2SB767 Search Results

2SB767

Abstract: 2SD875 transistor marking CS
Contextual Info: Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 • Features 3

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1

Contextual Info: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 0.4±0.08 1.5±0.1 Parameter Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter 45° +0.1

Contextual Info: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistors 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 V Collector-emitter voltage (Base open)

marking CQ

Abstract: 2SB767 Collector-base voltage -80 V Collector-emitter voltage -80 V Emitter-base voltage -5 V
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB767 Features Large collector power dissipation PC High collector-emitter voltage Base open VCEO Mini type package, allowing downsizing of the equipment and automatic Absolute Maximum Ratings Ta = 25

Contextual Info: SMD Type Product specification 2SB767 Features Large collector power dissipation PC High collector-emitter voltage Base open VCEO Mini type package, allowing downsizing of the equipment and automatic Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 For low-frequency output amplification Complementary to 2SD0875 (2SD875) 1.6±0.2 3 2 0.5±0.08 1.0+0.1 –0.2 1

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 0.4±0.08 1.5±0.1 Rating Unit VCBO −80 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −5 V Peak collector current

2SD875

Abstract: 2SB767
Contextual Info: Transistor 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB767 Unit: mm 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings 2.5±0.1 0.4±0.04 3.0±0.15 Ta=25˚C 3 * +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818