Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB932 Search Results

    2SB932 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB932 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB932 Panasonic PNP Transistor Original PDF
    2SB932 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB932 TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB932 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB932 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB932 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB932 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB932 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB932 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB932 Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Scan PDF

    2SB932 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB932 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SB932 O-252

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1255 Silicon NPN epitaxial planar type 3.4±0.3 8.5±0.2 For power switching Complementary to 2SB932 1.0±0.1 M Di ain sc te on na tin nc ue e/ d 1.5±0.1 10.0±0.3 6.0±0.5 • Features 2.0 2.54±0.3 5.08±0.5 ea s ht e v tp is :// it


    Original     		PDF 2SD1255 2SB932

    2SB932

    Abstract: 2SD1255
    Text: Power Transistors 2SD1255 Silicon NPN epitaxial planar type 3.4±0.3 8.5±0.2 For power switching Complementary to 2SB932 1.0±0.1 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current


    Original     		PDF 2SD1255 2SB932 2SB932 2SD1255

    2SB0932

    Abstract: 2SB932
    Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 6.0±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB0932 2SB932) 2SB0932 2SB932

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)


    Original     		PDF 2SB0932 2SB932)

    2SB0932

    Abstract: 2SB932 3004 IC
    Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO


    Original     		PDF 2SB0932 2SB932) 2SB0932 2SB932 3004 IC

    2SB0932

    Abstract: 2SB932 2SD1255
    Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current


    Original     		PDF 2SB0932 2SB932) 2SB0932 2SB932 2SD1255

    2SB932

    Abstract: 2SD1255
    Text: Power Transistors 2SB932 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –4


    Original     		PDF 2SB932 2SB932 2SD1255

    2SB932

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB932 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-emitter saturation voltage VCE sat . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127


    Original     		PDF 2SB932 O-252 -10mA, 2SB932

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB0932 2SB932 Silicon PNP epitaxial planar type For Power switching Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 10.0±0.3 1.5±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB0932 2SB932)

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


    Original     		PDF MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    2SB932

    Abstract: 2SD1255
    Text: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching C om plem entary Pair w ith 2SB932 ■ Features • Low collector-emitter saturation voltage V cf mj • Good linearity of DC current gain (hn.)


    OCR Scan     		PDF 2SD1255 2SB932 2SD1253/A) bT32652 2SB932 2SD1255

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB932 2SB932 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1255 Unit ! mm • Features 8.7 max. • L ow co lle cto r-e m itte r satu ration voltage V ceim» 6.5 max. I» "I 3.7 max. F— -


    OCR Scan     		PDF 2SB932 2SD1255 i3E65E

    PNP 157A

    Abstract: 2SB932 2SD1255 hi-ki J3010 IB-015
    Text: Power T ransistors 2SB932 2SB932 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1255 • Features Unit ! mm , • G o o d lin e a rity of D C c u r re n t gain 3.7 max. 8.7 max. • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e CVceimd


    OCR Scan     		PDF 2SB932 2SD1255 JH-10i 2SB930/A) PNP 157A 2SB932 2SD1255 hi-ki J3010 IB-015

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


    OCR Scan     		PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


    OCR Scan     		PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


    OCR Scan     		PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SC4714

    Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F


    OCR Scan     		PDF O-126 D52SK, O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SA1817 2SD1539 2SA1605 2SC2258 2SC3063 2SC3942 2SC3945 2SC4717

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


    OCR Scan     		PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A