2SJ284
Abstract: No abstract text available
Text: Ordering number:EN4220 P-Channel Silicon MOSFET 2SJ284 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ284] 0.16 0.95 0.95 2 1.9 2.9 2.5
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EN4220
2SJ284
2SJ284]
2SJ284
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PDF
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2SJ284
Abstract: ITR00358 ITR00359 ITR00360 ITR00361 ITR00362 ITR00363
Text: 注文コード No.N 4 2 2 0 2SJ284 No. 4 2 2 0 61499 新 2SJ284 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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Original
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2SJ284
150mA
150mA,
--10V
ITR00362
ITR00363
--15V
2SJ284
ITR00358
ITR00359
ITR00360
ITR00361
ITR00362
ITR00363
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PDF
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2SJ284
Abstract: No abstract text available
Text: Ordering number:EN4220 P-Channel Silicon MOSFET 2SJ284 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ284] 0.16 0.95 0.95 2 1.9 2.9 2.5
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Original
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EN4220
2SJ284
2SJ284]
2SJ284
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PDF
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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PDF
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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Original
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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PDF
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2SJ469
Abstract: No abstract text available
Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5
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OCR Scan
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2SJ284
2SJ187
2SJ287
2SJ416
2SJ188
O-220
O-220ML
2SJ189
2SJ417
2SJ418
2SJ469
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PDF
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2SJ284
Abstract: marking am
Text: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage
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OCR Scan
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EN4220
2SJ284
10/ms,
NS4220-3/3
marking am
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PDF
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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OCR Scan
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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PDF
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2sk77
Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications
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OCR Scan
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250mm
2SK212,
2SK315,
2SK544,
2SK669,
2SK1841
2SK2270.
2SK304,
2SK404,
2SK427,
2sk77
2SK772
2SK444
2sk20
2SK1332
2SK968
2sk332
2sk427
2SK36
2sk377 j
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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OCR Scan
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2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
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PDF
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J289
Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications
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OCR Scan
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Sma11-sized
2SK1839<
2SK536
2SK1840UJ)
3SK248CNJ)
2SK669
2SK1841
2SK583
Characteristics/Ta-25X;
12/55m
J289
3SK266
2SK1728
3sk251
DS-17 SANYO
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PDF
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2SK968
Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Text: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller
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OCR Scan
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250mm
2SK2170
2SK1068CB)
2SK1069CFJ)
2SK1332
2SK1375CC)
2SK209KH)
2SK212,
2SK315,
2SK544.
2SK968
2SK1375
2sk2073
2SK1747
2SK333
2SK544
2SK937
2SK669
2SK332
2SK715
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PDF
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2SK2437
Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process
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OCR Scan
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MT980624TR
2SK2437
CPH3304
mosfet marking kf
78m marking
2SK2442
48M marking
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PDF
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SK968
Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Text: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications
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OCR Scan
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250mm
ics/Ta-25
2SK212
2SK315
2SK544
2SK669,
2SK1841
2SK2270.
2SK304,
2SK427,
SK968
2SK937
2SK669
2SJ286
2SK5
2SK543
2SK436
2SK715
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PDF
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2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
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OCR Scan
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2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
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PDF
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2SJ239
Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
Text: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS
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OCR Scan
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Ta-25
2SJ230
2SJ231
2SJ232
2SJZ33
2SJ234Ã
155ns,
500nstyp
2SJ291
200ns,
2SJ239
2SJ238
2sJ241
2SJ240
2SJ292
2SJ295
2SJ232
2SJ234
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PDF
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