2SC4209
Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25
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2SC4209
OT-23
2SC4209
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Untitled
Abstract: No abstract text available
Text: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80
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2SA1620
2SC4209
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Untitled
Abstract: No abstract text available
Text: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SC4209
2SA1620
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2SA1620
Abstract: 2SC4209
Text: 2SA1620 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1620 ○ 励振段増幅用 ○ 電圧増幅用 • 単位: mm 2SC4209 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定
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2SA1620
2SC4209
O-236MOD
SC-59
2SA1620
2SC4209
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2SA1620
Abstract: 2SC4209
Text: 2SC4209 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4209 ○ 励振段増幅用 ○ 電圧増幅用 • 単位: mm 2SA1620 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定
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2SC4209
2SA1620
O-236MOD
SC-59
2SA1620
2SC4209
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2SA1620
Abstract: 2SC4209
Text: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80
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2SA1620
2SC4209
2SA1620
2SC4209
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2SA1620
Abstract: 2SC4209
Text: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SC4209
2SA1620
2SA1620
2SC4209
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Untitled
Abstract: No abstract text available
Text: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80
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2SA1620
2SC4209
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Untitled
Abstract: No abstract text available
Text: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80
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2SA1620
2SC4209
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2SC4209
Abstract: 2SA1620
Text: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage
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2SC4209
2SA1620
O-236MOD
SC-59
2SC4209
2SA1620
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2SA1620
Abstract: 2SC4209
Text: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage
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2SA1620
2SC4209
O-236MOD
SC-59
2SA1620
2SC4209
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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SSM3J307T
Abstract: SSM3J328R SSM3J334R
Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
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200-mA
BCE0030D
SSM3J307T
SSM3J328R
SSM3J334R
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Untitled
Abstract: No abstract text available
Text: 2SA1620 T O SH IB A 2 S A 1 620 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AU DIO FREQ U ENCY AM PLIFIER APPLICATIO N S + 0.5 2.5 - 0 .3 Complementary to 2SC4209 MAXIM UM RATINGS (Ta = + 0.25 1 .5 - 0 .1 5 , 25°C) SYMBOL CHARACTERISTIC
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2SA1620
2SC4209
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2SA1620
Abstract: 2SC4209
Text: TO SH IBA 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SA1620 I- MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4209
2SA1620
O-236MOD
SC-59
2SC4209
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • Complementary to 2SA1620 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
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2SC4209
2SA1620
961001EAA1
200mA
200mA,
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2SD1810
Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
Text: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5
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2SC4210
2SD596
2SC2618
2SD1328
2SC4209
2SD780A
1782K
2SC4209
2SD602A
2SD1810
2SD1111
2SD1694
2SC1280A
2SC3565
2SC4350
2SC4574
2SC2618
2SC3145
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2SA1620
Abstract: 2SC4209
Text: TOSHIBA 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • + 0.5 Complementary to 2SA1620 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4209
2SA1620
O-236MOD
SC-59
961001EAA1
2SA1620
2SC4209
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toshiba l40
Abstract: 2SA1620 2SC4209 A1620
Text: 2SA1620 TO SH IBA 2 S A 1 620 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SC4209 + 0.25 k 1-5 - ° - 15>i I- MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC
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2SA1620
2SC4209
O-236MOD
SC-59
toshiba l40
2SA1620
2SC4209
A1620
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2SA1620
Abstract: 2SC4209 A1620
Text: 2SA1620 TOSHIBA 2 S A 1 620 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS Complementary to 2SC4209 + 0.25 + 0.1 0.4-0.05 • + 0.5 2.5 - 0.3 1 i = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SA1620
2SC4209
O-236MOD
SC-59
961001EAA2'
2SA1620
2SC4209
A1620
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Untitled
Abstract: No abstract text available
Text: 2SA1620 SILICON PNP EPITAXIAL TYPE Unit in mm +0.5 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • Complementary to 2SC4209 Ta=25°C CHARACTERISTIC C o lle c to r-B a s e V o ltage C o lle c to r - E m itte r V o ltage E m itte r-B ase V oltage C o lle c to r C u rren t
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2SA1620
2SC4209
-50mA
-200mA
-200mA,
-20mA
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2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4401
2N4402
2N3904 331 transistor
C549 transistor
2SK1227
transistor 1201 1203 1205
transistor C549
transistor Hand book
2N5551 2SC1815 2SK246
2n4401 331
02CZ27
transistor 737
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SA1673
Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Text: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668
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2SA1615
2SA1615-Z
2SA1616
2SA1617
2SA1618
2SA1619
2SC4362
SC-59
2SA1655
2SC4363
SA1673
2SA1623
2SC4387
2sa161
2SA1616
2SA1670
2SA1671
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