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    2N149 Price and Stock

    Microchip Technology Inc 2N1490

    POWER BJT
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    Cinch Connectivity Solutions 500-0012-N14-97

    Circular MIL Spec Connector STRT PLG FML SZ14 12-16 CBL OD 9.7MM
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    Vishay Sprague 2N1499A

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    RCA 2N1490

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    2N149 Datasheets (167)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N149 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N149 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N149 Unknown GE Transistor Specifications Scan PDF
    2N149 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N149 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N149 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N149 Unknown Vintage Transistor Datasheets Scan PDF
    2N1490 Microsemi NPN SILICON HIGH POWER TRANSISTOR Original PDF
    2N1490 New England Semiconductor BJT, NPN, High Power Switching Transistor, IC 6A Original PDF
    2N1490 API Electronics Short form transistor data Short Form PDF
    2N1490 API Electronics Transistor Selection Guide Scan PDF
    2N1490 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N1490 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N1490 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N1490 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1490 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1490 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1490 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1490 Unknown GE Transistor Specifications Scan PDF
    2N1490 Unknown Transistor Replacements Scan PDF
    ...

    2N149 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N1490+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)100 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1490

    Untitled

    Abstract: No abstract text available
    Text: 2N1493 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175# I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1493

    2N1489

    Abstract: 2N1487 2N1488 2n1498
    Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N1487 JAN, JTX, JTXV 2N1488 JAN, JTX, JTXV 2N1489 JAN, JTX, JTXV 2N1490 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/208 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1487


    Original     		PDF 2N1487 2N1488 2N1489 2N1490 MIL-PRF-19500/208 2N1498 2N1490 O-204AA) 2n1498

    2N3236

    Abstract: 2N3864 2N1070 2N1488 2N2305 2N3667 2N3771 2N4347 2N5559
    Text: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559


    Original     		PDF 2N1069 2N1070 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3236 2N3864 2N3667 2N3771 2N4347 2N5559

    2N1487

    Abstract: 2n1498 2N1489 2N1490 2N1488
    Text: TECHNICAL DATA 2N1487 JAN, JTX, JTXV 2N1488 JAN, JTX, JTXV 2N1489 JAN, JTX, JTXV 2N1490 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/208 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N1487 2N1498 2N1488 2N1490 Units VCEO


    Original     		PDF 2N1487 2N1488 2N1489 2N1490 MIL-PRF-19500/208 2N1487 2N1498 2N1488 2N1490 O-204AA) 2n1498

    2N305S

    Abstract: 2N2982 2SC696 2SC481 2N549 BSY87 2N754 2N844 ESM637 2N1564
    Text: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560


    Original     		PDF 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A 2N305S 2N2982 2SC696 2SC481 2N549 BSY87 2N754 2N844 ESM637 2N1564

    LT019

    Abstract: tip410 B0243C LT011S LT019S 182T2C LT011 182T2 TO82 BU312
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron Gentron ~~~~~~~ ~entron EUT019R EUT019RS EUT019S LT011 LT011 A LT011RS LT011S LT012 LT012S LT019 LT019R LT019RS LT019S 2N1490


    Original     		PDF EST011R EST011RS EST011S EST012 EST012R EST012RS EST012S EST019 EST019R EST019RS LT019 tip410 B0243C LT011S LT019S 182T2C LT011 182T2 TO82 BU312

    2N2222B

    Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
    Text: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560


    Original     		PDF 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A 2N2222B 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco

    2N1069

    Abstract: 2N3233 2N3236 2N3226 2N3442 2N1070 2N3232 2N3863 2n4395
    Text: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559


    Original     		PDF 2N1069 2N1070 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3236 2N3442 2N3863 2n4395

    Untitled

    Abstract: No abstract text available
    Text: 2N1491 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30º V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175# I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1491

    Untitled

    Abstract: No abstract text available
    Text: 2N1496 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


    Original     		PDF 2N1496 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: 2N1494 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


    Original     		PDF 2N1494 Freq220M

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    O7703

    Abstract: ic sj 2036 2N1489 2N1490 oc142 2N148B b961 2N1487 2N1488 Transistor 1967
    Text: M IL -S -19500/208B Ü4 A ugust 1967 SUPERSEDING M IL -S - 19500/208A EL 23 O cto b e r 1964 (See 6. 2) M ILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, H IGH-POW ER TY PES 2N1487, 2N1488, 2N1489, AND 2N1490 T h is s p e c ific a tio n is m an d ato ry fo r u se by a ll D e p a rt­


    OCR Scan     		PDF MIL-S-19500/208B 19500/208A 2N1487, 2N1488, 2N1489, 2N1490 2N1487 2N1489 2N1488 O7703 ic sj 2036 2N1490 oc142 2N148B b961 Transistor 1967

    393A

    Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
    Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868

    Untitled

    Abstract: No abstract text available
    Text: NEU ENGLAND SEMICONDUCTOR SIE I • b S b m i B 000005S 370 * N E S 2-50 A V ceo sus = 3 5 -5 0 0 V fr =0 .2 -5 0 MHz NPN TO-3 lc (M A X ) — Case 803 Case 804 Type No. 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447 2N3448 2N3713 2N3714 2N3715


    OCR Scan     		PDF 000005S 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447

    2N1491

    Abstract: 2N1492 2N1493 2N1491-2N1493
    Text: File No. 10 RF P o w e r T r a n s is to r s 2N1491 Solid State Division 9N14.Q9 2N1493 RCA-2N1491, 2N1492, and 2N1493 are triple-diffused transistors of the silicon n-p-n type. These transistors are intended for a wide variety of appli­ cations in industrial and military electronic equipment. They are particu­


    OCR Scan     		PDF 2N1491 2N1492 2N1493 RCA-2N1491, 2N1492, 2N1493 2N1491 2N1492 92CS-I22B9RI 2N1491-2N1493

    Untitled

    Abstract: No abstract text available
    Text: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069


    OCR Scan     		PDF 2N5468 2N5469 2N2811 2N2812 2N2813 2N6495 2N4231 2N4232A 2N4233 2N4233A

    2N1499A

    Abstract: transistor SE 431 i071
    Text: M l L-S-19500/170A EL 8 M av 1969 SU PER SED IN G Ml L-S-19500/170(SigC) 15 February 1961 S EM IC O N D U C T O R DEVICE,- TRANSISTO R. TYPE 2N1499A 1. PN P. G E R M A N IU M SCO PE 1.1 Scope.- This specification covers the détail requirements for gemcr.!*jinf P N P ;


    OCR Scan     		PDF L-S-19500/170A L-S-19500/170 2N1499A 5961-A244 2N1499A transistor SE 431 i071

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135


    OCR Scan     		PDF 0000SS7 AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487