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    2SD1223 Search Results

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    2SD1223 Price and Stock

    Toshiba America Electronic Components 2SD1223(TE16L1,NQ)

    TRANS NPN DARL 80V 4A PW-MOLD
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    DigiKey 2SD1223(TE16L1,NQ) Digi-Reel 2,000 1
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    2SD1223(TE16L1,NQ) Cut Tape 2,000 1
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    2SD1223(TE16L1,NQ) Reel 2,000 2,000
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    Mouser Electronics 2SD1223(TE16L1,NQ) 378
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    Chip1Stop 2SD1223(TE16L1,NQ) Cut Tape 2,000
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    Toshiba America Electronic Components 2SD1223,L1XGQ(O

    TRANSISTOR NPN DARL PWMOLD
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    DigiKey 2SD1223,L1XGQ(O Reel
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    Toshiba America Electronic Components 2SD1223(TE16L1NQ)

    Trans Darlington NPN 80V 3-Pin PW-Mold T/R - Tape and Reel (Alt: 2SD1223(TE16L1,NQ))
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    Avnet Americas 2SD1223(TE16L1NQ) Reel 18 Weeks 2,000
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    Avnet Asia 2SD1223(TE16L1NQ) 12 Weeks 2,000
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    2SD1223 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1223 Unknown Scan PDF
    2SD1223 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1223 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1223 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1223 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1223 Unknown Cross Reference Datasheet Scan PDF
    2SD1223 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1223 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1223 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1223 Toshiba Silicon NPN transistor for switching applications, hammer drive and pulse motor drive applications power amplifier applications Scan PDF
    2SD1223 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)(DARLINGTON) Scan PDF
    2SD1223(2-7B1A) Toshiba 2SD1223 - TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SD1223(2-7B2A) Toshiba 2SD1223 - TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SD1223(2-7J1A) Toshiba 2SD1223 - TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SD1223,L1XGQ(O Toshiba America Electronic Components TRANSISTOR NPN DARL PWMOLD Original PDF
    2SD1223(LB) Toshiba TRANS DARLINGTON NPN 80V 4A 3(2-7B1A) Scan PDF
    2SD1223(TE16L1,NQ) Toshiba 2SD1223 - TRANSISTOR NPN 80V 4A PW MOLD Original PDF

    2SD1223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1223

    Abstract: 2SD1223 a4503 2SB908
    Text: 2SD1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908 20070701-JA D1223 2SD1223 a4503 2SB908

    D1223

    Abstract: 2SB908 2SD1223
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908. D1223 2SB908 2SD1223

    Untitled

    Abstract: No abstract text available
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908.

    D1223

    Abstract: No abstract text available
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908. D1223

    Untitled

    Abstract: No abstract text available
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908.

    Untitled

    Abstract: No abstract text available
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1223 2SB908.

    d1223

    Abstract: 2SB908 2SD1223
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908. d1223 2SB908 2SD1223

    Untitled

    Abstract: No abstract text available
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908.

    d1223

    Abstract: 2SD1223 2SB908
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908. d1223 2SD1223 2SB908

    D1223

    Abstract: a4503 2SB908 2SD1223
    Text: 2SD1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SD1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD1223 2SB908 D1223 a4503 2SB908 2SD1223

    D1223

    Abstract: A4503 2SD1223 2SB908
    Text: 2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original     		PDF 2SD1223 2SB908. D1223 A4503 2SD1223 2SB908

    b908

    Abstract: 2SB908 2SD1223 transistor b908
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 b908 2SB908 2SD1223 transistor b908

    B908

    Abstract: 2SB908 2SD1223
    Text: 2SB908 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB908 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −2 V, IC = −1 A)


    Original     		PDF 2SB908 2SD1223 20070701-JA B908 2SB908 2SD1223

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor b908

    Abstract: b908 2SB908 2SD1223 10MSA
    Text: 2SB908 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB908 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •


    Original     		PDF 2SB908 2SD1223 transistor b908 b908 2SB908 2SD1223 10MSA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1223 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 SWITCHING APPLICATIONS U n it in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS H ig h D C C urrent G ain : h p E (1) = 2000 (M in .)


    OCR Scan     		PDF 2SD1223 2SB908.

    2SD1223

    Abstract: 2SD1223 Q 2SB908
    Text: TO SH IBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 223 HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)


    OCR Scan     		PDF 2SD1223 2SB908. 2SD1223 2SD1223 Q 2SB908

    2SD1223

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm S8MAX. FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage : VcE(sat) = l->V(Max.) (Ic=3A)


    OCR Scan     		PDF 2SD1223 2SB908. O-300Q 50X50xG8nunt 2SD1223

    2SD1223

    Abstract: 2SB908
    Text: 2SD1223 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.) Low Saturation Voltage : V q ^ (sat) = 1.5 V (Max.)


    OCR Scan     		PDF 2SD1223 2SB908. 2SD1223 2SB908

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2SD1223 2 S D 1 223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS High DC Current Gain : hfE (1) = 2000 (Min.) Low Saturation Voltage : V çe (sat) = 1-5 V (Max.)


    OCR Scan     		PDF 2SD1223 2SB908.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD1223 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) mm mmr v SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-


    OCR Scan     		PDF 2SD1223 2SB908.

    3A 100V npn LOW SATURATION VOLTAGE

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage


    OCR Scan     		PDF 2SD1223 2SB908. 3A 100V npn LOW SATURATION VOLTAGE

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SB908 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=-2V, IC=-1A) . Low Saturation Voltage : ^CE(sat)“-1•^(Max.) (IC=-3A)


    OCR Scan     		PDF 2SB908 2SD1223. 13ASE

    te 1819

    Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
    Text: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =


    OCR Scan     		PDF 2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929