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    2SB930 Search Results

    2SB930 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB930 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB930 Panasonic PNP Transistor Original PDF
    2SB930 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB930 TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB930 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB930 Unknown Cross Reference Datasheet Scan PDF
    2SB930 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB930 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB930 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB930 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB930 Panasonic Silicon Medium Power Transistors Scan PDF
    2SB930A Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SB930A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB930A) Panasonic PNP Transistor Original PDF
    2SB930A TY Semiconductor Silicon PNP Epitaxial Planar Type - TO-252 Original PDF
    2SB930A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB930A Unknown Cross Reference Datasheet Scan PDF
    2SB930A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB930A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB930A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SB930 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB930 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .


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    PDF 2SB930 O-252

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB930 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SB930 O-252

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A


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    PDF 2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A


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    PDF 2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930

    2SD1253

    Abstract: 2SD1253A 2SB930 2SB930A DSA003717
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB930 and 2SB930A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 5 V Peak collector current ICP


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    PDF 2SD1253, 2SD1253A 2SB930 2SB930A 2SD1253 2SD1253 2SD1253A 2SB930A DSA003717

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit


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    PDF 2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    Untitled

    Abstract: No abstract text available
    Text: 2SB930R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400ux @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4


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    PDF 2SB930R Freq20MÃ

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB0930 2SB930 , 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A −60 V Collector-emitter voltage 2SB0930 (Base open) 2SB0930A


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    PDF 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB930A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low collector-emitter saturation voltage VCE sat .


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    PDF 2SB930A O-252

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB0930, 2SB0930A 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 –60 –5 V ICP –8 A Collector current IC –4 A Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Collector cutoff


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    PDF 2SB0930, 2SB0930A 2SB930, 2SB930A) 2SB0930 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    2SB930A

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB930A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


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    PDF 2SB930A O-252 2SB930A

    2SB930

    Abstract: 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 Emitter to base voltage VEBO –5 V Peak collector current ICP –8 A Collector current IC –4 A Collector power TC=25°C dissipation Junction temperature Tj


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    PDF 2SB930, 2SB930A 2SB930 2SB930 2SB930A 2SD1253 2SD1253A

    2SB0930

    Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
    Text: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0930 2SB930 and 2SB0930A (2SB930A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage


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    PDF 2SD1253, 2SD1253A 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BD149

    Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25


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    PDF MJE800T 2N6296 MJE2481 MJE2483 2N3054A 2SD1092 2SD777 2SB604 2SD570 BD149 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 2SD5260 idb596

    2SB930

    Abstract: 2SB930A 2SD1253 2SD1253A
    Text: Power T ransistors 2SB930, 2SB930A 2SB930, 2SB930A Silicon P N P Epitaxial P lanar Type Package Dimensions Pow er Am plifier C om plem entary Pair with 2 S D 1 2 5 3 , 2 S D 1 2 5 3 A Unit ! mm • Features 8,7 • High DC cu rren t gain hFE and good linearity


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    PDF 2SB930, 2SB930A 2SD1253, 2SD1253A 2SB930 2SB930A 2SD1253 2SD1253A

    panasonic 2SD

    Abstract: 930a STK CLASS D amplifier panasonic 2SB stk power amplifier ic 2sb 55
    Text: Power T ransistors 2SB930, 2SB930A 2SB930, 2SB930A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1253, 2SD 1253A Unit ! 3.7m ax. 8.7 max. • Features • High DC current gain Iife f— * l.^tnax. € .5 max.


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    PDF 2SB930, 2SB930A 2SB93o, panasonic 2SD 930a STK CLASS D amplifier panasonic 2SB stk power amplifier ic 2sb 55

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1253, 2SD1253A 2SD1253, 2SD1253A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB930, 2SB930A • Features U nit ! mm 8.7 3.7max. max. 1.1 max 6 .5 m a x . • High DC c u rre n t gain Iife and good linearity


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    PDF 2SD1253, 2SD1253A 2SB930, 2SB930A 2SD1253

    2SD1539

    Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
    Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5


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    PDF O-126 O-202 T0-220 O-220F 2SA1605 2SC2258 2SC3063 2SC2923 2SC4714 2SC3942 2SD1539 d53 pnp transistor 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


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    PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    K 2411

    Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
    Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type


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    PDF 3SK241 T0220F K 2411 k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019

    2SB0774

    Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)


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    PDF O-126 2SC2258 2SC3063 2SC5340 O-202 T0-220 O-220F 2SC2923 2SC4714 2SC3942 2SB0774 2SA2004 2SB160 2SB642

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


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    PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A

    2SB935

    Abstract: 2SB935A
    Text: Power Transistors 2SB935, 2SB935A 2SB935, 2SB935A S ilicon P N P E p ita x ia l P la n a r Type Package Dimensions Low Voltage Switching Unit ! mm • Features 2SB935 Collectorbase voltage 2SB935A 2SB935 Collectoremitter voltage 2SB935A Emitter-base voltage ,s


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    PDF 2SB935, 2SB935A 2SB935 2SB935A 2SB930/A)