122ID
Abstract: 2062a 2SJ416 ITR00500 ITR00501 ITR00502 ITR00503 ITR00504 ITR00505
Text: 注文コード No. N 5 2 6 6 2SJ416 No. 5 2 6 6 52599 新 2SJ416 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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2SJ416
250mm2
--15V
ITR00508
--10V
ITR00506
ITR00509
ITR00510
122ID
2062a
2SJ416
ITR00500
ITR00501
ITR00502
ITR00503
ITR00504
ITR00505
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52664
Abstract: 2SJ416
Text: Ordering number:EN5266 P-Channel Silicon MOSFET 2SJ416 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ416] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5 1
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EN5266
2SJ416
2SJ416]
25max
250mm2×
52664
2SJ416
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2SJ416
Abstract: No abstract text available
Text: Ordering number:EN5266 P-Channel Silicon MOSFET 2SJ416 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SJ416] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5 1
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EN5266
2SJ416
2SJ416]
25max
250mm2Ã
2SJ416
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TA-2770
Abstract: 2SJ416 FX856 53723
Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
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FX856
FX856
2SJ416
SB07-03P
750mm2
IT01339
IT01337
IT01341
IT01342
TA-2770
2SJ416
53723
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2SJ416
Abstract: FX856 SB07-03P 53723
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
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ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
SB07-03P
53723
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 • The FX856 composite device consists of following two devices to facilitate high-density mounting. One
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ENN5372A
FX856
FX856]
FX856
2SJ416
SB07-03P,
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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2SJ469
Abstract: No abstract text available
Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5
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2SJ284
2SJ187
2SJ287
2SJ416
2SJ188
O-220
O-220ML
2SJ189
2SJ417
2SJ418
2SJ469
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2SJ416
Abstract: No abstract text available
Text: Ordering n u m b e r:EN 5266 2SJ416 No.5266 P-Channel Silicon MOSFET SMiYO i Ultrahigh-Speed Switching Applications F e a tu re s •Low ON-resistance. • U ltrahigh-speed switching. ■4 V drive. ^solute M axim um R a tin g s at Ta = 25°C Drain-to-Source Voltage
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EN5266
2SJ416
250mm2
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
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2SK22
Abstract: SGF23
Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65
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2SK242
2SK283
2SK436
2SK443
2SK543
2SK545
2SK771
2SK93
2SK932
2SK968
2SK22
SGF23
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2SK2437
Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process
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MT980624TR
2SK2437
CPH3304
mosfet marking kf
78m marking
2SK2442
48M marking
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