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    2N4427 TRANSISTOR Search Results

    2N4427 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N4427 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4427

    Abstract: BFR98 transistor 2N4427 2n4427-bfr98
    Text: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF 2N4427 BFR98 2N4427 BFR98 2N4427-BFR98 transistor 2N4427 2n4427-bfr98

    Transistor 2n4427

    Abstract: No abstract text available
    Text: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.


    Original     		PDF 2N4427 2N4427 100mA, 100mA 360mA 200MHz 100mW, 175MHz Transistor 2n4427

    2n4427

    Abstract: transistor 2N4427 high frequency transistor 2N4427 equivalent
    Text: 2N4427 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS 400 mA IC VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C


    Original     		PDF 2N4427 2N4427 transistor 2N4427 high frequency transistor 2N4427 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2N4427 w w w. c e n t r a l s e m i . c o m SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4427 is a silicon types are silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications.


    Original     		PDF 2N4427 2N4427 100mA, 100mA 360mA 200MHz 100mW, 175MHz

    2n3866

    Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


    Original     		PDF 2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427

    2n4427

    Abstract: 2N3866
    Text: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the


    Original     		PDF 2N3866; 2N4427 O-39/1 2N3866 2n4427 2N3866

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


    Original     		PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421

    SRK-2001

    Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


    Original     		PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 SRK-2001 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 solitron transistors 2N5016

    2n4427

    Abstract: 62503
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


    Original     		PDF 2N4427 To-39 2N4427 62503

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


    Original     		PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


    Original     		PDF 2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA


    Original     		PDF 2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559

    Untitled

    Abstract: No abstract text available
    Text: 2N4427 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)400m# Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition)12


    Original     		PDF 2N4427 Freq500M

    a7f transistor

    Abstract: 2N4427 BFR98 npn zg Transistor 2n4427 A-7-F
    Text: r Z Z SCS-THO M SO N ^7# 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and os­ cillator applications.


    OCR Scan     		PDF 2N4427 BFR98 2N4427 BFR98 2N4427-BFR98 a7f transistor npn zg Transistor 2n4427 A-7-F

    2n4427

    Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
    Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.


    OCR Scan     		PDF 711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640

    2n4427 MOTOROLA

    Abstract: 2N4427
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4427 The R F Line 1 W - 1 7 5 MHz NPN SILICON HIGH FREQUENCY TRANSISTOR HIGH FREQUENCY TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator N PN SILIC O N applications in m ilita ry and industrial equipm ent. Suitable fo r use


    OCR Scan     		PDF 2N4427 2n4427 MOTOROLA 2N4427

    t 3866 power transistor

    Abstract: transistor 3866 s t 3866 transistor transistor 3866
    Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.


    OCR Scan     		PDF bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866

    4427B

    Abstract: 2N4427 FR98 SGS-Thomson
    Text: SGS-THOMSON 2 N 4427 B F R 98 R iiæ m iM Q iO g i VHF O SCILLATO R POW ER AM PLIFIER D E SC R IPTIO N The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Je d e c T O -39 metal case. They are designed to r VH F class A, B, or C amplifier and o s­


    OCR Scan     		PDF 2N4427 BFR98 2N4427-BFR98 4427B FR98 SGS-Thomson

    2N4427 equivalent

    Abstract: RCA-2N4427 2N4427 2n4427 rca Trimmer ARCO Transistor 2n4427
    Text: File No. 228 roQBZ/D RF Power Transistors Solid State Division _ 2N4427 Silicon N-P-N Overlay Transistor High-G ain D river fo r V H F -U H F Features: • 1 W o u tp u t w ith 10 d B gain m in . at 1 7 5 M H z VCC - 12 V ■ 0 .4 W o u tp u t w ith 5 d B gain (ty p .) a t 470 M H z


    OCR Scan     		PDF 2N4427 RCA-2N4427 2N4427 equivalent 2N4427 2n4427 rca Trimmer ARCO Transistor 2n4427

    2N3866

    Abstract: 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application
    Text: • bb53^31 N AflER 0Q2T7Ö1 b02 * A P X PHILIPS/DISCRETE bTE 2N3866 2N4427 P SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N o verlay transistors in T O -3 9 m etal envelopes w ith the c o lle c to r connected to the case. T he devices are p rim a rily intended fo r class-A, B o r C am plifiers, frequency m u ltip lie r and o sc illa to r circuits.


    OCR Scan     		PDF bb53131 0Q217Ã 2N3866 2N4427 bb53T31 2n4427 philips ferroxcube 4312 020 36690 2N3866 class-a Transistor 2N3866 2N3866 metal Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application

    BLY32

    Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
    Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors


    OCR Scan     		PDF OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier

    t122 25 3

    Abstract: BLW85 t122 25 10 BLW80 BFS22A BFQ42 SOT-120 BFQ43 T122 blw79
    Text: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS RF power transistors VHF 25 - 175 MHz BIPOLAR TRANSISTORS type num ber load power @ 175 MHz W power gain @ 175 MHz (dB) supply voltage (V) package


    OCR Scan     		PDF 2N4427 BFQ42 BFQ43 BLW29 O-39/1 OT120 BLW79 t122 25 3 BLW85 t122 25 10 BLW80 BFS22A SOT-120 T122

    BLY93A

    Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
    Text: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30


    OCR Scan     		PDF 25175M 175MHz 2N4427 BFQ42 BFQ43 BLW29 OT-120, BLY93A blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88

    2N3866

    Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
    Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains


    OCR Scan     		PDF 2N3866 2N4427 2N2708 2N918 BFY90 OT-23 ZTX325 zetex ztx327 Zetex bfy90 Transistor 2N3866 2N2102 BSY55