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    2SK310 Search Results

    2SK310 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3108-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3105(0)-T1B-A Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK3107C(0)-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3107-T1-A Renesas Electronics Corporation Switching N-Channel Power Mosfet, USM, /Embossed Tape Visit Renesas Electronics Corporation
    2SK3109-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25, /Bag Visit Renesas Electronics Corporation
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    2SK310 Price and Stock

    Renesas Electronics Corporation 2SK3107-T1-AT

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    Avnet Americas 2SK3107-T1-AT Reel 4 Weeks 1,396
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    Rochester Electronics 2SK3107-T1-AT 16,455 1
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    Renesas Electronics Corporation 2SK3109-Z-E1-AZ

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    Rochester Electronics 2SK3109-Z-E1-AZ 12,400 1
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    Renesas Electronics Corporation 2SK3107-T1-A

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    Rochester Electronics 2SK3107-T1-A 7,458 1
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    Chip1Stop 2SK3107-T1-A 2,650
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    Renesas Electronics Corporation 2SK3109-AZ

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    Avnet Americas 2SK3109-AZ Bulk 4 Weeks 103
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    Rochester Electronics 2SK3109-AZ 4,900 1
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    Renesas Electronics Corporation 2SK3105-T1B-A

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    Rochester Electronics 2SK3105-T1B-A 3,000 1
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    Chip1Stop 2SK3105-T1B-A 1,600
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    Find more 2SK310 price and stock on Findchips.com

    2SK310 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK310 Hitachi Semiconductor SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) Scan PDF
    2SK310 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK310 Unknown FET Data Book Scan PDF
    2SK310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK3100 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK3101 Sanyo Semiconductor General-Purpose Switching Device Applications Original PDF
    2SK3101 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF
    2SK3101LS Sanyo Semiconductor High Output MOSFETs Original PDF
    2SK3102-01R Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK3102-01R Unknown Power MOSFET, 600V 10A, MOS-FET N-Channel enhanced Scan PDF
    2SK3105 NEC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Original PDF
    2SK3105 NEC N-Channel MOS Field Effect Transistor for Switching Original PDF
    2SK3105-T1B NEC Nch enhancement type MOS FET Original PDF
    2SK3105-T2B NEC Nch enhancement type MOS FET Original PDF
    2SK3107 NEC N-Channel MOS Field Effect Transistor for High Speed Switching Original PDF
    2SK3107-T1 NEC Nch enhancement type MOS FET Original PDF
    2SK3107-T2 NEC Nch enhancement type MOS FET Original PDF
    2SK3108 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK3108 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF

    2SK310 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2


    Original     		PDF 2SK3109 O-263

    2SK3109

    Abstract: 2SK3109-S 2SK3109-Z MP-25 MP-25Z 55PF
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3109 N チャネル パワーMOS FET スイッチング用 2SK3109 は N チャネル縦型 MOS FET で，オン抵抗が低くスイッチング特性が優れており，DC/DC コンバータなどの高


    Original     		PDF 2SK3109 O-262 MP-25 2SK3109-Z O-220AB MP-25) 2SK3109-S O-220SMD 2SK3109 2SK3109-S 2SK3109-Z MP-25Z 55PF

    D1380

    Abstract: 2SK3107 SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 0.1 +0.1 –0.05 0.3 ± 0.05 2.5-V power source.


    Original     		PDF 2SK3107 2SK3107 SC-75 D1380

    2SK3109

    Abstract: 2SK3109-S 2SK3109-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE 2SK3109 TO-220AB MP-25 switching characteristics, and designed for high voltage 2SK3109-S TO-262 (MP-25 Fin Cut) applications such as DC/DC converter.


    Original     		PDF 2SK3109 O-220AB MP-25) 2SK3109-S O-262 MP-25 2SK3109-ZJ O-263 MP-25ZJ) 2SK3109 2SK3109-S 2SK3109-ZJ

    Mosfet 100V 50A

    Abstract: 2SK3109
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available


    Original     		PDF 2SK3109 O-263 Mosfet 100V 50A 2SK3109

    2SK3102-01R

    Abstract: 2sk3102 2SK3102-01R equivalent
    Text: 2SK3102-01R FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3PF Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3102-01R 2SK3102-01R 2sk3102 2SK3102-01R equivalent

    nec 2702

    Abstract: nec 2501 2SK3108
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    Original     		PDF 2SK3108 2SK3108 O-220 O-220 nec 2702 nec 2501

    2SK3105

    Abstract: marking xa
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance


    Original     		PDF 2SK3105 2SK3105 marking xa

    2SK3102-01R

    Abstract: 2sk3102 2SK3102-01R equivalent 2sk310201 N-Channel Silicon Power FUJI MOSFET
    Text: 2SK3102-01R FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3PF Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3102-01R 2SK3102-01R 2sk3102 2SK3102-01R equivalent 2sk310201 N-Channel Silicon Power FUJI MOSFET

    2SK3109-ZJ

    Abstract: MP-25 2SK3109 2SK3109-S
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent


    Original     		PDF 2SK3109 2SK3109 O-220AB 2SK3109-S O-262 2SK3109-ZJ O-263 2SK3109-ZJ MP-25 2SK3109-S

    2SK3109

    Abstract: 2SK3109-S 2SK3109-ZJ MP-25 D13332EJ2V0DS00
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent


    Original     		PDF 2SK3109 2SK3109 O-220AB 2SK3109-S O-262 2SK3109-ZJ O-263 2SK3109-S 2SK3109-ZJ MP-25 D13332EJ2V0DS00

    2SK3108

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC


    Original     		PDF 2SK3108 2SK3108 O-220 O-220

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    2SK3109

    Abstract: 2SK3109-S 2SK3109-ZJ MP-25 1302 diode
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    Original     		PDF 2SK3109 2SK3109 O-262 2SK3109-ZJ O-220AB 2SK3109-S O-263 2SK3109-S 2SK3109-ZJ MP-25 1302 diode

    2SK3101LS

    Abstract: K3101
    Text: 2SK3101LS Ordering number : ENN7910 N-Channel Silicon MOSFET 2SK3101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications


    Original     		PDF 2SK3101LS ENN7910 PW10s, 2SK3101LS K3101

    2SK3107

    Abstract: SC-75
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3107 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original     		PDF 2SK3107 2SK3107 SC-75 SC-75

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for


    OCR Scan     		PDF 2SK3107 2SK3107 SC-75 13802E

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent


    OCR Scan     		PDF 2SK3105 2SK3105 D13293EJ1V0DS00

    2sk3102

    Abstract: 2SK3102-01R 103 H04 10S3 2sk3102-01
    Text: H04-004-07 1.Scope This specifies Fuji Power MOSFET 2SK3102-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.0utview TO-3PF Outview See to 5/|2 page ", 5.Absolute Maximum Ratings at Tc=25°C unless otherwise specified


    OCR Scan     		PDF 2SK3102-01R MS5F4207 H04-004-07 2SK3102-01R H04-004-03 F4207 H04-004-03 2sk3102 103 H04 10S3 2sk3102-01

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    diode t25 4 HO

    Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
    Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.


    OCR Scan     		PDF 441bEG5 2SK310 diode t25 4 HO diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: b lE D 441b2G 5 2SJ117 D D IE ^ IM flbl « H I T H H IT A C H I/tO P T O E L E C T R O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. •


    OCR Scan     		PDF 441b2G 2SJ117 2SK310 TEMPERATURE17 44Tb2DS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,


    OCR Scan     		PDF 2SK3109 2SK3109 O-220AB 2SK3109-S O-262 2SK3109-ZJ O-263