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    2SK301 Price and Stock

    MOSLEADER 2SK3018-ML

    N-ch MOS 30V 0.1A SOT-23
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    DigiKey 2SK3018-ML Reel 300,000 200
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    • 1000 $0.03416
    • 10000 $0.03122
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    Micro Commercial Components 2SK3018-TP

    MOSFET N-CH 30V 100MA SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3018-TP Reel 42,000 3,000
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    2SK3018-TP Cut Tape 1,799 1
    • 1 $0.41
    • 10 $0.289
    • 100 $0.1458
    • 1000 $0.08827
    • 10000 $0.08827
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    2SK3018-TP Digi-Reel 1
    • 1 $0.41
    • 10 $0.289
    • 100 $0.1458
    • 1000 $0.08827
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    Mouser Electronics 2SK3018-TP 5,106
    • 1 $0.41
    • 10 $0.289
    • 100 $0.119
    • 1000 $0.089
    • 10000 $0.061
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    TME 2SK3018-TP 5,110 5
    • 1 -
    • 10 $0.16
    • 100 $0.081
    • 1000 $0.072
    • 10000 $0.068
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    ROHM Semiconductor 2SK3019TL

    MOSFET N-CH 30V 100MA EMT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3019TL Reel 21,000 3,000
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    • 10000 $0.05819
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    2SK3019TL Cut Tape 6,958 1
    • 1 $0.33
    • 10 $0.199
    • 100 $0.1248
    • 1000 $0.08184
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    2SK3019TL Digi-Reel 1
    • 1 $0.33
    • 10 $0.199
    • 100 $0.1248
    • 1000 $0.08184
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    Verical 2SK3019TL 1,376 228
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    Newark 2SK3019TL Cut Tape 2,577 5
    • 1 $0.384
    • 10 $0.271
    • 100 $0.141
    • 1000 $0.089
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    Bristol Electronics 2SK3019TL 53,709
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    2SK3019TL 42,522 12
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    • 100 $0.225
    • 1000 $0.135
    • 10000 $0.0608
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    Quest Components 2SK3019TL 10,686
    • 1 $0.385
    • 10 $0.385
    • 100 $0.385
    • 1000 $0.385
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    2SK3019TL 5,683
    • 1 $0.5
    • 10 $0.5
    • 100 $0.5
    • 1000 $0.15
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    2SK3019TL 736
    • 1 $0.6
    • 10 $0.6
    • 100 $0.18
    • 1000 $0.12
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    2SK3019TL 197
    • 1 $0.154
    • 10 $0.154
    • 100 $0.0963
    • 1000 $0.0963
    • 10000 $0.0963
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    2SK3019TL 38
    • 1 $0.315
    • 10 $0.315
    • 100 $0.1575
    • 1000 $0.1575
    • 10000 $0.1575
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    Ameya Holding Limited 2SK3019TL 2,485 1
    • 1 $0.3626
    • 10 $0.24304
    • 100 $0.10094
    • 1000 $0.07056
    • 10000 $0.05586
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    ComSIT USA 2SK3019TL 18,000
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    Velocity Electronics 2SK3019TL 9,000
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    Chip 1 Exchange 2SK3019TL 5,998
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    Avnet Asia 2SK3019TL 24 Weeks 3,000
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    Avnet Silica 2SK3019TL 11 Weeks 3,000
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    Chip1Stop 2SK3019TL Cut Tape 1,376
    • 1 -
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    • 100 $0.119
    • 1000 $0.0682
    • 10000 $0.0682
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    Component Electronics, Inc 2SK3019TL 2,231
    • 1 $0.38
    • 10 $0.38
    • 100 $0.29
    • 1000 $0.25
    • 10000 $0.25
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    Micro Commercial Components 2SK3019-TP

    MOSFET N-CH 30V 100MA SOT523
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3019-TP Reel 6,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.04292
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    2SK3019-TP Cut Tape 1,279 1
    • 1 $0.33
    • 10 $0.228
    • 100 $0.1111
    • 1000 $0.06439
    • 10000 $0.06439
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    2SK3019-TP Digi-Reel 1
    • 1 $0.33
    • 10 $0.228
    • 100 $0.1111
    • 1000 $0.06439
    • 10000 $0.06439
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    Mouser Electronics 2SK3019-TP 12,300
    • 1 $0.33
    • 10 $0.228
    • 100 $0.093
    • 1000 $0.065
    • 10000 $0.046
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    Verical 2SK3019-TP 1,944,000 12,000
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    2SK3019-TP 24,000 3,000
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    2SK3019-TP 3,000 3,000
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    • 10000 $0.0674
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    Arrow Electronics 2SK3019-TP 24,000 10 Weeks 3,000
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    2SK3019-TP 3,000 12 Weeks 3,000
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    • 10000 $0.0386
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    TME 2SK3019-TP 2,315 5
    • 1 -
    • 10 $0.16
    • 100 $0.0605
    • 1000 $0.0534
    • 10000 $0.048
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    Micro Commercial Components 2SK3019A-TP

