411 RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 rcs258 rca 40363

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    tic 1260 scr texas

    Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
    Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.


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    PDF

    SILICON TRANSISTOR CORP

    Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
    Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 SILICON TRANSISTOR CORP 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


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    PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC ~TS 95D D -f - J J - Ô J 02901 ^ÆEÊSrœu DE ö3t.öb05 Q0Ö2T01 b Devices, Inc. MEDIUM VOLTAGE C H IP IM U M BER N PN SINGLE DIFFUSED MESA TRANSISTOR (FORMERLY 06 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.


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    PDF 2N3054, 2N3441, 2N6260, 2N6261, 2N6263 C-110