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    2SD613 Search Results

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    2SD613 Price and Stock

    Rochester Electronics LLC 2SD613E

    POWER BIPOLAR TRANSISTOR NPN
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    DigiKey 2SD613E Bulk 4,005 485
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    onsemi 2SD613E

    - Bulk (Alt: 2SD613E)
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    Avnet Americas 2SD613E Bulk 4 Weeks 583
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    Newark 2SD613E Bulk 590
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    Rochester Electronics 2SD613E 500 1
    • 1 $0.6256
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    Others 2SD613

    Bipolar Junction Transistor, NPN Type, TO-220AB
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    Quest Components 2SD613 494
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    2SD613 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD613 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistor, 85V/6A, AF 25 to 35W Output Applications Original PDF
    2SD613 Sanyo Semiconductor 85V/6A, AF 25 to 35W Output Applications Original PDF
    2SD613 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SD613 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD613 Mospec POWER TRANSISTORS(6A,85V,40W) Scan PDF
    2SD613 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD613 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD613 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD613 Unknown Cross Reference Datasheet Scan PDF
    2SD613 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD613 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD613 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD613 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD613 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD613 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD613 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SD613 Sanyo Semiconductor Large Signal Transistors (for high frequency, high Voltage and general purpose use) Scan PDF
    2SD613 Sanyo Semiconductor 85V/6A, AF 25 to 35W Output Applications Scan PDF
    2SD613 Sanyo Semiconductor Transistors / Switching Transistors Scan PDF
    2SD613D Unknown Scan PDF

    2SD613 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD617

    Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P
    Text: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm


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    PDF ENN6662 2SB633P/2SD613P 2SB633P 2SD613P 2010C 2SD613P] 2SB633P O-220 2SD617 transistors 13001 633P 2SB633 2SD613P 613P

    2SB633

    Abstract: 513H 2SD613
    Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


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    PDF 2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 2SB633 513H 2SD613

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D
    Text: SavantIC Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


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    PDF 2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D

    transistor 2sB633

    Abstract: 2sd613 2SB633 513H 2sb633 sanyo
    Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


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    PDF 2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 transistor 2sB633 2sd613 2SB633 513H 2sb633 sanyo

    2SB633

    Abstract: 2SD613
    Text: Inchange Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity


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    PDF 2SB633 O-220C 2SD613 5-35W 2SB633 2SD613

    2SB633

    Abstract: 2SD613 2SD613 D
    Text: JMnic 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity audio frequency amplifier output stage


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    PDF 2SB633 O-220C 2SD613 5-35W 2SB633 2SD613 2SD613 D

    2SD613

    Abstract: Shing 2SB633 2sb633 transistor
    Text: 2SB633 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD613 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    PDF 2SB633 O-220 2SD613 -100V 2SD613 Shing 2SB633 2sb633 transistor

    2SB633

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613
    Text: SavantIC Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD613 ·High breakdown voltage :VCEO=-85V ·High current :IC=-6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


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    PDF 2SB633 O-220C 2SD613 5-35W 2SB633 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613

    2SB633

    Abstract: 2SD613
    Text: 2SD613 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB633 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    PDF 2SD613 O-220 2SB633 2SB633 2SD613

    2SD613 equivalent

    Abstract: 2SD613 2SB633
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB633 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Complement to Type 2SD613 APPLICATIONS ·Audio frequency 25~35 watts output applications. n c


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    PDF 2SB633 2SD613 2SD613 equivalent 2SD613 2SB633

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633
    Text: Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


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    PDF 2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


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    PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


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    PDF 000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    d613

    Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
    Text: O rd e rin g n u m b e r: EN513H 2SB633/2SD613 No.513H PNP/NPN Epitaxial Planar Silicon Transistors SAftfYO i 85V/6A, AF 25 to 35W Output Applications F eatu re s • High breakdown voltage V ceo^SV, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute M axim um R atings at Ta = 25C,C


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    PDF EN513H 2SB633/2SD613 2SB633 40VfIE d613 D613 voltage 2SD613 2SB633 513H 2sb633 sanyo

    2SB633

    Abstract: 2SD613 transistor 2sB633
    Text: ¿2&M0 SPEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 25W to 3 5 W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage VCE sat = 2.0V(Max) @ I c=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD613


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    PDF to35W 2SD613 2SB633 2SB633 2SD613 transistor 2sB633

    si 13001

    Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm


    OCR Scan
    PDF ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001

    ir 513h

    Abstract: PF 513h D613 D613 voltage 2SD613 EN513H 2SB633 2SB833 ir 513h ic 513H
    Text: O rd e rin g n u m b e r : E N 513H 2SB633/2SD613 i PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 85V/6A, AF 25 to 35W Output Applications Features •High breakdown voltage Vceo85V, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute Maximum R atings at T a=25°C


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    PDF EN513H 2SB633/2SD613 Vceo85V, 2SB633 2SB633/2SD613 633/2SD613 833/2S ir 513h PF 513h D613 D613 voltage 2SD613 2SB833 ir 513h ic 513H

    si 13001

    Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC


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    PDF ENN6662 2SB633P 2SD613P 2SB633P 2SD613P] O-220 IT02147 IT02149 SB633 si 13001 transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor

    2SD613

    Abstract: ica 700 2SB633
    Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for the output stage of 25W to 35W AF power amplifier 2SD613 FEATURES: * Low Coiiector-Emitter Saturation Voltage VCE sa tf 2.0V(Max @ Ic=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SB633


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    PDF 2SB633 2SD613 2SD613 ica 700 2SB633

    2sc2460b

    Abstract: 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499 2SC1815
    Text: - m s T y p e No. € tt M anuf. i f v ît y i f y *r y 2 SC 2307 y - y 'r y 2SC 2308— 2SC 2309 -*- ED CD l=h 14 2SC 2305 2SC 2306«. 2SC 2310 • 2SC 2311 'Mitrii 2SC 2313 ' « H* •tf- 2SC 2314 2SC 2 3 1 5 ^ ' ÎL = * SANYO 2SC 2SC 2322 ŸÀ T MATSUSHITA


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    PDF 2SC3040 2SD641 2SC2819 2SC3042 2SC2751 2SC2740 2SC3331 2SC1815 2SC945 2SC3311A 2sc2460b 2SC1957 2SC2320 25C945 2SC945 25c1815 2SC2313 2SC2560 2SC2499