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    2SK1259 Search Results

    2SK1259 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK1259 Unknown FET Data Book Scan PDF
    2SK1259 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1259 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1259 Panasonic Silicon N-channel Power F-mos Fet Scan PDF

    2SK1259 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 M Di ain sc te on na tin nc ue e/ d ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05 1.60–0.03


    Original     		PDF 2SK1259 MA8082

    2sk1259

    Abstract: MA4Z082WA MA8082
    Text: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type 1 M Di ain sc te on na tin nc ue e/ d type package 3-pin wiring of MA8082 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common 3 ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2SK1259 MA8082 2sk1259 MA4Z082WA MA8082

    2SK125

    Abstract: m2a marking
    Text: 2SK1259 Switching Diodes MA122 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 4 3 +0.1 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C 1 : Cathode 1 4 : Cathode 3 2 : Cathode 2 5 : Cathode 4 3 : Anode 3, 4


    Original     		PDF 2SK1259 MA122 2SK125 m2a marking

    M1B marking

    Abstract: ma4s159
    Text: 2SK1259 Switching Diodes MA4S159 Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 1.25±0.1 • Features Small S-Mini type 4-pin package Åú Independent 2.0±0.1 1.3±0.1 ● incorporating of two elements, enabling high-density mounting


    Original     		PDF 2SK1259 MA4S159 100mA M1B marking ma4s159

    2sk1259

    Abstract: MA4Z082WA MA8082 SS-Mini
    Text: 2SK1259 Zener Diodes Composite Elements M A 4 Z 0 8 2 WA Silicon planer type ● SS-Mini type package 3-pin 1 wiring of MA8082 3 2 +0.05 0.60–0.03 +0.05 0.12–0.02 0.28±0.05 ● Anode-common Unit : mm 1.60±0.1 0.80±0.05 +0.05 • Features 0.80 0.28±0.05


    Original     		PDF 2SK1259 MA8082 2sk1259 MA4Z082WA MA8082 SS-Mini

    Untitled

    Abstract: No abstract text available
    Text: 2SK1259 Power F-MOS FETs 2SK1259 Silicon N-Channel Power F-MOS Unit : mm • Features 4.0 switching : tf = 700ns typ 2.0 drive 1.5 ● Low-voltage 2.0 secondary breakdown 26.0±0.5 ● No 6.0 ● High-speed 3.0 ON-resistance RDS(on) : R DS(on)1= 0.012Ω(typ)


    Original     		PDF 2SK1259 700ns

    Untitled

    Abstract: No abstract text available
    Text: 2SK1259 Switching Diodes MA143, MA143A Silicon epitaxial planer type Unit : mm For switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 2.0±0.2 1.3±0.1 0.65 0.65 Small S-Mini type package with two incorporated elements, enabling high-density mounting ● Series connection in package


    Original     		PDF 2SK1259 MA143 MA143A MA143 MA143A 100mA

    M2FS

    Abstract: M2F MARKING
    Text: 2SK1259 Switching Diodes MA198 Silicon epitaxial planer type 2.8 –0.3 +0.25 2 recovery characteristic trr : 100ns Parameter Symbol Rating Unit VR 40 V Repetitive peak reverse voltage VRRM 40 V Single Series Repetitive peak forward current Single Non-repetitive peak


    Original     		PDF 2SK1259 MA198 100ns) 100mA M2FS M2F MARKING

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MN1873287

    Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
    Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>


    Original     		PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283

    2sk1259

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1259 • b*ì32flS4 oqusst ö43 «pncs. PANAS0N IC IN ] L /E L E K S E I1 I) b^E 2SK1259 ]> Silicon N-channel Power F-MOS FET Package Dimensions ■ Features • Low ON resistance R ds (on) : R ds (on) 1 = 0.01211 (typ.) • High switching rate : tf = 700ns (typ.)


    OCR Scan     		PDF 2SK1259 2SK1259 700ns

    2SK1259

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R Ds (on) l = 0 .0 1 2 i! (typ.) Unit: mm 20.5max. • High switching rate : U = 700ns (typ.) 5.3max. • No secondary breakdown


    OCR Scan     		PDF 2SK1259 700ns t-150 ID-50A Vdd-30V, 2SK1259

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1259 2SK1259 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R ds on : R DS (on) l = 0 .0 1 2 fl (typ.) • High sw itching ra te : tf= 700ns (typ.) • No secondary breakdow n • Low voltage drive is possible


    OCR Scan     		PDF 2SK1259 700ns

    2SK2574

    Abstract: 2SK1259 2SK2377 2SK2659 2SK2578
    Text: • Power F-MOS FET Package Package No. 1Type (D44) N Type (D42) V gss Id (V) (V) (A) TO-220E (D59) 2SK1868 2SK1255 2SK2578 5 2SK2579 10 2SK1033 TOP-3F(a) (D63) V dss TC>-220F(a) (D55) 2SK1967 TOP-3(a) (D60) TOP-3E (D65) MT4 (D41) TOP-3L (D 67) 60 ATentative


    OCR Scan     		PDF 2SK1868 -220F 2SK1255 O-220E 2SK2578 2SK2579 2SK1967 2SK2659 2SK1033 2SK2574 2SK2574 2SK1259 2SK2377 2SK2659

    OF03

    Abstract: 2SK1263 2SK2377
    Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128


    OCR Scan     		PDF A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377

    2SK1248

    Abstract: 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1243 2SK1244 2SK1245
    Text: - 92 - f m. % *± « ffl m E mmi A £ V* h ft* E ft K V * (V) fé I* !xl X ft (A) P d /P c h (W) I g SS (max) (A) Vg s (V) (min) (A) «I (max) V d s (A) (V) 'te & (Ta=25tî) (min) (max) V d s (V) (V) (V) gm (min) (tys) V d s (S) (V) (S) Id (A) 2SK1241


    OCR Scan     		PDF 2SK1241 ZSK1242 2SK1243 -10/i 2SK1244 2SK1245 2SK12230 130ns 190nstyp 2SK1262 2SK1248 2SK1257 2SK124 2SK1250 2SK1241 2SK1249 2sk1259 2SK1244

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    2sk2015

    Abstract: 2SK2277 2SK2377 2SK1635 2SK2014 2SK2016 2SK1257 2sk1259 2SK1262 2SK2276
    Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta = 2 5 °C) Type No. Application Pch 2SJ0398 2SK2014 2SK2015 Switching Nch 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 *1 0 = 2 5 ^


    OCR Scan     		PDF 2SJ0398 2SK2014 2SK2015 2SK2016 A2SK2211 A2SK2276 A2SK2277 A2SK2342 2SK1262 O-220F 2SK2277 2SK2377 2SK1635 2SK1257 2sk1259 2SK2276

    2SK2277

    Abstract: 2SK2580 220E4 2SK2015 2SK2014
    Text: FET, IGBT, IPD • Power F-MOS FETs Line-up Vgs =10V ÎV dss \ (V) 60 80 100 150 170 250 450 500 550 800 900 (A) \ 1 2SK2277 Mini-Powerl .0 2SK2014 UTypei.O ★2SK2047 I Type b.o (Id =1.2A) 2SK2538 220Fz.o ★2SK1834 220Fro ★2SK1980 N Type 7.0 ★ A2SK2128


    OCR Scan     		PDF 2SK2277 2SK2014 2SK2047 2SK2538 220Fz 2SK1834 220Fro 2SK1980 A2SK2128 220E-0 2SK2580 220E4 2SK2015

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


    OCR Scan     		PDF 2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996