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Abstract: No abstract text available
Text: 2SJ216- 44Tb2DS OGie^bT I?«? « H i m HITACHI/ OPTOELECTRONICS hlE D SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FE A T U R E S # Low On-Resistance # High Speed Switching # Low Drive Current # 4 V Gate Drive Device - Can be driven from 5V source
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2SJ216
44Tb2DS
Jb20S
DD12T72
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diode t25 4 HO
Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.
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441bEG5
2SK310
diode t25 4 HO
diode b34
b34 diode
2SJ117
11X1
2SK310
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: b lE D 441b2G 5 2SJ117 D D IE ^ IM flbl « H I T H H IT A C H I/tO P T O E L E C T R O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. •
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441b2G
2SJ117
2SK310
TEMPERATURE17
44Tb2DS
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