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Toshiba America Electronic Components 2SA1451A-Y(F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA1451A-Y(F)		639			1 $2.484 10 $2.484 100 $2.484 1000 $1.0247 10000 $1.0247	Buy Now
Toshiba America Electronic Components 2SA1451A-Y
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA1451A-Y		125			1 $21.192 10 $21.192 100 $18.0132 1000 $16.9536 10000 $16.9536	Buy Now

2SA1451A Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1451(A)	Unknown	Silicon PNP Transistor	Scan	PDF
2SA1451A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1451A	Toshiba	Silicon PNP epitaxial type transistor for high speed, high current switching applications	Scan	PDF
2SA1451A	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF
2SA1451A-O	Toshiba	2SA1451 - TRANSISTOR 12 A, 50 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF
2SA1451AO	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF
2SA1451A-O(F)	Toshiba	2SA1451 - TRANS PNP 50V 12A 2-10R1A	Original	PDF
2SA1451A-Y	Toshiba	2SA1451 - TRANSISTOR 12 A, 50 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF
2SA1451AY	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF
2SA1451A-Y(F)	Toshiba	2SA1451 - TRANS PNP 50V 12A 2-10R1A	Original	PDF

2SA1451A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C3709A Abstract: 2SA1451A 2SC3709A Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A	Original	2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A	PDF
a1451a Abstract: 2SA1451A A1451 2SC3709A Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)	Original	2SA1451A 2SC3709A a1451a 2SA1451A A1451 2SC3709A	PDF
a1451a Abstract: No abstract text available Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)	Original	2SA1451A 2SC3709A 2-10R1A a1451a	PDF
C3709A Abstract: 2SA1451A 2SC3709A C3709 Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A	Original	2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A C3709	PDF
C3709A Abstract: No abstract text available Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A	Original	2SC3709A 2SA1451A 2-10R1A C3709A	PDF
a1451a Abstract: 2SA1451A 2SC3709A Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)	Original	2SA1451A 2SC3709A a1451a 2SA1451A 2SC3709A	PDF
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1451A T O SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage • V q e (sat)“ —0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tgtg^l.O^siTyp.)	OCR Scan	2SA1451A 2SC3709A	PDF
2SA1451A Abstract: 2SC3709A Text: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1451A	OCR Scan	2SC3709A 2SA1451A 2SA1451A 2SC3709A	PDF
2SA1451A Abstract: 2SC3709A Text: TO SHIBA 2SA1451A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1451A INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I q r = 2 '^ " 0 -6 A )	OCR Scan	2SA1451A 2SC3709A 2SA1451A 2SC3709A	PDF
2SA1451 Abstract: 2SA1451A 2SC3709A Text: TO SH IBA 2SA1451A 2 S A 1 451 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage 10 ±0.3 . , .x— n a \ t t^ , —	OCR Scan	2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A	PDF
WE VQE 11 E Abstract: 2SA1451A 2SC3709A Text: 2SC3709A TO SHIBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1451A	OCR Scan	2SC3709A 2SA1451A WE VQE 11 E 2SA1451A 2SC3709A	PDF
2SA1451 Abstract: 2SA1451A 2SC3709A Text: TO SH IBA 2SA1451A SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS M AXIM UM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A	PDF
2SA1451 Abstract: 2SA1451A 2SC3709A Text: 2SA1451A TO S H IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • IN D U STRIA L APPLICATIONS U nit in mm Low Collector Saturation Voltage 10 ±0.3 : V CE (sa t)= - 0 .4 V (Max.) (at I c = —6A)	OCR Scan	2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A	PDF
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)	OCR Scan	2SC3709A 2SA1451A	PDF
2SA1451A Abstract: 2SC3709A Text: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)	OCR Scan	2SC3709A 2SA1451A 2SA1451A 2SC3709A	PDF
Untitled Abstract: No abstract text available Text: 2SC3709A TOSHIBA 2SC3709A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : V qe (sat)= 0-4V (Max.) High Speed Switching Time : tstg=1.0(us (Typ.)	OCR Scan	2SC3709A 2SA1451A	PDF

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2SA1451A Price and Stock

Toshiba America Electronic Components 2SA1451A-Y(F)

Toshiba America Electronic Components 2SA1451A-Y

2SA1451A Datasheets (10)

2SA1451A Datasheets Context Search

C3709A

a1451a

a1451a

C3709A

C3709A

a1451a

2N7058

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2sC5200, 2SA1943

2SA1930 2sc5171

GT45F122

Untitled

2SA1451A

2SA1451A

2SA1451

WE VQE 11 E

2SA1451

2SA1451

Untitled

2SA1451A

Untitled