Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2177
F1E50VX2)
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2SK2177
Abstract: F1E50VX2 F1E5
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 1A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2177
F1E50VX2)
Avalanche177
2SK2177
F1E50VX2
F1E5
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F1E50VX2
Abstract: 2sk2177
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack (Unit : mm) 500V 1A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2177
F1E50VX2)
F1E50VX2
2sk2177
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F1E50VX2
Abstract: 2SK2177
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2177
F1E50VX2)
ch177
F1E50VX2
2SK2177
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2SK2177
Abstract: No abstract text available
Text: V X -n S /U -X /17-M O SFET V X -n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2177 F1E50VX2 500V 1A ') - b’ 9 -i y ' b h <0 i 1-0 P l l , 7-1 £ C.'E < /£ $ i'o Lead type is available. S e e P. 11, 7-1 • R A TIN G S A b s o lu te Maxim um R a tin g s
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/17-M
2SK2177
F1E50VX2)
2SK2177
CF1E50VX2)
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Untitled
Abstract: No abstract text available
Text: V X -H y 'J -X /W -MOSFET . V X -I SERIES POWER MOSFET ¿WBTf-äsH is . w o tn m O U T L IN E D IM E N S IO N S Case : E-pack 2SK2177 F1E50VX2 6.6 ±02 2.55 ±0-2 0.5 ±<u 500v 1a _ 0 (D : Gate Q (D ^ Drain (3) ^ Source 0.6 ±0-2 M 1.1 ±0-2 [Unit ^ mm]
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2SK2177
F1E50VX2)
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ens100
Abstract: 71ra
Text: VX-DvU-X /ffeMOSFET V X -n SERIES P0 H 4 MOSFET O U T L IN E D IM E N S IO N S Case I E-pack 2SK2177 F 1 E 5 0 V X 2 6.6 ±0 2 2.55 - 0.2 500V 1A 0. 5 t 0 1 0.5 0 .6 * ° 2 U ± 0 .2 [Unit '•mm] k O i t o P12, 7 - l £ c * i i < £ S i > „ Lead type is available. S e e P. 12, 7-1
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2SK2177
300fi
F1E50VX2)
ens100
71ra
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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