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    2N1485 TO8 PACKAGE Search Results

    2N1485 TO8 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    2N1485 TO8 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N1485

    Abstract: 2N1486 2N1484 2N1483 2n1485 TO8 package
    Text: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1483 Qualified Level 2N1484 2N1485 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation


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    MIL-PRF-19500/207 2N1483 2N1484 2N1485 2N1486 2N1485 2N1486 2N1484 2N1483 2n1485 TO8 package PDF

    2n1485

    Abstract: 2n1485 TO8 package
    Text: TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/ 207 Devices 2N1483 Qualified Level 2N1484 2N1485 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation


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    MIL-PRF-19500/ 2N1483 2N1484 2N1485 2N1486 2n1485 2n1485 TO8 package PDF

    2N1485

    Abstract: No abstract text available
    Text: 2N1485 NPN Transistor 19.98 Transistors Bipolar Silicon NPN Power Transistors Ameri. Page 1 of 1 Enter Your Part # Home Part Number: 2N1485 Online Store 2N1485 Diodes NPN Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    2N1485 2N1485 com/2n1485 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N1483 2N1486 Qualified Levels: JAN and JANTX NPN Silicon Medium Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/180 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


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    2N1483 2N1486 MIL-PRF-19500/180 2N1483 2N1486 MIL-PRF-19500/180. T4-LDS-0299, PDF

    2sc630

    Abstract: KT817B IDB434 2SD130 2SB1003 2N3167 MOTOROLA 2sd1369 bd57 2SC790R 2N319
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T (V) (W) Min (Hz) r •CBO Max Max (A) (8) (CE)ut Max (Ohms) Top«r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


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    KT817A 2SD91 IDB1023 IDD1413 2SB1003 2SD1369 BDY34 2N3632 See00n 2sc630 KT817B IDB434 2SD130 2N3167 MOTOROLA bd57 2SC790R 2N319 PDF

    B0933

    Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL


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    Mall02 5000n B0933 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 2S0234Y PDF

    Untitled

    Abstract: No abstract text available
    Text: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)


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    2N1482) O-39/TO-205M O-5/TO-205MA 2N1479* 2N1481* 2N1700 2N1480* 2N1482* 01METERS 92CS-20225 PDF

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


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    2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    TO82 TRANSISTOR

    Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C


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    e6DjP073L. 254D22 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1016 2N1016A TO82 TRANSISTOR npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227 PDF

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


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    25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227 PDF

    Jantxv2N5666S

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number 2N1485 2N1486 2N4910 2N4911 2N4912 2N5606 2N5610 2N6352 2N5612 2N6353 2N3018 2N4300 2N5662 JAN2N5662 JANTX2N5662 JANTXV2N5662 , 2N5663 JAN2N5663 JANTX2N5663 JANTXV2N5663 2N5666 2N5666S JAN2N5666 JAN2N5666S JANS2NS666 JANS2NS666S


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    T0-220 O-22Q NPN-11 Jantxv2N5666S PDF

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


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    T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352 PDF

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


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    88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package PDF

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


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    AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U PDF