    N-CHANNEL MOSFET SOT-523
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK3019A-TP Cut Tape 2,765 1
    • 1 $0.38
    • 10 $0.266
    • 100 $0.1343
    • 1000 $0.0813
    • 10000 $0.0813
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    2SK3019A-TP Reel 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.04375
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    2SK3019A-TP Digi-Reel 1
    • 1 $0.38
    • 10 $0.266
    • 100 $0.1343
    • 1000 $0.0813
    • 10000 $0.0813
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    Mouser Electronics 2SK3019A-TP
    • 1 $0.38
    • 10 $0.266
    • 100 $0.11
    • 1000 $0.082
    • 10000 $0.043
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    2SK301 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK301 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK301 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK301 Panasonic N-Channel Junction FET Original PDF
    2SK301 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK301 Unknown FET Data Book Scan PDF
    2SK301 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK301 Panasonic Si N-channel junction. AF amplifier, switching. Scan PDF
    2SK301 Panasonic Silicon MOS FETs Scan PDF
    2SK3011 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK3012 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK3012 Shindengen Electric VX-2 Series Power MOSFET Original PDF
    2SK3012 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK3012 Shindengen Electric VX-2 Series Power MOSFET Original PDF
    2SK3013 Shindengen Electric VX-2 Series Power MOSFET Original PDF
    2SK3013 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK3013 Shindengen Electric N-Channel Enhancement type Power MOSFET Original PDF
    2SK3017 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK3017 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3017 Toshiba V-MOS, S,S-Reg DC-DC Converter, MOS-FET N-Channel enhanced Original PDF
    2SK3017 Toshiba Original PDF

    2SK301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.


    Original
    PDF 2SK3018 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)


    Original
    PDF 2SK3019 OT-523 SC-75) 03-Jun-2011 OT-523

    F16W60

    Abstract: 2SK3012 F16W60VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK3012 F16W60VX2 600V 12A N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK3012 F16W60VX2) 00-200V 500mJ F16W60 2SK3012 F16W60VX2

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SK0301 2SK301) SC-43

    2SA20

    Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
    Text: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


    Original
    PDF 2SA2018 2SK3019 2SA20 "dual TRANSISTORs" resistance dual audio circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original
    PDF OT-23 2SK3018 OT-23

    Untitled

    Abstract: No abstract text available
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original
    PDF 2SK3019 100mA)

    Untitled

    Abstract: No abstract text available
    Text: 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.05 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current


    Original
    PDF 2SK3017

    2sk3019

    Abstract: 2SA2018
    Text: UMF6N Transistors Power management dual transistors UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


    Original
    PDF 2SA2018 2SK3019 SC-88

    2sk3019

    Abstract: 2SC5585
    Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. zApplication Power management circuit zStructure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2


    Original
    PDF 2SC5585 2SK3019

    2SC5585

    Abstract: 2SK3019
    Text: UMF9N Transistors Power management dual transistors UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6) 0.2 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.


    Original
    PDF 2SC5585 2SK3019 SC-88

    2SK3019

    Abstract: 4405 2SK301
    Text: SPICE PARAMETER 2SK3019 by ROHM TR Div. * 2SK3019 NMOS model * Date: 2006/09/07 .MODEL 2SK3019 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12


    Original
    PDF 2SK3019 M2SK3019 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 2SK3019 4405 2SK301

    2SK3019

    Abstract: EMF33
    Text: EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 zApplications Power management circuit zDimensions Unit : mm EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package.


    Original
    PDF EMF33 DTB513Z 2SK3019 2SK3019 EMF33

    SPHE8202

    Abstract: SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt
    Text: Saalfeld & Freitas / Curitiba + D4 1N4148 SMT CDLDO 100 BC25 jan/2006 RFGND 1000PF GND 0.1UF BC26 0.01UF 0.1UF 0.1UF BC22 0.1UF C43 0.1UF BC21 BC24 3904 Q12 + DVD_VR CD_VR 0.1UF 0.1UF BC28 0.1UF BC29 RFGND RFGND Q9 2SK3018 2 R52 R45 2 Q7 2SK3018 100K 100K


    Original
    PDF jan/2006 1000PF 2SK3018 NC/100PF 120PF) 27MHz 1000PF SPHE8202 SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt

    2SK3018

    Abstract: UM5K1N
    Text: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.


    Original
    PDF 2SK3018 100mA) 30ipment UM5K1N

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original
    PDF OT-523 2SK3019 OT-523

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET SOT-523 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits


    Original
    PDF OT-523 2SK3019 OT-523 100mA

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 ● Low noies, high gain ● High gate to drain voltage VGDO


    Original
    PDF 2SK0301 2SK301)

    UM5K1N

    Abstract: 2SK3018 two transistor forward
    Text: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.


    Original
    PDF 2SK3018 100mA) UM5K1N two transistor forward

    2SC5585

    Abstract: 2SK3019
    Text: EMF9 Transistors Power management dual transistors EMF9 2SC5585 and 2SK3019 are housed independently in a EMT6 package. !Application Power management circuit !Structure Silicon epitaxial planar transistor ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2


    Original
    PDF 2SC5585 2SK3019

    Untitled

    Abstract: No abstract text available
    Text: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75)


    Original
    PDF 2SK3019T OT-523 SC-75) 03-Jun-2011 OT-523

    Untitled

    Abstract: No abstract text available
    Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating


    Original
    PDF 2SK3019 100mA)

    2SC5585

    Abstract: 2SK3019 T108 IMF9
    Text: UMF9N / IMF9 Transistors Power management dual transistors UMF9N / IMF9 2SC5585 and 2SK3019 are housed independently in a UMT or SMT package. !External dimensions (Units : mm) !Application Power management circuit 0.65 (1) 1.25 2.0 1.3 (3) (2) (4) (5) (6)


    Original
    PDF 2SC5585 2SK3019 SC-88 T108 IMF9

    2SK3017

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source O N Resistance


    OCR Scan
    PDF 2SK3017 L-12-(