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    onsemi 2SC3649T-TD-E

    TRANS NPN 160V 1.5A PCP
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    onsemi 2SC3649S-TD-E

    TRANS NPN 160V 1.5A PCP
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    onsemi 2SC3649S-TD-H

    TRANS NPN 160V 1.5A PCP
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    Flip Electronics 2SC3649S-TD-H

    TRANS NPN 160V 1.5A PCP
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    onsemi 2SC3649T-TD-H

    TRANS NPN 160V 1.5A PCP
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    2SC3649 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3649 Kexin High-Voltage Switching Applications Original PDF
    2SC3649 Sanyo Semiconductor High-voltage switching Original PDF
    2SC3649 Collmer Semiconductor High speed switching transistor Scan PDF
    2SC3649 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3649 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3649 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3649 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3649 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3649 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC3649 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SC3649 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SC3649R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3649R Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SC3649S Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3649S Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SC3649S-TD-E On Semiconductor 2SA1419 - 160V, 1.5A, NPN, Low Vce(sat) Bipolar Transistor, SOT89, hFE = 140-280 Original PDF
    2SC3649S-TD-H On Semiconductor 2SC3649S - Bipolar Transistor 160V 1.5A VCE(sat);450mV max. NPN Single PCP Original PDF
    2SC3649T Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3649T Sanyo Semiconductor PNP/NPN Epitaxial Planar Type Transistor Scan PDF
    2SC3649T-TD-E On Semiconductor 2SA1419 - 160V, 1.5A, NPN, Low Vce(sat) Bipolar Transistor, SOT89, hFE = 200-400 Original PDF

    2SC3649 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3649 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage


    Original
    PDF 2SC3649 500mA

    2SC3649

    Abstract: 2SA1419
    Text: 2SA1419 / 2SC3649 注文コード No. N 2 0 0 7 B 三洋半導体データシート 半導体ニューズ No.N2007A をさしかえてください。 2SA1419 / 2SC3649 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高耐圧スイッチング用


    Original
    PDF 2SA1419 2SC3649 N2007A 2SA1419 250mm2 100mA 2SC3649

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF 2SA1419 2SC3649 EN2007B 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


    Original
    PDF EN2007C 2SA1419/2SC3649 2SA1419 250mm2

    2SC3649

    Abstract: 2SA1419
    Text: Ordering number:EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Very small size making it easy to provide highdensity hybrid ICs.


    Original
    PDF EN2007A 2SA1419/2SC3649 2SA1419/2SC3649] 2SA1419 2SC3649 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    PDF 2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF EN2007B 2SA1419 2SC3649 2SA1419 250mm20

    2SC3649

    Abstract: ITR03571 ITR03572 2SA1419
    Text: Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide highdensity hybrid ICs.


    Original
    PDF ENN2007A 2SA1419/2SC3649 2SA1419/2SC3649] 25max 2SA1419 2SC3649 ITR03571 ITR03572 2SA1419

    2SC3649

    Abstract: 2SA1419 ITR03571 2SA141
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007B SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity.


    Original
    PDF 2SA1419 2SC3649 EN2007B 2SA1419 2SC3649 ITR03571 2SA141

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    PDF 2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419

    gummel

    Abstract: TRANSISTOR 1F 2SC3649
    Text: 2SC3649 SPICE PARAMETER SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 375.4f 200.8 BF 999.8m NF 4 VAF IKF 288.2m ISE 326.1f 1.479 NE 50 BR NR 1 VAR 49 IKR 30.00m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 500.0p 2


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    PDF 2SC3649 27deg gummel TRANSISTOR 1F 2SC3649

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    8C533

    Abstract: 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611
    Text: LOW-POWER SILICON NPN Item Number Part Number 5 10 2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 2SC1654 ~:8~~654N6 15 20 MM8C1654N6 2SC2910 2SC2230 2SC2383R MM8C1654N7 MM8C1654N7 JE5551A 8C533 ~~g~~:~ 25 30 2SC3645R JE5551 8SR19A A


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    PDF 2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 8C533 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


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    PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    C3649

    Abstract: CQ 419 2007a 2SA1419 2SC3649 SC3649 2SA419
    Text: Ordering number: EN 2007A 2SA1419/2SC3649 PNP/NPN Epitaxial Planar Silicon Transistors H igh-V oltage Sw itching A pplications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs


    OCR Scan
    PDF 2SA1419/2SC3649 2SA1419 C3649 CQ 419 2007a 2SC3649 SC3649 2SA419

    2007A

    Abstract: 2sc3649
    Text: Ordering number : EN 2 0 0 7 A J SA\YOI J r / 2SA1419/2SC3649 No.2007A PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity . Very small size making it easy to provide high-density hybrid ICs


    OCR Scan
    PDF 2SA1419/2SC3649 2SA1419 250inm2x0 250mmzx0 2007A 2sc3649

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


    OCR Scan
    PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062

    2SD157

    Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
    Text: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589


    OCR Scan
    PDF 2SD1592 2SD1141 2SD1446 2SD1237L 2SC3692 2SD1271A 2SD1833 2SD1668 2SD1271 2SD157 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239

    28C3320

    Abstract: 2SC3316 2SC2625 Transistor 2sc2246 2S092 25C3551 2SC2642 2sd920 2SC2666 2sc3033
    Text: COUM ER SEMICONDUCTOR 14368 PROTON ROAD DALLAS. TEXAS 75244 «M 2H 251 E 214-233-1589 High speed switching transistors • S u ita b le fo r S O k H z c ia « tw itching regulator». • A llo w s transform ers t o b e reduced In sire. Dovlca typa Veto Veto


    OCR Scan
    PDF 50kHz 2SC2929 T0220AB 2SC2767 T0-220AB 2SC2243 2SC2642 2SC2624 2SC2769 28C3320 2SC3316 2SC2625 Transistor 2sc2246 2S092 25C3551 2sd920 2SC2666 2sc3033

    transistor b985

    Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
    Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.


    OCR Scan
    PDF 250mm! 2SA1882/2SC4984 2SB1118/2SD1618 2SB1119/2SD1619 2SB1120 2SD1620 2SB1121/2SD1621 2SB1122/2SD1622 2SB1123/2SD1623 2SB1124/2SD1624 transistor b985 transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


    OCR Scan
    PDF TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


    OCR Scan
    PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155

    2SA1410

    Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
    Text: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40


    OCR Scan
    PDF 2SA1407 2SA1408 2SA1409 2SA1410 2SC3668 2-7D101A) 2SA1428 2SC3669 2SA1429 2-7D101A 2SA1441 HV COB 2SA1408 2SA1412 2SA1412-Z 2SA1413