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    2N525 Price and Stock

    Microchip Technology Inc 2N5252

    POWER BJT
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    DigiKey 2N5252 Bulk 100
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    Avnet Americas 2N5252 Bulk 22 Weeks 100
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    Mouser Electronics 2N5252
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    Microchip Technology Inc 2N5252 1
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    Onlinecomponents.com 2N5252
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    General Electric Company 2N525

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    Quest Components 2N525 1
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    New Jersey Semiconductor Products, Inc. 2N5255

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    Bristol Electronics 2N5255 350 1
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    TDK Epcos B69842N5257A200

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    Bristol Electronics B69842N5257A200 1,290
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    Others 2N525

    Bipolar Junction Transistor, PNP Type, TO-5
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    Quest Components 2N525 16
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    2N525 9
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    Find more 2N525 price and stock on Findchips.com

    2N525 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N525 Central Semiconductor PNP GERMANIUM TRANSISTOR Original PDF
    2N525 Central Semiconductor Leaded Devices Scan PDF
    2N525 General Electric Semiconductor Data Book 1971 Scan PDF
    2N525 Germanium Power Devices Germanium PNP Small Signal Transistors Scan PDF
    2N525 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N525 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N525 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N525 Unknown Vintage Transistor Datasheets Scan PDF
    2N525 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N525 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N525 Unknown GE Transistor Specifications Scan PDF
    2N525 Unknown GE Transistor Specifications Scan PDF
    2N525 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N525 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N525 Semitron Alloy Junction Germanium Transistor Scan PDF
    2N525 Semitronics Alloy-junction Germanium Transistors Scan PDF
    2N525 SGS-Thomson Transistor Datasheet Scan PDF
    2N525 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan PDF
    2N525 ZaeriX Short Form Data Catalogue 1972-73 Short Form PDF
    2N5250 API Electronics Short form transistor data Short Form PDF
    ...

    2N525 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		PDF 2N5253 O205AD) 19-Jun-02

    2n5253

    Abstract: No abstract text available
    Text: 2N5253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		PDF 2N5253 O205AD) 1-Aug-02 2n5253

    Untitled

    Abstract: No abstract text available
    Text: 2N5253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		PDF 2N5253 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5250+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5250 Freq10M time2000n

    2N4250 motorola

    Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a


    Original     		PDF BC160 2N3581 MMBA956H5 2N5819 GES5819 TP5819 D29E6 TIS93 2N4250 motorola bc154 KT501S LOW-POWER SILICON PNP BC313-16

    SDT96302

    Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0


    Original     		PDF 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96302 TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD


    Original     		PDF 2N5253 O-205AD)

    2N5253

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD


    Original     		PDF 2N5253 O-205AD) 2N5253

    2N525

    Abstract: No abstract text available
    Text: 2N5252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		PDF 2N5252 O205AD) 17-Jul-02 2N525

    Untitled

    Abstract: No abstract text available
    Text: 2N5252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		PDF 2N5252 O205AD) 19-Jun-02

    B0410

    Abstract: MJ050 STI-3007 STI3007 NS034 2N3439S TO5
    Text: POWER SILICON NPN Ic Item Number Part Number I C -5 10 - 15 20 >= -30 g:~g TRS3006 042R2 042R2 2S0198 2S0860A 40327L 40327S 2SC1050 2N5252 044R4 044R4 044R4 2N5253 044R8 044R8 TRS30X5 t~~g~~ 35 40 TRS30X TRS30X TRS30X B0410 2N6772 BUW40A BUW40A 2N5092 ~~~~98


    Original     		PDF ST13006 TIP48 2SC2022 MST30B STI3007 2N6176 STI30 STI305 O-37var B0410 MJ050 STI-3007 NS034 2N3439S TO5

    2N5252

    Abstract: No abstract text available
    Text: 2N5252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		PDF 2N5252 O205AD) 1-Aug-02 2N5252

    2N525

    Abstract: No abstract text available
    Text: 2N525 Ge PNP Lo-Pwr BJT 35.98 Transistors Bipolar Germanium PNP. 1 of 2 Home Part Number: 2N525 Online Store 2N525 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N525 com/2n525 2N525

    2N404

    Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
    Text: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240


    OCR Scan     		PDF 2N43A' 2N525. 2N44A 2N524. 2N188A 34-6S 2N508, 2N1175 2N1413 2N241A 2N404 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


    OCR Scan     		PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    TO114

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Pa rt N u m b e r M ic ro s e m i P ackage D iv is io n O u tlin e Type Mil ; Data Î 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 2N4866 2N5251 PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, Inc.


    OCR Scan     		PDF 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 TO114

    Untitled

    Abstract: No abstract text available
    Text: t3592 A P I A P I' E LE CT RONI C S E L E C T RONI C S INC INC 93A0032 T-33-15 ^3 loD^S^a DE -T -3 3 -1 5 ' i b 0D00D3H 5 POWERlffANSISTO ENGINEERING BULLETIN I 2N5250 TYPE 2 N 5 2 5 0 ,9 0 AM P N PN SILICON PLANAR P O W iR f RANSESTOR LINEAR hFEFROM 100 mA TO 90 AMPS


    OCR Scan     		PDF t3592 93A0032 T-33-15 0D00D3H 2N5250

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan     		PDF O-111 O-5/39 O-114 2N5415

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


    OCR Scan     		PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    2N19A

    Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
    Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^


    OCR Scan     		PDF 2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924