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    2SA1365 Search Results

    2SA1365 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1365 Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SA1365 Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1365 TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SA1365 Unknown PNP Transistor Scan PDF
    2SA1365 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1365 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1365 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1365 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1365 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1365 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1365AE Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1365AF Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1365AG Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF

    2SA1365 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    isahaya

    Abstract: 2SA1235 2SA1365 2SC3440 to-236
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce sat .


    Original     		PDF 2SA1365 2SA1235 2SC3440. 180MHz JEITASC-59 O-236 isahaya 2SA1365 2SC3440 to-236

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current.


    Original     		PDF OT-23

    marking AE

    Abstract: 2SA1365 SMD iC MARKING AE
    Text: Transistors IC SMD Type Silicon PNP Epitaxia 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current.


    Original     		PDF 2SA1365 OT-23 marking AE 2SA1365 SMD iC MARKING AE

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1365 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent linearity nof DC forward current gain. 0.4 3 Low collector to emitter saturation voltage. 1 High collector current. 0.55 Super mini package for easy mounting.


    Original     		PDF OT-23

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2


    Original     		PDF 2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SA1379

    Abstract: 2sa1333 2SA1372 2SA1354 2SA1397 2SA1335 2SA1311 2SA1326 2SC3340 2SA1349
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 120W 2SA1301 -160 -12A 150 100 -5 -1A 30* 500 (Tc=25ºC) 150W 2SA1302


    Original     		PDF 2SA1301 2SA1302 2SA1303 2SA1304 2SA1305 2SA1306 2SA1307 2SA1308 2SA1309 2SA1310 2SA1379 2sa1333 2SA1372 2SA1354 2SA1397 2SA1335 2SA1311 2SA1326 2SC3340 2SA1349

    Untitled

    Abstract: No abstract text available
    Text: 2SA1365 n > iS *# -?= > W ? % A-® h 7 *m i2 l =>> p n p ^ e 2SA 1365«. M it^ iT - T fe O í t » m e ! mm è < , V CE Sa t)* ?' J ' S < K i t . 2SC3440 t ^ > 7 ° V ;i ^ -0.25 0.5 ^ r ° 15 1.5 0 5+0 25 U-ö -0.15 ^ • f'È 6 fflt'& i t . 11 # * +?


    OCR Scan     		PDF 10-16-o06

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1365 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING Unit: mm » * +0-5 2-5 -0.3 designed with high collector current, small VcE sai).


    OCR Scan     		PDF 2SA1365 2SA1365 2SC3440. 180MHz Transistor hFE CLASSIFICATION Marking CE

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


    OCR Scan     		PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a

    2SA1163

    Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
    Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry


    OCR Scan     		PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018


    OCR Scan     		PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679

    2SB1545

    Abstract: 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709
    Text: - 40 - S s T y p e No. tt S Manuf. 2SA 1750 H 2SA 1751 H # 2SA 1752 H $ 2SA 1753 H if 2SA. 1755 ^ B ÍL 2SA 1757 . * h SANYO * S T O S HIBA # S NEC ï 3 HITACHI I ± I FUJITSU fâ T MATSUSHITA 2SA1156 2SA1110 2SA1383 2SA15 3 5 A m = MITSUBISHI 2SA1121 2SB970


    OCR Scan     		PDF 2SA1156 2SA1110 2SA1383 2SA1535A 2SA1535 2SA1182 2SA1464 2SA1121 2SB970 2SB1545 2SA1309 2SA1776 2sa1015 2SA170B 2sa1115 2SA1383 2SA1091 2Sa1744 2SB709

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SB1099

    Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
    Text: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118


    OCR Scan     		PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099

    2SB897

    Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
    Text: 73 - m % € Type No. Manuf. & .E SANYO 2S8 1459 in 2SB 1460 □— □— A 2SA1704 A 2SA1692 fé T 2SB 1464 fé T 2 SB 1467 = * / IH 2SB 1462 2SB 1468 2SB 1471 NEC B HITACHI ±L ± a FUJITSU fô T MATSUSHITA m M IT SU B ISH I □ — A ROHM 2SB1452 2SA1774


    OCR Scan     		PDF 2SA1709 2SA1704 2SB1434 2SA1692 2SB1117 2SB1452 2SA1832 2SA1836 2SA1774 2SB881 2SB897 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2SA933S

    Abstract: 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175
    Text: 27 - 55 € Type No. tt € Manuf. B SANYO TOSHIBA 2SA 1285 - H # 2SA1208 2SA1145 2SA 1285A H « 2SA1208 2SA1020 2 S A 1286 , H 2 S A 1287 J 2SA1770 * 2 S A 1288 2SA 1289 , 2 S A 1290 ✓ & T MATSUSHITA — A ROHM 2SA1124 2SA1282 2SA1124 2SB1212 2SB1068 2SB819


    OCR Scan     		PDF 2SA1285 2SA1285A 2SA1286 2SA1287J 2SA1288 2SA1289 2SA1208 2SA1770 2SA1145 2SA933S 2SB737 2SA1302 TOSHIBA 2sb1425 2SA1286H 2SA644 2SB873 2SA1782 2SA1757 2sa1175

    2SB694

    Abstract: Toshiba 2SB754 2Sb754 2SB927 2SA1225 2SA1243 2SA1241 2SB837B 2SA13 2SB1435
    Text: 54 - « m Type No. 2SB 8.27 „ 2SB 828 2SB 830 2SB 831 2SB 833 2SS 834 «2SB 835 tt € Manuf. h n =. n B Ä B 4 S 2 * 2 T 2SB 836 2SB 837 , 2SB 837L B B B 4 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 837S 838 839 840 . 841 , 841L 841S 842 843 B B tL 2SB 2SB 2SB


    OCR Scan     		PDF 2SB754 2SA1185 2SB849 2SB1155 2SA1789 2SB927 2SB1010 2SB815 2SA1298 2SB624 2SB694 Toshiba 2SB754 2Sb754 2SB927 2SA1225 2SA1243 2SA1241 2SB837B 2SA13 2SB1435

    2SC3928A

    Abstract: Transistor lss 2SC3728 2SC4357 2sc5211 8E sot-89 2SA1369 2SC5209 2sA1989
    Text: # High-Density mounting equipments Continued Max. ratings Type Mo. Application Sinicftff* Vo» ¥<»o LPA 2SA1948 LVA 2SA1989 * ★ LVA 2SC3052 LVA 2SC3053 FM.RF.CON IF Si.PNP.E -25 — 120 -120 Si.PNP.E -50 -50 50 Si.NPN.E Si.NPN.E 30 50 -4 -5 -6 - 1A -100


    OCR Scan     		PDF

    2sc3440

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3440 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3440 is a super mini silicon NPN epitaxial type transistor Unitmm OUTLINE DRAWING « +0-5 2-5 -0.3 designed with high collector current, small VcE(sat).


    OCR Scan     		PDF 2SC3440 2SC3440 2SA1365. 180MHz