2N1016D Search Results

2N1016D Price and Stock

Filter by Manufacturer


Microchip Technology Inc 2N1016D TRANS NPN 200V 7.5A TO-82
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N1016D	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	2N1016D	Tray			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc JAN2N1016D Trans GP BJT NPN 200V 7.5A 2-Pin TO-82 - Trays (Alt: JAN2N1016D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JAN2N1016D	Tray			50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
NexGen Digital	JAN2N1016D		111			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N1016D Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
2N1016D	Microsemi	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN TRANSISTOR	Original	PDF
2N1016D	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N1016D	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N1016D	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N1016D	Unknown	GE Transistor Specifications	Scan	PDF
2N1016D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N1016D	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N1016D	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N1016D	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N1016D	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N1016D	Pirgo Electronics	Power Transistors in TO-82	Scan	PDF
2N1016D	Semitronics	Silicon Power Transistors	Scan	PDF
2N1016D	Silicon Transistor	Industrial Grade NPN Power Transistors	Scan	PDF
2N1016D	Silicon Transistor	JAN Qualified Power Transistors	Scan	PDF

2N1016D	Silicon Transistor	JAN / Consumer / Military / Industrial / Automotive / Hi-Rel	Scan	PDF
2N1016D	Solid Power	POWER TRANSISTORS - TO-82	Scan	PDF
2N1016D	Westinghouse	Silicon Power Transistors 20 Amps, 150 Watts	Scan	PDF
2N1016D	Westinghouse	7.5 Amps, 150 Watt Silicon Power Transistor	Scan	PDF
2N1016D+JAN	Defense Energy Support Center	NPN Silicon High Power Transistors	Scan	PDF

2N1016D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.	Original	2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 high-reliabilit32	PDF
2n1016 Abstract: 2n1016c Text: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.	Original	2N1016B, 2N1016C, 2N1016D MIL-PRF-19500/102 2N1016 2n1016c	PDF
2n1016 Abstract: No abstract text available Text: , Line. <~>E.ml-L-ona.u.cko'i u-^i 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN POWER TRANSISTROS 2N1015/2N1016 Inches . Mm. iymbo A 08 d 0D 0D, <t>0, e e, H Min. Max. .560 .060 .170 12.70	Original	2N1015/2N1016 2n1016	PDF
2N2227 Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229 Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home \| help \| email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32	Original	2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229	PDF
delco Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077 Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans	Original	2N1012 2N1013 2N1014 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F delco 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077	PDF
transistor kc 2026 Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019 Text: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,	OCR Scan	MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B -I-150 2N1016C 2N1016D MIL-S-19500/102A transistor kc 2026 2N10160 2n1019	PDF
2N1016B Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026 Text: MIL SP E C S IC\|ODDOiaS OODObTl 4 \|~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart	OCR Scan	MIL-S-19500/102A MIL-S-19500/102 2N1016B, 2N1016C, 2N1016D 2N1016B 2N1016C 2N1016D MIL-S-19500, transistor kc 2026 102A MC 3041 2N1016 kc 2026	PDF
393A Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868 Text: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440	OCR Scan	2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 393A 2N3768 2N1716 207C 2N1722 180D 2N3868	PDF
2N1015 Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B Text: POWER TRANSISTORS • PT TYPE NO. TO-82 m MAXIMUM RATINGS 25C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5	OCR Scan	2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B	PDF
2N1016 Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430 Text: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,	OCR Scan	DDGD43T 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 152-TO-82 2N1016 2N2772 2N2771 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430	PDF
2N1384 Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046 Text: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP	OCR Scan	2N974 2N1031A 2N1117 2N975 2N1032 2N1118 2N976 2N1034 2N1119 2N980 2N1384 2N993 2N1516 2N1151 2N1378 2N1036 2N1150 2N1037 2N1046	PDF
2n1016 Abstract: 2n2739 Text: POW ER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS le B V cbo B V ceo B V ebo V A V V Watts < 25°C hFE MIN MAX ì> V CE le V A Test Sat Voltages Conditions Ib le V CE V be A A V V Iebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5	OCR Scan	2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2n2739	PDF
2N1016 Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760 Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc \| M A X ) Il FE IC/VCE VcEO(SUS\| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE\|S*T\| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8	OCR Scan	STA9760 STAB760 STA9761 STA3265 STA3285 STA3266 STA8860 2N1016 2N1015C 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E	PDF
2n189 Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152 Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits	OCR Scan	2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152	PDF

2N1015 Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753 Text: 8365700 SOLID POWER CORP SOLID 95C 0 0 1 2 0 POWER CORP TS D ö3hS70G -p-3 3 ^0/ 000D12D POW ER TRANSISTORS PT TYPE NO. W atts TO-82 hFE M A X IM U M R A TIN G S @ Ic 25°C B V cbo B V ceo B V ebo V V , V A @ M IN M AX Ic A V CE V Sat Voltages VCE V be V V	OCR Scan	T-33-0/ 03hS70G 000D1ED 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753	PDF
Transistors 2n551 Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts	OCR Scan	2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF
2N3920 Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307 Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)	OCR Scan	2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
TO82 TRANSISTOR Abstract: TO82 2N2227 Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE \| ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C	OCR Scan	25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF

Privacy Settings

2N1016D Search Results

2N1016D Price and Stock

Microchip Technology Inc 2N1016D

Microchip Technology Inc JAN2N1016D

2N1016D Datasheets (19)

2N1016D Datasheets Context Search

Untitled

2n1016

2n1016

2N2227

delco

transistor kc 2026

2N1016B

393A

2N1015

2N1016

2N1384

2n1016

2N1016

2n189

2N1015

Transistors 2n551

RCA H 541

MC2259

RCA SK CROSS-REFERENCE

2N3920

transistor c2060

y51 h 120c

TO82 TRANSISTOR

2N2222A 338