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    2SA1451 Price and Stock

    Toshiba America Electronic Components 2SA1451A-Y(F)

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    Quest Components 2SA1451A-Y(F) 639
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    2SA1451 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1451 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1451 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1451 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1451 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1451 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1451 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1451 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1451 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1451 Toshiba TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) Scan PDF
    2SA1451(A) Unknown Silicon PNP Transistor Scan PDF
    2SA1451A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1451A Toshiba Silicon PNP epitaxial type transistor for high speed, high current switching applications Scan PDF
    2SA1451A Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1451A-O Toshiba 2SA1451 - TRANSISTOR 12 A, 50 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power Original PDF
    2SA1451AO Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1451A-O(F) Toshiba 2SA1451 - TRANS PNP 50V 12A 2-10R1A Original PDF
    2SA1451A-Y Toshiba 2SA1451 - TRANSISTOR 12 A, 50 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power Original PDF
    2SA1451AY Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1451A-Y(F) Toshiba 2SA1451 - TRANS PNP 50V 12A 2-10R1A Original PDF
    2SA1451-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SA1451 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3709

    Abstract: 2SA1451 pnp hfe 120-240
    Text: JMnic Product Specification 2SA1451 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3709 APPLICATIONS ・High current switching applications PINNING


    Original     		PDF 2SA1451 O-220Fa 2SC3709 VCC-30V 2SC3709 2SA1451 pnp hfe 120-240

    C3709A

    Abstract: 2SA1451A 2SC3709A
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A


    Original     		PDF 2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A

    a1451a

    Abstract: 2SA1451A A1451 2SC3709A
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		PDF 2SA1451A 2SC3709A a1451a 2SA1451A A1451 2SC3709A

    2SA1451

    Abstract: 2SC3709
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1451 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3709 APPLICATIONS


    Original     		PDF 2SA1451 2SC3709 2SA1451 2SC3709

    a1451a

    Abstract: No abstract text available
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		PDF 2SA1451A 2SC3709A 2-10R1A a1451a

    2SA1451

    Abstract: 2SC3709
    Text: SavantIC Semiconductor Product Specification 2SA1451 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3709 APPLICATIONS ·High current switching applications


    Original     		PDF 2SA1451 O-220Fa 2SC3709 2SA1451 2SC3709

    C3709A

    Abstract: 2SA1451A 2SC3709A C3709
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A


    Original     		PDF 2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A C3709

    C3709A

    Abstract: No abstract text available
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A


    Original     		PDF 2SC3709A 2SA1451A 2-10R1A C3709A

    a1451a

    Abstract: 2SA1451A 2SC3709A
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1451A 2SC3709A a1451a 2SA1451A 2SC3709A

    2SA1451

    Abstract: 2SC3709
    Text: Inchange Semiconductor Product Specification 2SA1451 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3709 APPLICATIONS ·High current switching applications


    Original     		PDF 2SA1451 O-220Fa 2SC3709 VCC-30V 2SA1451 2SC3709

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1451A T O SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage • V q e (sat)“ —0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tgtg^l.O^siTyp.)


    OCR Scan     		PDF 2SA1451A 2SC3709A

    2SA1451A

    Abstract: 2SC3709A
    Text: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1451A


    OCR Scan     		PDF 2SC3709A 2SA1451A 2SA1451A 2SC3709A

    2SA1451A

    Abstract: 2SC3709A
    Text: TO SHIBA 2SA1451A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1451A INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I q r = 2 '^ " 0 -6 A )


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451A 2SC3709A

    2SA1451

    Abstract: No abstract text available
    Text: 2SA1451 SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v C E (sa t)= - 0 .4 V (Max.) (at I c = - 6 A ) • High Speed Switching Time : tgtg = 1.0,«s (Typ.)


    OCR Scan     		PDF 2SA1451 2SC3709. 2-10L1A 2SA1451

    2SA1451

    Abstract: 2SC3709
    Text: AOK AOK Semiconductor P ro d u c t S pecification 2SA1451 S ilico n PNP Pow er T ransistors D E S C R IP T IO N • W ith TD -220F a package • L o w collector saturation voltage • H igh speed sw itching time • C om ple m e nt to type 2S C 3709 APP LIC A TIO N S


    OCR Scan     		PDF 2SA1451 O-22C 2SC3709 Tc-25

    WE VQE 11 E

    Abstract: 2SA1451A 2SC3709A
    Text: 2SC3709A TO SHIBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1451A


    OCR Scan     		PDF 2SC3709A 2SA1451A WE VQE 11 E 2SA1451A 2SC3709A

    2SA1451

    Abstract: 2SA1451A 2SC3709A
    Text: TO SH IBA 2SA1451A SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS M AXIM UM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A

    2SC3709

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3709 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in ron FEATURES: . Low Collector Saturation Voltage : VcE sat =0.4V(Max.) (at Ic=6A) . High Speed Switching Time : tstg=l.OMs(Typ.) . Complementary to 2SA1451


    OCR Scan     		PDF 2SC3709 2SA1451 2SC3709

    2SA1451

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL T Y P E 2SA1451 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mrr, FEATURES: . Low Collector Saturation Voltage > 3.2 ± 0.2 •• VCE sat =-0.4V(Max.) (at Ic=-6A) \fA . High Speed Switching Time : tstg=1.0iis(Typ.)


    OCR Scan     		PDF 2SA1451 2SC3709 2SA1451

    2SA1451

    Abstract: 2SA1451A 2SC3709A
    Text: 2SA1451A TO S H IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • IN D U STRIA L APPLICATIONS U nit in mm Low Collector Saturation Voltage 10 ±0.3 : V CE (sa t)= - 0 .4 V (Max.) (at I c = —6A)


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)


    OCR Scan     		PDF 2SC3709A 2SA1451A

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


    OCR Scan     		PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A