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    Rochester Electronics LLC 2N6134

    PNP POWER TRANSISTOR
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    Renesas Electronics Corporation 2N6134

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    Renesas Electronics Corporation 2N6131

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    GTCAP 2N6132

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    Quest Components 2N6132 132
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    GTCAP 2N6131

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    Quest Components 2N6131 85
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    2N613 Datasheets (132)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N613 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N613 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N613 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N613 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N613 Unknown Vintage Transistor Datasheets Scan PDF
    2N613 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N613 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N613 Unknown GE Transistor Specifications Scan PDF
    2N613 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N613 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6130 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
    2N6130 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6130 Central Semiconductor Power Transistors Scan PDF
    2N6130 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N6130 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6130 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N6130 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6130 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2N613 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6129

    Abstract: 2N6131 2N6132 2N6133 2N6134 2N6130
    Text: Inchange Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications


    Original     		PDF 2N6129 2N6130 2N6131 O-220 2N6132 2N6133 2N6134 2N6129 2N6130 2N6131 2N6134

    2N6133

    Abstract: 2N6132 2N6134 2N612 2N6129 2N6131 2n6134 datasheet 2N6130
    Text: Inchange Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications


    Original     		PDF 2N6132 2N6133 2N6134 O-220 2N6129 2N6130 2N6131 O-220) 2N6132 2N6133 2N6134 2N612 2N6131 2n6134 datasheet

    2N6130

    Abstract: 2N6131 2N6129 2N6132 2N6133 2N6134
    Text: SavantIC Semiconductor Product Specification 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications


    Original     		PDF 2N6129 2N6130 2N6131 O-220 2N6132 2N6133 2N6134 2N6129 2N6130 2N6131 2N6134

    2N6138

    Abstract: 2N6116 DSCC 493a 2N6117 2N6118 2N6137 transistor cr
    Text: INCH-POUND NOTICE OF INACTIVATION FOR NEW DESIGN MIL-S-19500/493A NOTICE 2 5 December 2001 MILITARY SPECIFICATION Semiconductor Device, PNPN, Thysistor, Silicon, Programable Unijunction Transistor , Types 2N6116, 2N6117, 2N6118, 2N6137, 2N6138 JAN, JANTX, JANTXV


    Original     		PDF MIL-S-19500/493A 2N6116, 2N6117, 2N6118, 2N6137, 2N6138 MIL-S-19500/493A. 2N6116 DSCC 493a 2N6117 2N6118 2N6137 transistor cr

    2N6133

    Abstract: 2N6132 2N6129 2N6130 2N6131 2N6134
    Text: SavantIC Semiconductor Product Specification 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifier and medium speed switching applications


    Original     		PDF 2N6132 2N6133 2N6134 O-220 2N6129 2N6130 2N6131 O-220) 2N6132 2N6133 2N6131 2N6134

    AF306

    Abstract: 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 2N1524 2N1426 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 2N77 ~~Jg~ 15 20 AF306 2S8188 2N612 2N59 2N60 2N61 2N613 2N1561 ~~~~~~ 25 30 35 40 2N1692 2N1693 2N672 2N673 2N402 2N403 2N700 2N700A 2N3283 2N3284


    Original     		PDF 2N1524 2N1426 2N1526 2N1527 AF147 AF150 AF148 AF200 AF306 2n2654 AF178 Low-Power Germanium PNP AF186 2N3283 2N2672 2N77 GG10M 2N2929

    KT835B

    Abstract: B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518
    Text: POWER SILICON PNP Item Number Part Number Manufacturer Ic Max A V(BR)CEO Min (V) fT hFE Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) PD Max (W) TOper Max (Oe) Package Style I(C) >= 5 A, (Co nt' d) 5 -10 2SB1224 MJF6107 2N61 06 2N6107 40874 2N6134 B0722 2N5872


    Original     		PDF 2SB1224 MJF6107 2N6107 2N6134 B0722 2N5872 2N6318 MJ6701 2SA663 2SA627 KT835B B0544 b0202 2SB75 2SB55B 2SB946 2SB61B 2SB61 2N5981 2SB518

    2N6132

    Abstract: 2N6134 2N6133 2N6129 2N6131 2n6134 datasheet 2N6130
    Text: Product Specification www.jmnic.com 2N6132 2N6133 2N6134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ・Power amplifier and medium speed switching applications


