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    2SK339 Search Results

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    2SK339 Price and Stock

    Rochester Electronics LLC 2SK3391JX

    RF MOSFET 13.7V UPAK
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    DigiKey 2SK3391JX Bulk 134,038 86
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    Renesas Electronics Corporation 2SK3391JX

    - Bulk (Alt: 2SK3391JX)
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    Avnet Americas 2SK3391JX Bulk 4 Weeks 103
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    Rochester Electronics 2SK3391JX 134,038 1
    • 1 $3.55
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    Renesas Electronics Corporation 2SK3391JX01UL

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    Bristol Electronics 2SK3391JX01UL 7,088 2
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    Quest Components 2SK3391JX01UL 5,670
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    Renesas Electronics Corporation 2SK3390IX

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    Bristol Electronics 2SK3390IX 5,681
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    Renesas Electronics Corporation 2SK3390IXTB-E

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    Bristol Electronics 2SK3390IXTB-E 927
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    Find more 2SK339 price and stock on Findchips.com

    2SK339 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK339 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK339 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK3390 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3390 Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK3390 Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK3391 Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391 Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391 Renesas Technology Silicon N Channel MOS FET UHF Power Amplifier Original PDF
    2SK3391JX Renesas Technology Original PDF
    2SK3391JXTL Renesas Technology RF FETs, Discrete Semiconductor Products, MOSFET N-CH 17V 300MA UPAK Original PDF
    2SK3391JXTL-E Renesas Technology Silicon N-Channel MOS FET UHF Power Amplifier Original PDF
    2SK3396 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK3396 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK3397 Toshiba MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: TFP; R DS On (max 0.006); I_S (A): (max 70) Original PDF
    2SK3397 Toshiba Field Effect Transistor Silicon N Channel MOS Type (U-MOS) Original PDF
    2SK3397 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3398 Toshiba Switching Regulator and DC-DC Converter Applications and Motor Drive Applications Original PDF
    2SK3398 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3399 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK339 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3390 REJ03G0208-0400 PLSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0300 PLZZ0004CA-A

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398

    k3397

    Abstract: k339 2SK3397
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅡ 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: Yfs = 110 S (typ.)


    Original     		PDF 2SK3397 k3397 k339 2SK3397

    K339

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 to150 K339

    2SK3390IXTB-E

    Abstract: No abstract text available
    Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3390 REJ03G0208-0400 PLSS0003ZA-A 2SK3390IXTB-E

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397

    2SK3391

    Abstract: 2SK3391JX
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z Previous ADE-208-847 (Z Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0200Z ADE-208-847 2SK3391 2SK3391JX

    2SK3391

    Abstract: 2SK3391JXTL-E on 543 upak 319 0048 0 00 440
    Text: 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0300 Rev.3.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. f = 836 MHz • Compact package capable of surface mounting


    Original     		PDF 2SK3391 REJ03G0209-0300 PLZZ0004CA-A 2SK3391 2SK3391JXTL-E on 543 upak 319 0048 0 00 440

    Untitled

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 to150

    2SK3396

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK3396 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.10+0.05 –0.02 0.33+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Rating Unit VGDO −40 V Gate-source voltage (Drain open)


    Original     		PDF 2SK3396 2SK3396

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 to150

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 to150

    K3398

    Abstract: 2SK3398 K339
    Text: 2SK3398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3398 ○ レギュレータ用､照明用 • 単位: mm : RDS (ON) = 0.4 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 9.0 S (標準)


    Original     		PDF 2SK3398 K3398 2SK3398 K339

    2SK3391

    Abstract: DSA003644
    Text: 2SK3391 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-847 Z 1st. Edition Aug. 2001 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd= 58 % min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK3391 ADE-208-847 D-85622 D-85619 2SK3391 DSA003644

    2SK3397

    Abstract: k3397
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 2SK3397 k3397

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 25transportation 2SK3398

    2SK3390

    Abstract: DSA003644
    Text: 2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 Z 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting


    Original     		PDF 2SK3390 ADE-208-846 D-85622 D-85619 2SK3390 DSA003644

    Untitled

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 100are

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK3398 2SK3398

    2SK3398

    Abstract: No abstract text available
    Text: 2SK3398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK3398 ○ レギュレータ用､照明用 • 単位: mm : RDS (ON) = 0.4 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 9.0 S (標準)


    Original     		PDF 2SK3398 2SK3398

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O S H 2SK3397 TENTATIVE RELAY DRIVE AND DC-DC CONVERTER APPLICATIONS UNIT : mm MOTOR DRIVE APPLICATIONS ' 4, h H • Low Drain - Source ON Resistance: R d s (ON) = 4.0 mQ ( Typ.)


    OCR Scan     		PDF 2SK3397

    2SK3399

    Abstract: K3399 HC marking
    Text: TOSHIBA 2SK3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type jc-MOSV TE N TA TIVE 2SK3399 Switching Regulator Applications • • • • Unit in mm Low drain-source ON resistance? RDS (ON) = 0.54 iî (typ) High forward transfer admittance? lYfel = 5.2 S (typ)


    OCR Scan     		PDF 2SK3399 2SK3399 K3399 HC marking

    2SK339

    Abstract: T460
    Text: NEC j M O S F ie ld E ffe ct T ra n s is to r A r x 2SK339 ‘y * • > High Speed, High Current Switching Industrial Use 2 S K 3391Ì, / J ^ i — V Y '< 'yò-— j > U — X '- W-MB Unit : mm) 10.6 MAX. y>~f, v^^ ¿s^>, S J l ^ D C — DC n K 7 'f ''s FET


    OCR Scan     		PDF 2SK339 2SK339 T460