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    2N2243 TRANSISTOR Search Results

    2N2243 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N2243 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2243 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)150m


    Original     		PDF 2N2243 Freq50M

    2n2243 transistor

    Abstract: No abstract text available
    Text: m 2N2243 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W


    OCR Scan     		PDF 2N2243 2N2243 2n2243 transistor

    102n3500

    Abstract: 2N2440 2N2243 2N2270 2N3019 2N3020 2N3053 2N3300 2N3440 2N3498
    Text: TO-38 Metal-Can Package Transistors NPN! _ _ * Lag Maximum Ratings Type No. 2N2243 VCBO (V Min ^CEO (V) Min 120 80 ^EBO (V) Min Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) Pd (W) Tc=25°c 'c (A) (A) (HA) Max


    OCR Scan     		PDF 2N2243 2N2270 2N3500 2N3501 102n3500 2N2440 2N3019 2N3020 2N3053 2N3300 2N3440 2N3498

    2N2243

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No 2N2243 ^CBO V CEO ^E B O PD !c 'cm 'cB O ^C8 'ces ^C E (V) Min (V) Min (V) Min (W) @Tc=25°c (A) (A) (pA) Max e (v) (pA) Max


    OCR Scan     		PDF 2N2243 2N2270 2N3499 2N3500 2N3501 2N2243

    2N2243

    Abstract: 2N2193A 2N2243A
    Text: TYPES * J M * 2N2243, 2N2243A N -P -N SILICON TRANSISTORS B U L L E T IN NO . D L -S 733571, M A R C H 1 9 6 3 - R E V IS E O M ARC H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S • High Breakdown Voltage Combined with


    OCR Scan     		PDF 2N2243, 2N2243A 2N2192 2N2192A 7S222 2N2243 2N2193A

    2N3055

    Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
    Text: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER


    OCR Scan     		PDF U3158. BUV22 BUV23 BUV26 BUV39 BUV47 BUV50 BUV51 BUV52 BUV61-CECC-QR 2N3055 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79

    2N2310

    Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/151A 2N2352 2N2310 2N2351 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311

    transistor t05

    Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
    Text: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200


    OCR Scan     		PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 N3830 transistor t05 TIS60m 2N1889 2N1890 2N1893

    2n3037

    Abstract: LT 752 2N2243 2N3039 2N3038
    Text: TYPES 2N3037, 2N3038 N-P-N SILICON TRANSISTORS B U L L E T I N NO. D L - S 634251, A U G U S T 1963 F O R G E N E R A L P U R P O S E A M P L IF IE R A N D S W IT C H IN G A P P L IC A T IO N S • High Breakdown Voltage Com bined With Very Low Saturation Voltage


    OCR Scan     		PDF 2N3037, 2N3038 2N2243 2N3039 2N3040 2N3037 LT 752

    2N2270 equivalent

    Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		PDF 2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/15NPN BSY51 2N2270 equivalent 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76

    tt 2194

    Abstract: 2N2193 2N2193A 2N2192 TEXAS INSTRUMENTS 2N2192 NS2N 2n2243
    Text: TYPES 2N2192, 2N2192A. 2N2193. 2N2193A. 2N2194, 2N2194A, N-P-N SILICON TRANSISTORS B U L L E T IN • I NO. D L S 733571, M AR C H 1 9 6 3 -R E V IS E D M A R C H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S


    OCR Scan     		PDF 2N2192, 2N2192A. 2N2193. 2N2193A. 2N2194, 2N2194A, 2N2243 tt 2194 2N2193 2N2193A 2N2192 TEXAS INSTRUMENTS 2N2192 NS2N

    Untitled

    Abstract: No abstract text available
    Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


    OCR Scan     		PDF bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

    n4300

    Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
    Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.


    OCR Scan     		PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419

    2N2440

    Abstract: 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal
    Text: TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO (V) Min V C EO V E BO (V) Min (V) Min ^CBO (MA) Max V CB hFE O (V) tc •& V C E (mA) (V) Min Max V C E (Sal) & V B E (Sal) ® (V) M ax 'c (V) (mA) Min Max 3.000 10.0 0.75 15 10.000 10.0 1.00 360 40


    OCR Scan     		PDF 2N3439 2N3742 BF259 2N3440 BFY52 2N1B40 2N1S44 2N1990 2N2218 OOD020Ã 2N2440 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal

    2H2222A

    Abstract: 2MM72 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B
    Text: jomitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon small signal transistors Maximum Ratings Oevke Type Package Pd Ambient mW 2*497 2N498 2MS6 2m i mat mn mat mm NPN NPN NPN NPN NPN TO TO TO TO TO 5 5 5 5 5 800 BOO BOO 800 600 E le c tfiu r il ChaiacTu fis ti! s


    OCR Scan     		PDF 2N498 2MM72 2N37W 2N372S 2N4072 2H2222A 2N2696 2N2708 2N2312 2n2959 2n708s 2N2195B

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    CDIL BC141-16

    Abstract: BFX40 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840
    Text: -39 : H DIM A B C D E F G H J K PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR L MEN 8,50 7,74 6,09 0,40 - 2,41 4,82 0,71 0,73 12,7 42 DEG . ' MAX 9,39 8,50 6,60 0,53 0,88 2,66 5,33 0,86 1,02 48 DEG ALL DIMENSIONS ARE IN M.M. TO-39 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N656 2N657 BFX40 BFX41 BFX87 CK100 CK150 CDIL BC141-16 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840

    102n3500

    Abstract: 2n2440 2n3502 2N699 bsx62-16 2N1613 2N1644 BFX2 2N1837 2N656
    Text: PIN C O N FIG U R A TIO N 1. EM ITTER 2. BASE 3. COLLECTOR DIM MIN M AX A 8,50 9,39 B 7,74 8,50 C 6,09 6,60 D 0,40 0,53 E - 0,88 F 2,41 2,66 G 4,82 5,33 H 0,71 0,86 J 0,73 1,02 K 12,7 - L 42 DEG 4 8 DEG ALL D IM E N SIO N S A RE IN M.M. TO-39 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N656 2N657 2N696 2N697 2N699 2N1507 BFX38 BFX40 BFX41 BFX87 102n3500 2n2440 2n3502 bsx62-16 2N1613 2N1644 BFX2 2N1837

    "NPN Transistors" 2n3567

    Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
    Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40


    OCR Scan     		PDF 2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


    OCR Scan     		PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    triac LT 5220

    Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
    Text: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)


    OCR Scan     		PDF 041P9C RO-45 O-92/1/2/3 O-92/5 O-106 O-220 triac LT 5220 BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716

    2N3567

    Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
    Text: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA


    OCR Scan     		PDF b501L3a 0370MM T-27-CI T-27-01 2N3567 NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


    OCR Scan     		PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278