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    Microchip Technology Inc 2N4877

    POWER BJT
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    Sabritec 2N4877

    Bipolar Junction Transistor, NPN Type, TO-39
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    2N4877 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N4877 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N4877 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF
    2N4877 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N4877 API Electronics Short form transistor data Short Form PDF
    2N4877 API Electronics Short form transistor data Short Form PDF
    2N4877 Central Semiconductor NPN METAL CAN Transistors Scan PDF
    2N4877 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan PDF
    2N4877 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N4877 Diode Transistor Transistor Short Form Data Scan PDF
    2N4877 General Diode Transistor Selection Guide Scan PDF
    2N4877 General Transistor Power Transistor Selection Guide Scan PDF
    2N4877 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N4877 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4877 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4877 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4877 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4877 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4877 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4877 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4877 Unknown Transistor Replacements Scan PDF

    2N4877 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N4877 O205AD) 19-Jun-02

    2n4877

    Abstract: No abstract text available
    Text: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N4877 O205AD) 17-Jul-02 2n4877

    2N4877

    Abstract: No abstract text available
    Text: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N4877 O205AD) 1-Aug-02 2N4877

    2N4033

    Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) *TYP *TYP *TYP *TYP *TYP MAX MAX *ICEO *ICES *ICEV *ICER


    Original     		PDF 2N4030 2N4031 2N4032 2N4925 2N4926 2N4927 2N4928 2N4929 2N4033 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    Untitled

    Abstract: No abstract text available
    Text: 4 AMP NPN Sorted by IC, then VCEO Ratings based on 25˚C case temperature unless otherwise specified PT max IC max A VCEO max (V) hFE min hFE max @Ic (A) VCE(sat) max (V) @ IC (A) fT min (MHz) 2N5296 4 40 30 120 Note 1 1 Note 1 Note 1 36 TO-257 2N6121 4


    Original     		PDF 2N5296 O-257 2N6121 2N5202 2N3766 2N4877 2N5298 2N612

    2n4889

    Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


    Original     		PDF

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


    Original     		PDF 2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252

    bu808 equivalent

    Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
    Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200


    Original     		PDF 2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143

    JANS2N5154

    Abstract: 23302 JANS2N5154L
    Text: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L


    OCR Scan     		PDF

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


    OCR Scan     		PDF 2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h =E VCEO v EBO 'CBO v CBO (V) (HA) (V) @ lc « VCE VCE(SA T) @ >C (mA) 00 (V) (V) (mA) ''C EO *VCER *T (MHz) Cob TYP NF (PF) •on (ns) •off (ns) (dB) *TYP TYP *TYP •TYP


    OCR Scan     		PDF 2N4030 2N4031 2N4032 2N4926 2N4927 2N4928 2N4929

    2N4250

    Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
    Text: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248


    OCR Scan     		PDF 2N4142 2N4143 2N4150 2N4207 T0106 2N4208 2N4209 2N4210 2N4227 2N4250 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260

    2N4314

    Abstract: 2N4033 2N4358 2N4890 transistor 2N4033 2N4030 2N4031 2N4032 2N4036 2N4037
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h-E v CEO v EBO 'CBO v CBO (HA) (V) (V) (V) @ ic « vCE VCE(SA T) ® >C (mA) (V) 00 (mA) ''C EO *VC ER NF »T (MHz) Cob <PF) ••on (ns) •off (ns) (dB) *TYP TYP TYP •TYP


    OCR Scan     		PDF 2N4030 2N4031 2N4032 2N4033 2N4036 2N4897 2N4924 2N4925 2N4926 2N4927 2N4314 2N4358 2N4890 transistor 2N4033 2N4037

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


    OCR Scan     		PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118

    Untitled

    Abstract: No abstract text available
    Text: Ic = 3.0 AMPS DEVICE TYPE PACKAGE 2N1647 2N1648 2N1649 2N1650 T O -111 TO-111 TO-111 TO-111 80 80 80 80 80 120 80 120 6.0 6.0 6.0 6.0 20.0 20.0 20.0 20.0 15 15 30 30 - 45 45 90 90 0.5 0.5 0.5 0.5 10.0 10.0 10.0 10.0 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 0.1 0.1


    OCR Scan     		PDF 2N1647 2N1648 2N1649 2N1650 2N2101 2N2849 2N2849-1 2N2849-2 2N2850 2N2850-1

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


    OCR Scan     		PDF