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    Panasonic Electronic Components 2SD1267AP

    TRANS NPN 80V 4A TO220F-A1
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    Panasonic Electronic Components 2SD12670P

    TRANS NPN 60V 4A TO220F-A1
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    2SD1267 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1267 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1267 Panasonic NPN Transistor Original PDF
    2SD1267 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1267 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1267 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1267 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1267 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1267 Unknown Cross Reference Datasheet Scan PDF
    2SD1267 Panasonic Silicon Medium Power Transistors Scan PDF
    2SD12670P Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60VCEO 4A TO-220F Original PDF
    2SD1267A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1267A Panasonic NPN Transistor Original PDF
    2SD1267A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1267A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1267A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1267A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1267A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1267A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1267A Unknown Cross Reference Datasheet Scan PDF
    2SD1267A Panasonic Silicon Medium Power Transistors Scan PDF

    2SD1267 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB942

    Abstract: 2SB942A 1267A
    Text: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A


    Original     		2SB942 2SB942A O-220Fa 2SD1267/1267A O-220Fa) 2SB942 10MHz 2SB942A 1267A PDF

    2SB0942

    Abstract: 2SB0942A 2SD1267 2SD1267A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm 10.0±0.2 4.2±0.2 M Di ain sc te on na tin nc


    Original     		2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 O-220F-A1 2SB0942A 2SD1267 2SD1267A PDF

    2SB942

    Abstract: 2SB942A 2SD1267 2SD1267A
    Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to 2SD1267 Ratings


    Original     		2SD1267, 2SD1267A 2SB942 2SB942A 2SD1267 150mA 2SB942A 2SD1267 2SD1267A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1267AP Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4


    Original     		2SD1267AP Freq20MÃ PDF

    2SB942

    Abstract: 2SB942A
    Text: JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A


    Original     		2SB942 2SB942A O-220Fa 2SD1267/1267A O-220Fa) 2SB942 2SB942A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity


    Original     		2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A PDF

    SC671

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)


    Original     		2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A SC671 PDF

    2SD1267

    Abstract: 2SD1267A
    Text: Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SB942/942A


    Original     		2SD1267 2SD1267A O-220Fa 2SB942/942A O-220Fa) 2SD1267 2SD1267A PDF

    2SD1267A

    Abstract: 2SB0942 2SB0942A 2SD1267
    Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3


    Original     		2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A 2SB0942A 2SD1267 PDF

    2SB0942

    Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te


    Original     		2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A PDF

    2SB942

    Abstract: 2SB942A 2SD1267 2SD1267A
    Text: Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB942 base voltage 2SB942A Collector to 2SB942 Ratings


    Original     		2SB942, 2SB942A 2SD1267 2SD1267A 2SB942 100mA 2SB942 2SB942A 2SD1267A PDF

    2SD1267A

    Abstract: 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267
    Text: Power Transistors 2SB0942 2SB942 , 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat)


    Original     		2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SD1267A 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1267A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4


    Original     		2SD1267A Freq20MÃ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD1267AQ Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4


    Original     		2SD1267AQ Freq20MÃ PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A • Features 4.2±0.2 5.5±0.2


    Original     		2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A PDF

    2SB0942

    Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
    Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 2SB942 and 2SB0942A (2SB942A) Unit: mm • Features Parameter (TC=25˚C) Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to


    Original     		2SD1267, 2SD1267A 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A PDF

    2SB942

    Abstract: 2SD1267 transistor 2sd1267
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB942 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.5V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1267 APPLICATIONS ·Designed for low-frequency power amplifications.


    Original     		2SB942 2SD1267 10MHz 2SB942 2SD1267 transistor 2sd1267 PDF

    2SB0942

    Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te


    Original     		2002/95/EC) 2SB0942 2SB942) 2SB0942A 2SB942A) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A PDF

    2SD1267

    Abstract: 2SD1267A
    Text: SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A


    Original     		2SD1267 2SD1267A O-220Fa 2SB942/942A 2SD1267 2SD1267A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complimentary to 2SB0942 and 2SB0942A Unit: mm Parameter Collector-base voltage 2SD1267 (Emitter open)


    Original     		2002/95/EC) 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A PDF

    te 1819

    Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
    Text: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =


    OCR Scan     		2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 PDF

    2SD1267

    Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
    Text: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290


    OCR Scan     		2SD1267 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1279 SC-62 2SD1280 2SD1267 2SD1267A 2SD1271 2SD1273 2SD1273A 2SD1274 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SD1267, 2SD1267A 2SD1267, 2SD1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U n it ! m m 4 .4 m a x . • Features 2.9max. • High DC current gain hFE and good linearity


    OCR Scan     		2SD1267, 2SD1267A 2SB942, 2SB942A 2SD1267 PDF

    J300B

    Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector
    Text: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e


    OCR Scan     		2SD1267, 2SD1267A 2SB942, 2SB942A 2SD1267 J300B 2SB942 2SB942A 2SD12 2SD1267A 400Collector PDF