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    2MBIT SRAM Search Results

    2MBIT SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy

    2MBIT SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FM28V202

    Abstract: FM28V202TG TSOP-II 44 Recommended PCB Footprint
    Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		FM28V202 128Kx16 256Kx8 33MHz -40ess FM28V202 FM28V202TG TSOP-II 44 Recommended PCB Footprint PDF

    FM21L16

    Abstract: FM18L08 FM20L08 FM21L16-60-TG
    Text: Preliminary FM21L16 2Mbit FRAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21L16 128Kx16 256Kx8 40MHz 128Kx16 FM21L16 FM21L16, FM21L16-60-TG FM18L08 FM20L08 FM21L16-60-TG PDF

    Untitled

    Abstract: No abstract text available
    Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 FM21LD16 FM21LD16, C8556953BG1, FM21LD16-60-BG PDF

    FM21L16

    Abstract: FM18L08 FM20L08 FM21L16-60-TG
    Text: Preliminary FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21L16 128Kx16 256Kx8 40MHz 128Kx16 FM21L16 FM21L16, FM21L16-60-TG FM18L08 FM20L08 FM21L16-60-TG PDF

    MSL3 RoHS FBGA

    Abstract: fm23mld16 FM21LD16-60-BG FM22LD16
    Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 40MHz 128Kx16 FM21LD16 48-ball MSL3 RoHS FBGA fm23mld16 FM21LD16-60-BG FM22LD16 PDF

    FM21L16

    Abstract: FM21L16-60-TG FM18L08 FM20L08 TSOP-II 44 Recommended PCB Footprint
    Text: Preliminary FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21L16 128Kx16 256Kx8 40MHz 128Kx16 FM21L16 FM21L16, FM21L16-60-TG FM21L16-60-TG FM18L08 FM20L08 TSOP-II 44 Recommended PCB Footprint PDF

    FM21L16-60-TG

    Abstract: FM21L16-60-TGTR FM18L08 FM20L08 FM21L16 JESD22-A114-F
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21L16 128Kx16 256Kx8 33MHz 128Kx16 FM21L16 FM21L16-60-TG FM21L16-60-TGTR FM18L08 FM20L08 JESD22-A114-F PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM28V202 2Mbit 128Kx16 F-RAM Memory FEATURES 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM28V202 128Kx16 256Kx8 33MHz 128Kx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 48-ball FM21LD16, C8556953BG1, FM21LD16-60-BG C8556953BG1 PDF

    MSL3 RoHS FBGA

    Abstract: fm23mld16 failure rate
    Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 MSL3 RoHS FBGA fm23mld16 failure rate PDF

    FM21L16

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process


    Original     		FM21L16 128Kx16 256Kx8 33MHz FM21L16 PDF

    ADDS-2189M-EZLITE

    Abstract: ADDS-218X-ICE-2.5V ADSP-21535 ADSP-2185N MIP 320 VDSP-21XX-PC-FULL ADSP-2188N ADSP-2187N ADSP-2188M ADSP-2189M
    Text: 16-Bit DSP Key Products Recommended for New Designs Code-Compatible 219X Series 150 Code-Compatible and Pin Compatible 218X N Series 75 218X M Series 50 218X L Series 80 MIPS Up to 2MBit SRAM 0.3 mA/MIP @1.8V 75 MIPS Up to 2MBit SRAM 0.5 mA/MIP @2.5V 33-52 MIPS


    Original     		16-Bit 16-Bit ADSP-21535 ADSP-2192 ADSP-2191 ADSP-2188M ADSP-2188N ADSP-2189M ADSP-21160M/N ADSP-21161N ADDS-2189M-EZLITE ADDS-218X-ICE-2.5V ADSP-21535 ADSP-2185N MIP 320 VDSP-21XX-PC-FULL ADSP-2188N ADSP-2187N ADSP-2188M ADSP-2189M PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		FM21L16 128Kx16 256Kx8 33MHz 128Kx16 FM21L16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16  Configurable as 256Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 FM21LD16, C8556953BG1, FM21LD16-60-BG C8556953BG1 FM21LD16 PDF

    HY62SF16201A

    Abstract: HY62SF16201A-I HY62UF16201A HY62UF16201A-I
    Text: HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201A / HY62QF16201A / HY62EF16201A / HY62SF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The


    Original     		HY62UF16201A/ HY62QF16201A/ HY62EF16201A/ HY62SF16201A 128Kx16bit HY62UF16201A HY62QF16201A HY62EF16201A 16bits. HY62SF16201A-I HY62UF16201A-I PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62SF16200A uses high performance full CMOS process technology and is designed for high speed and


    Original     		HY62SF16200A 128Kx16bit 16bits. 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and


    Original     		HY62QF16201A 128Kx16bit 16bits. 48-FBGA 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16200A uses high performance full CMOS process technology and is designed for high speed and


    Original     		HY62UF16200A 128Kx16bit 16bits. 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62UF16201A uses high performance full CMOS process technology and is designed for high speed and


    Original     		HY62UF16201A 128Kx16bit 16bits. 48-FBGA HY62UF16201ACKAGE 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16200A Series 128Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16200A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16200A uses high performance full CMOS process technology and is designed for high speed and


    Original     		HY62QF16200A 128Kx16bit 16bits. 48-FBGA 48ball 5M-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: WHITE /MICROELECTRONICS WPSF128K16G-27PJX 2Mbit of SRAM & 2Mbit of FLASH 128Kx16 SRAM/128Kx16 FLASH MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • A cce ss Tim es o f 20ns SRAM ■ ■ A cce ss Tim es o f 70ns (Flash) 100,000 Erase/Program Cycles ■


    OCR Scan     		128Kx16 SRAM/128Kx16 WPSF128K16G-27PJX 16KBytes PDF

    SD4148

    Abstract: No abstract text available
    Text: WPSF128K16G-27PJX WHITE /MICROELECTRONICS a 2Mbit of SRAM & 2Mbit of FLASH 128Kx16 SRAM/128Kx16 FLASH MODULE AD VAN CED * FEATURES FLASH MEMORY FEATURES • A cce ss Tim es of 20ns SRAM ■ ■ A cce ss Tim es of 70ns (Flash) • 68 Lead, Plastic PLCC, 24.71 mm (0.973 inch) square


    OCR Scan     		WPSF128K16G-27PJX 128Kx16 SRAM/128Kx16 16KBytes SD4148 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYM1830 PVPDI7QC SEMICONDUCTOR 64K x 32 Static RAM Module Features Functional Description • High-density 2 M egabit SRAM Module T he CYM1830 is a high perform ance 2Mbit Static RA M module organized as 64K words by 32 bits. This module is con­


    OCR Scan     		CYM1830 CYM1830 M1830HD-35C M1830LHD-35C M1830HD-35MB M1830LHD-35MB M1830HD-30C M1830LHD-30C M1830HD-45C M1830LHD-45C PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16201A Series 128K X 16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16201A is a high speed, super low power and 2Mbit full CMOS SRAM organized as 131,072 words by 16bits. The HY62QF16201A uses high performance full CMOS process technology and is designed for high speed and


    OCR Scan     		HY62QF16201A 16bit 16bits. 48-FBGA HYQF621AC PDF