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    2SA168 Search Results

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    2SA168 Price and Stock

    Rochester Electronics LLC 2SA1689E-AA

    2SA1689 - SMALL SIGNAL BIPOLAR T
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    DigiKey 2SA1689E-AA Bulk 13,500 1,268
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    Toshiba America Electronic Components 2SA1680,F(J

    TRANS PNP 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SA1680(F,M)

    TRANS PNP 50V 2A TO92MOD
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    Toshiba America Electronic Components 2SA1680,T6F(J

    TRANS PNP 50V 2A TO92MOD
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    Rochester Electronics LLC 2SA1689E-HM-AA

    BIP PNP 50MA 300V
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    DigiKey 2SA1689E-HM-AA Bulk 1,268
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    2SA168 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA168 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA168 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA168 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA168 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA168 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1680 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4408 Original PDF
    2SA1680 Various Russian Datasheets Transistor Original PDF
    2SA1680 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1680 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1680 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1680 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1680 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1680 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1680 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1680 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1680 Toshiba Transistor - PCT Process Scan PDF
    2SA1680 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1680,F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680,T6ASTIF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF
    2SA1680,T6F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3 Original PDF

    2SA168 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1680

    Abstract: 2SA1680 2SC4408
    Text: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		PDF 2SA1680 2SC4408 O-92MOD 20070701-JA A1680 2SA1680 2SC4408

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic Cre : 1.5pF typ . 0.55 Small reverse transfer capacitance and excellent high


    Original     		PDF 2SA1682 OT-23 -10mA

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408.

    Untitled

    Abstract: No abstract text available
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 SC-62

    ENN3011

    Abstract: No abstract text available
    Text: Ordering number:ENN3011 PNP Epitaxial Planar Silicon Transistors 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).


    Original     		PDF ENN3011 2SA1682 VCEO300V) 2018B 2SA1682] ENN3011

    2SA1689

    Abstract: ITR04154 ITR04155 ITR04156 ITR04157
    Text: Ordering number:ENN3233 PNP Epitaxial Planar Silicon Transistors 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 5.0 • High breakdown voltage. · Small reverse transfer capacitance and excellent high


    Original     		PDF ENN3233 2SA1689 2003B 2SA1689] SC-43 2SA1689 ITR04154 ITR04155 ITR04156 ITR04157

    transistor A1680

    Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR

    N3013

    Abstract: 2SA1687 2SC4446 ITR04116 ITR04117 ITR04119
    Text: 注文コード No. N 3 0 1 3 2SA1687/2SC4446 No. N3013 20800 2SA1687 / 2SC4446 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 低周波一般増幅用 ・超小型パッケージのためセットの小型化、薄型化が可能である。


    Original     		PDF 2SA1687/2SC4446 N3013 2SA1687 2SC4446 2SA1687 ITR04130 ITR04128 N3013 2SC4446 ITR04116 ITR04117 ITR04119

    2SA1688

    Abstract: L21M ITR04133 ITR04134 ITR04135 ITR04136 ITR04137 ITR04138 2SA1256 GFE10
    Text: 注文コード No. N 2 7 9 8 A 2SA1688 No. N 2 7 9 8 A 20400 半導体ニューズ No.2798 とさしかえてください。 2SA1688 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用。


    Original     		PDF 2SA1688 100MHz ITR04149 ITR04151 ITR04152 ITR04153 2SA1688 L21M ITR04133 ITR04134 ITR04135 ITR04136 ITR04137 ITR04138 2SA1256 GFE10

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680

    transistor smd marking KA

    Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
    Text: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681


    Original     		PDF 2SC4409 500ns 2SA1681 100mA transistor smd marking KA Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF

    transistor smd marking CS

    Abstract: 2SA1682
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic Cre : 1.5pF typ . 0.55 Small reverse transfer capacitance and excellent high


    Original     		PDF 2SA1682 OT-23 -10mA transistor smd marking CS 2SA1682

    2SA1681

    Abstract: 2SC4409
    Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · High speed switching time: tstg = 300 ns (typ.)


    Original     		PDF 2SA1681 2SC4409 2SA1681 2SC4409

    2SA1683

    Abstract: EN3012
    Text: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


    Original     		PDF EN3012 2SA1683/2SC4414 2SA1683/2SC4414] 2SA1683 2SA1683 EN3012

    LED display module

    Abstract: No abstract text available
    Text: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 LED display module

    2SA1689

    Abstract: No abstract text available
    Text: Ordering num ber:EN 3 2 3 3 No.3233 _ 2SA1689 PN P E pitaxial P lan ar Silicon T ransistor TV Camera Deflection, High-Voltage Driver Applications F e a tu re s • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic


    OCR Scan     		PDF 2SA1689

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1 .6M AX. —J- - 4.6M A X. 1.7M AX. i _E Low Saturation Voltage : V qe (sat)= -0.5V (Max.)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409

    2SA168

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1681 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 6 81 Unit in mm PO W ER SWITCHING APPLICATIONS l.GMAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0M ±0.05 : V ç e ($at)~ —0.5V (Max.) 5 ÍTn = _1 Ai'


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 100mA --10m --30m. --100m --300m 2SA168

    2sd444

    Abstract: 2SD44 1SA16
    Text: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product


    OCR Scan     		PDF 2SA1685, 2SC4443 2SA1685 2sd444 2SD44 1SA16

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR SEE CORP 2SA1687, 2SC4446 7=H707b D Q0Q75T7 T T -29-/5 # P N P /N PN Epitaxial Planar Silicon Transistors 2 059 Low<Frequency General-Purpose Amp Applications High V iEBO 3013 F e a tu re s . V ery sm all-sized package p erm ittin g th e 2SA1687/2SC4446-applied sets to be m ade sm all a n d slim


    OCR Scan     		PDF 2SA1687, 2SC4446 H707b Q0Q75T7 2SA1687/2SC4446-applied 2SA1687

    2SA1681

    Abstract: 2SC4409 A1681
    Text: TO SH IBA 2SA1681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 681 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 ±0.05 : V q ^ (sat)“ —0.5V (Max.) (IC = —1A)


    OCR Scan     		PDF 2SA1681 300ns 2SC4409 2SA1681 2SC4409 A1681

    pa 2030a

    Abstract: 2SA1682
    Text: SANYO SEMICONDUCTOR S5E CORP D 7 cH 7 Q 7 t i O O 07 □ E ñ S 2SA1682 r - 5 /- /7 P N P Epitaxial P ia n a r S ilico n T ran sis to r 2018A TV Camera Deflection, High-Voltage Driver Applications 3011 F e a tu re s . H igh breakdow n voltage V q eo —300V


    OCR Scan     		PDF 00Q702Ã 2SA1682 T-31-/7 pa 2030a 2SA1682

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3 2 3 3 _ 2SA1689 N o.3233 P N P Epitaxial Planar Silicon Transistor SA\YO TV Camera Deflection, High-Voltage Driver Applications Features • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic


    OCR Scan     		PDF 2SA1689 0269M0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )


    OCR Scan     		PDF 2SA1680 2SA1680) 900mW 300ns 2SC4408. O-92MOD 2SA1680