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    FM18L08 Price and Stock

    Ramtron International Corporation FM18L08-70-S

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    Bristol Electronics FM18L08-70-S 10 1
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    Quest Components FM18L08-70-S 8
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    FM18L08-70-S 32
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    Ramtron International Corporation FM18L08-70-STR

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    Quest Components FM18L08-70-STR 39
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    Ramtron International Corporation FM18L0870S

    FRAM, 32KX8, Parallel, PDSO28
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    ComSIT USA FM18L0870S 3
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    FM18L08 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FM18L08 Unknown Original PDF
    FM18L08 Ramtron International 256Kb Bytewide 3V F-RAM Memory Original PDF
    FM18L08 Ramtron International 256Kb 2.7-3.6V Bytewide FRAM Memory Original PDF
    FM18L08-70-P Ramtron International 256Kb 3V Bytewide FRAM Memory Original PDF
    FM18L08-70-P Ramtron International 256Kb Bytewide FRAM Memory Original PDF
    FM18L08-70-P Ramtron International 256Kb Bytewide 3V FRAM Memory Original PDF
    FM18L08-70-P Ramtron International 256Kb, 2.7-3.6V bytewide FRAM memory. 70 ns access Original PDF
    FM18L08-70-S Ramtron International 256Kb 3V Bytewide FRAM Memory Original PDF
    FM18L08-70-S Ramtron International 256Kb Bytewide FRAM Memory Original PDF
    FM18L08-70-S Ramtron International 256Kb Bytewide 3V FRAM Memory Original PDF
    FM18L08-70-S Ramtron International 256Kb, 2.7-3.6V bytewide FRAM memory. 70 ns access Original PDF
    FM18L08-70-S70 Ramtron International NVRAM, 256Kb Bytewide FRAM Memory Original PDF
    FM18L08-70-TG Ramtron International 256Kb Bytewide FRAM Memory Original PDF

    FM18L08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM


    Original     		PDF FM18L08 256Kb FM18L08 256-kilobit

    28v020

    Abstract: FM28V020 AN108 FM18L08
    Text: AN108 Differences in FM18L08 and FM28V020 Applies to 256Kb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM18L08 and FM28V020 parallel F-RAM devices. For most designs, the FM28V020 device can be considered equivalent or better than the FM18L08. The two


    Original     		PDF AN108 FM18L08 FM28V020 256Kb FM28V020 FM18L08. 28v020 AN108

    FM18L08-70-SG

    Abstract: FM18L08 FM18L08-70-P FM18L08-70-S FM18L08-70-TG FM18L08-70 FM18L08-70-PG
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible


    Original     		PDF FM18L08 256Kb 32Kx8 FM28V020 FM18L08-70-SG FM18L08 FM18L08-70-P FM18L08-70-S FM18L08-70-TG FM18L08-70 FM18L08-70-PG

    FM18L08-70-S

    Abstract: 1E16 FM18L08 FM18L08-70-P MS-013
    Text: Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM18L08 256Kb 32Kx8 28-pin 600-mil MS-011 FM18L08-70-S 1E16 FM18L08 FM18L08-70-P MS-013

    FM18L08-70-S

    Abstract: 32kx8 sram FM18L08 FM18L08-70-P MS-011 MS-013
    Text: Product Preview FM18L08 256Kb 3V Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18L08 256Kb 32Kx8 FM18L08-70-S 32kx8 sram FM18L08 FM18L08-70-P MS-011 MS-013

    Untitled

    Abstract: No abstract text available
    Text: Product Preview FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18L08 256Kb FM18L08 256-kilobit

    AN103

    Abstract: AN-103 FM18L08 FM20L08 TSOP32 TSOPI
    Text: AN-103 32-pin TSOP Pinouts Applies to FM18L08 and FM20L08 Devices DESCRIPTION The FM18L08 32Kx8 and FM20L08 (128Kx8) devices are offered in the 32-pin TSOP-I package. The package body size is a 8.0 x 13.4 mm and the pin pitch is 0.5 mm. The two devices are not pin compatible


    Original     		PDF AN-103 32-pin FM18L08 FM20L08 FM18L08 32Kx8) FM20L08 128Kx8) 28-pin AN103 AN-103 TSOP32 TSOPI

    fram

    Abstract: FM1808 FM1608 FM18L08
    Text: Application Note Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used


    Original     		PDF FM1608 FM1808 FM18L08 32Kx8 545-FRAM, fram

    FM18L08-70-SG

    Abstract: fm18L08-70sg tsop package MSL FM18L08-70-S FM18L08 FM18L08-70-P FM18L08-70-TG FM18L0870SG FM18L08-70
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 45 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM


    Original     		PDF FM18L08 256Kb FM18L08 256-kilobit FM18L08-70-SG fm18L08-70sg tsop package MSL FM18L08-70-S FM18L08-70-P FM18L08-70-TG FM18L0870SG FM18L08-70

    Untitled

    Abstract: No abstract text available
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM


    Original     		PDF FM18L08 256Kb FM18L08 256-kilobit

    FM18L08-70-S

    Abstract: TCA 700 FM18L08 FM18L08-70-P FM18L08-70-SG
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process SRAM & EEPROM Compatible


    Original     		PDF FM18L08 256Kb 32Kx8 FM18L08-70-S TCA 700 FM18L08 FM18L08-70-P FM18L08-70-SG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18L08 256Kb FM18L08 256-kilobit

    FM18L08

    Abstract: FM18L08-70-P FM18L08-70-S MS-011 MS-013 BBSRAM
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM


    Original     		PDF FM18L08 256Kb FM18L08 256-kilobit FM18L08-70-P FM18L08-70-S MS-011 MS-013 BBSRAM

    FM18L08-70-S

    Abstract: ttl cmos advantages disadvantages FM18L08 FM18L08-70-P MS-011 MS-013 FM18L08-70
    Text: Product Preview FM18L08 256Kb Bytewide 3V FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM18L08 256Kb 32Kx8 FM18L08-70-S ttl cmos advantages disadvantages FM18L08 FM18L08-70-P MS-011 MS-013 FM18L08-70

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    FM18L08

    Abstract: FM20L08 FM20L08-60-TG
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8

    FM22L16-55-TG

    Abstract: FM20L08 FM22L16 256KX16
    Text: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM22L16 256Kx16 512Kx8 40MHz 256Kx16 FM22L16 FM22L16, FM22L16-55-TG FM22L16-55-TG FM20L08

    FM28V020-SG

    Abstract: FM28V020-SGTR FM28V020 FM18L08
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit 32Kx8 40MHz FM28V020 28-pin MS-013D FM28V020, FM28V020-SG FM28V020-SG FM28V020-SGTR FM18L08

    FM18L08

    Abstract: FM20L08 FM20L08-60-TG
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    Untitled

    Abstract: No abstract text available
    Text: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM22L16 256Kx16 512Kx8 40MHz 256Kx16 FM22L16 rel10