    Original     		PDF 2N6132 2N6133 2N6134 O-220 2N6129 2N6130 2N6131 2N6132 2N6133 2N6134 2N6131 2n6134 datasheet

    2N6131

    Abstract: 2N6129 2N6130 2N6132 2N6133 2N6134
    Text: Product Specification www.jmnic.com 2N6129 2N6130 2N6131 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High power dissipation ・Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ・Power amplifier and medium speed switching applications


    Original     		PDF 2N6129 2N6130 2N6131 O-220 2N6132 2N6133 2N6134 2N6129 2N6130 2N6131 2N6134

    Untitled

    Abstract: No abstract text available
    Text: One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N6137 ABSOLUTE MAXIMUM RATINOS Anode-to-Catrwde FcMward Voltage, V>IC Anade-to-Cathod* Rewrss Voltage, V/K) Gate-to-CaUiod* Forward Voltftge, V€K


    Original     		PDF 2N6137 300mW 125-C -55-C 2NI13T

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2N6136

    Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
    Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum


    Original     		PDF AN548A/D AN548A 2N6136 uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A

    2SB553Y

    Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


    Original     		PDF 2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553

    2N6132

    Abstract: No abstract text available
    Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 10 A PEAK Ib 3.0 A V ce -40 V P diss 50 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C


    OCR Scan     		PDF 2N6132 2N6132

    2N6137

    Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
    Text: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV


    OCR Scan     		PDF MIL-S-19500/493A MIL-S-19500/493 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, MIL-S-19500. T0-18) 2N6137 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX

    2N6137

    Abstract: UNITRODE U-66 UNITRODE SCR unijunction application note
    Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic FEATURES • Available as JAN and JANTX types • — 55°C to +125°C Temperature Range for Timing and Oscillator Circuits • U < 10/jA at T = — 55°C lv ^ 40„A at T = -f125°C • Programmable 77, RBB, lP and lv


    OCR Scan     		PDF 2N6137 10/jA 2N6137 UNITRODE U-66 UNITRODE SCR unijunction application note

    UNITRODE U-66

    Abstract: No abstract text available
    Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic FEATU RES DESCRIPTION • Available as JA N and JAN TX types per MIL standard 1 9 5 00 /4 93 • — 55°C to +125°C Tem perature Range for T im in g and O sc illa to r C irc u its • Ip < IOjuA at T = — 55°C


    OCR Scan     		PDF 2N6137 40juA UNITRODE U-66

    2N6137

    Abstract: unijunction application note
    Text: 2N6137 PUTs Military, Planar, TO-18, Hermetic / - a s ' - o FEATURES • Available as JAN and JANTX types per MIL standard 19500/493 • — to -f-125’ 0 Temperature Range for Timing and Oscillator Circuits • l , < l V A a t T = -55»C I , > 40*A at T = +125'C


    OCR Scan     		PDF 2N6137 2N6I37 MA02172 2N6137 unijunction application note

    2n6027

    Abstract: 2N602S 2n6027 PUT 2N6028
    Text: B a c k to S ilic o n C o n tro lle d R ectifiers 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT


    OCR Scan     		PDF 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2N6116 2n6027 PUT 2N6028

    Unijunction

    Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
    Text: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N


    OCR Scan     		PDF 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2n6116 2n6117 2n6118 Unijunction Programmable unijunction PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit

    Untitled

    Abstract: No abstract text available
    Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C


    OCR Scan     		PDF 2N6132 2N6132

    Untitled

    Abstract: No abstract text available
    Text: MICROSENI CORP/ WATERTOWN SDE » PUTs TBMTTLiB 0G12SMD ETLl • U N I T 2N6137 Military, Planar, TO-18, Hermetic 7 -¿LS~-Ó < FEATURES • Available as JAN and JANTX types per MIL standard 1 9 5 0 0 /4 9 3 • —55°C to -|-125°C Tem perature Range fo r T im ing and O scilla to r C ircu its


    OCR Scan     		PDF 0G12SMD 2N6137 10/zA 13471b3 T-25-09

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N6256

    Abstract: 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 260MHz rc-25 2SA777 770MHz, 2N6256 2N6136 2N6083 A-1489 TRANSISTOR K 1507 2N5944 2N5945 2N5946 2N6080 2N6081