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    2SB633 Price and Stock

    Rochester Electronics LLC 2SB633E

    Power Bipolar Transistor, 6A, 85
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    onsemi 2SB633E

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    Rochester Electronics 2SB633E 900 1
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    2SB633 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB633 Sanyo Semiconductor Epitaxial Planar Silicon Transistor 85V-6A, AF 25 Original PDF
    2SB633 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistor Original PDF
    2SB633 Wing Shing Computer Components PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SB633 Mospec POWER TRANSISTORS(6.0A,85V,40W) Scan PDF
    2SB633 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB633 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB633 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB633 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB633 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB633 Unknown Scan PDF
    2SB633 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB633 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB633 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB633 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB633 Unknown Transistor Replacements Scan PDF
    2SB633 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB633 Unknown Cross Reference Datasheet Scan PDF
    2SB633 Sanyo Semiconductor Large Signal Transistors (for high frequency, high Voltage and general purpose use) Scan PDF
    2SB633 Sanyo Semiconductor Transistors / Switching Transistors Scan PDF
    2SB633 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF

    2SB633 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD617

    Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P
    Text: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm


    Original     		PDF ENN6662 2SB633P/2SD613P 2SB633P 2SD613P 2010C 2SD613P] 2SB633P O-220 2SD617 transistors 13001 633P 2SB633 2SD613P 613P

    2SB633

    Abstract: 513H 2SD613
    Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


    Original     		PDF 2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 2SB633 513H 2SD613

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D
    Text: SavantIC Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D

    transistor 2sB633

    Abstract: 2sd613 2SB633 513H 2sb633 sanyo
    Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


    Original     		PDF 2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 transistor 2sB633 2sd613 2SB633 513H 2sb633 sanyo

    2SB633

    Abstract: 2SD613
    Text: Inchange Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity


    Original     		PDF 2SB633 O-220C 2SD613 5-35W 2SB633 2SD613

    2SB633

    Abstract: 2SD613 2SD613 D
    Text: JMnic 2SB633 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD613 ・High breakdown voltage :VCEO=-85V ・High current :IC=-6A APPLICATIONS ・Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB633 O-220C 2SD613 5-35W 2SB633 2SD613 2SD613 D

    2SD613

    Abstract: Shing 2SB633 2sb633 transistor
    Text: 2SB633 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD613 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SB633 O-220 2SD613 -100V 2SD613 Shing 2SB633 2sb633 transistor

    2SB633

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613
    Text: SavantIC Semiconductor Product Specification 2SB633 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD613 ·High breakdown voltage :VCEO=-85V ·High current :IC=-6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB633 O-220C 2SD613 5-35W 2SB633 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD613

    2SB633

    Abstract: 2SD613
    Text: 2SD613 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB633 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SD613 O-220 2SB633 2SB633 2SD613

    2SD613 equivalent

    Abstract: 2SD613 2SB633
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB633 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -85V(Min) ·Complement to Type 2SD613 APPLICATIONS ·Audio frequency 25~35 watts output applications. n c


    Original     		PDF 2SB633 2SD613 2SD613 equivalent 2SD613 2SB633

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633
    Text: Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


    Original     		PDF 000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    2SB823

    Abstract: No abstract text available
    Text: •a u 3 Discontii Package Larger FP 2SB544|P2 Larger FP Larger 2SB559 L F Power Amp, Medium Speed Switching FP 2SBS60 FP 2SB598 FP Electronic Governor DC* DC Converter, 1W Sound Output 2SB633P L F Power Amp, 25 to 3SW Output 2SB634 L F Power Amp 2SB544 M P )


    OCR Scan     		PDF 2SB544 2SB559 2SBS60 2SB598 2SB633P 2SC426 2SC536 2SB1037 2SB991 2SB823

    d613

    Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
    Text: O rd e rin g n u m b e r: EN513H 2SB633/2SD613 No.513H PNP/NPN Epitaxial Planar Silicon Transistors SAftfYO i 85V/6A, AF 25 to 35W Output Applications F eatu re s • High breakdown voltage V ceo^SV, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute M axim um R atings at Ta = 25C,C


    OCR Scan     		PDF EN513H 2SB633/2SD613 2SB633 40VfIE d613 D613 voltage 2SD613 2SB633 513H 2sb633 sanyo

    si 13001

    Abstract: transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001 2SB633P 2SD613P
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P ISAfÊYOl 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions •High breakdown voltage, VCEO 85V, high current 6A. •AF 35 to 45W output. unit : mm


    OCR Scan     		PDF ENN6662 2SB633P 2SD613P 2SD613P] O-220 si 13001 transistors 13001 513P HA 13001 LB 13001 TA-3082 SB633 IC HA 13001

    ir 513h

    Abstract: PF 513h D613 D613 voltage 2SD613 EN513H 2SB633 2SB833 ir 513h ic 513H
    Text: O rd e rin g n u m b e r : E N 513H 2SB633/2SD613 i PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 85V/6A, AF 25 to 35W Output Applications Features •High breakdown voltage Vceo85V, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute Maximum R atings at T a=25°C


    OCR Scan     		PDF EN513H 2SB633/2SD613 Vceo85V, 2SB633 2SB633/2SD613 633/2SD613 833/2S ir 513h PF 513h D613 D613 voltage 2SD613 2SB833 ir 513h ic 513H

    si 13001

    Abstract: transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor
    Text: Ordering number : ENN6662 PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions • High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm 201 OC


    OCR Scan     		PDF ENN6662 2SB633P 2SD613P 2SB633P 2SD613P] O-220 IT02147 IT02149 SB633 si 13001 transistors 13001 13001 PNP 513P 13001 npn 613P 533P ENN6662 sd613 si 13001 transistor

    ir 513h

    Abstract: d613 PF 513h D613 voltage 2SB633 513H VCE085V 2SD613 EN513H ED1000
    Text: Ordering number:EN513H 2SB633/2SD 613 N 0.513H J PN P/N PN E p itax ial P la n a r Silicon T ransistors S A \Y O I 85V/6A, AF 25 to 35W Output Applications F e a tu r e s •H igh breakdow n voltage VCE085V, high current 6A. • AF25 to 35W output. : 2SB633


    OCR Scan     		PDF EN513H 2SB633/2SD613 VCE085V, 2SB633 633/2SD613 5D613 c1707b ir 513h d613 PF 513h D613 voltage 513H VCE085V 2SD613 EN513H ED1000

    2SD613

    Abstract: ica 700 2SB633
    Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for the output stage of 25W to 35W AF power amplifier 2SD613 FEATURES: * Low Coiiector-Emitter Saturation Voltage VCE sa tf 2.0V(Max @ Ic=4.0A,Ib=0.4A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SB633


    OCR Scan     		PDF 2SB633 2SD613 2SD613 ica 700 2SB633

    2SB557 TOSHIBA

    Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
    Text: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601


    OCR Scan     		PDF 2SB596 2SA1634 2SB544 2SA496 2SB562 2SA683 2SB1035 2SA934 2SB596 2SA1069 2SB557 TOSHIBA 2SB1314 toshiba 2sb554 2SB546A 2sa483 2SB554 2SB54 2SB557 2SB857