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    2SK304 Price and Stock

    Panasonic Electronic Components 2SK3047

    MOSFET N-CH 800V 2A TO220D-A1
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    Panasonic Electronic Components 2SK3046

    MOSFET N-CH 500V 7A TO220D-A1
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    Panasonic Electronic Components 2SK3043

    MOSFET N-CH 450V 5A TO220D-A1
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    Panasonic Electronic Components 2SK3048

    MOSFET N-CH 600V 3A TO220D-A1
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    Panasonic Electronic Components 2SK3045

    MOSFET N-CH 500V 2.5A TO220D-A1
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    Find more 2SK304 price and stock on Findchips.com

    2SK304 Datasheets (40)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK304 Sanyo Semiconductor General-purpose amplifiers, impedance converters Original PDF
    2SK304 Unknown FET Data Book Scan PDF
    2SK304 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK304 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK304 Sanyo Semiconductor Small Signal Junction FETS / MOSFETS Scan PDF
    2SK304 Sanyo Semiconductor Small Signal FETs Scan PDF
    2SK304 Sanyo Semiconductor Low-frequency Amp Applications Scan PDF
    2SK304 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK3042 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK3042 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3042 Panasonic TRANS MOSFET N-CH 250V 7A 3TO-220D-A1 Original PDF
    2SK3043 Panasonic TRANS MOSFET N-CH 450V 5A 3TO-220D-A1 Original PDF
    2SK3043 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK3043 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3043 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3044 Panasonic TRANS MOSFET N-CH 450V 7A 3TO-220D-A1 Original PDF
    2SK3044 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3044 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK3044 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK3045 Panasonic TRANS MOSFET N-CH 500V 2.5A 3TO-220D-A1 Original PDF

    2SK304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3043

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3043 100mJ O-220D 2SK3043

    2SK3045

    Abstract: DSA003714
    Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2


    Original     		PDF 2SK3045 O-220D 2SK3045 DSA003714

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3046

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3045

    k3047

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3047 k3047

    5a diode

    Abstract: 2SK3042
    Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 ■ Applications


    Original     		PDF 2SK3042 O-220D 5a diode 2SK3042

    2SK3042

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm 9.9±0.3 3.0±0.5 15.0±0.5


    Original     		PDF 2SK3042 O-220D-A1 2SK3042

    k3047

    Abstract: 2SK3047
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ


    Original     		PDF 2002/95/EC) 2SK3047 k3047 2SK3047

    2SK3045

    Abstract: 15a diode
    Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3045 O-220D-A1 2SK3045 15a diode

    2SK3048

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3048 O-220D-A1 2SK3048

    2SK3042

    Abstract: drain
    Text: Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3042 O-220D-A1 2SK3042 drain

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3044

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3047 O-220D-A1 K3047

    2SK304

    Abstract: ITR00647 ITR00648
    Text: 2SK304 注文コード No. N 0 8 5 0 F 三洋半導体データシート 半導体ニューズ No.N850E をさしかえてください。 2SK304 N チャネル接合型シリコン電界効果トランジスタ 低周波増幅用 用途 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。


    Original     		PDF 2SK304 N850E IM/42594HO ITR00652 ITR00651 ITR00653 ITR00654 ITR00655 2SK304 ITR00647 ITR00648

    K3046

    Abstract: 2SK3046
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ


    Original     		PDF 2002/95/EC) 2SK3046 K3046 2SK3046

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3046

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 15.6 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed


    Original     		PDF 2002/95/EC) 2SK3045 O-220D-A1 K3045

    2SK3048

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay


    Original     		PDF 2SK3048 O-220D 2SK3048

    2SK3047

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2


    Original     		PDF 2SK3047 O-220D 2SK3047

    2SK3044

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 50ns ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3044 130mJ O-220D-A1 2SK3044

    k3044

    Abstract: 2SK3044
    Text: Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageVGSS : ±30 V guaranteed • High-speed switching • No secondary breakdown


    Original     		PDF 2SK3044 k3044 2SK3044

    2SK3049

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 9.9±0.3 3.0±0.5 15.0±0.5 ■ Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2SK3049 O-220D-A1 2SK3049

    2sk4005

    Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321


    Original     		PDF 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2sk4005 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354

    2SK304

    Abstract: No abstract text available
    Text: Ordering n u m b e r:E N 850E No,850E II 2SK304 N-Channel Junction Silicon FET Low-Frequency Amp Applications Applications • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators. Absolute Maximum Ratings atTa = 25°C


    OCR Scan     		PDF EN850E 2SK304 -10HA 2SK304