2SA1077
Abstract: 2SC2527
Text: Inchange Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers
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2SA1077
O-220
2SC2527
O-220)
-120V;
10MHz
2SA1077
2SC2527
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Untitled
Abstract: No abstract text available
Text: 2SA1077 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA1077
Freq60M
time150nÃ
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2SA1077
Abstract: 2SC2527
Text: SavantIC Semiconductor Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2527 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers
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2SA1077
O-220
2SC2527
O-220)
-120V;
10MHz
2SA1077
2SC2527
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2SA1077
Abstract: 2SA107 2SC2527
Text: JMnic Product Specification 2SA1077 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2527 ・High transition frequency ・Excellent safe operating area APPLICATIONS ・High-frequency power amplifier ・Audio power amplifiers
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2SA1077
O-220
2SC2527
O-220)
-120V;
10MHz
2SA1077
2SA107
2SC2527
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Untitled
Abstract: No abstract text available
Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1077 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min.) • Fast Switching Speed • Wide Area of Safe Operation
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2SA1077
-120V
2SC2527
O-220C
-120V;
10MHz
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tip340
Abstract: 2sb705 nec BUW23 2sA747A sanken 2SA747A BUW32A B0246C 2SB705 BOX20 2SA747 sanken
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 35 40 >= 50 2SA747 2SA747 2SA878 2SA1067 2SA1040 TIP340 2SA1072 2SA1077 2~1:J10;j2K 55 60 2SB955K 2SA1007 2SA1232R 2SA1232Q 2SA1232P 2N6231 BOX20 BOX20 2SA747A ~~p~~1U6 65 70 2SB705 2SB863 2SA1265
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204AA
BUW32
2SC2818
SM216S
B0287
218var
tip340
2sb705 nec
BUW23
2sA747A sanken
2SA747A
BUW32A
B0246C
2SB705
BOX20
2SA747 sanken
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2SA1077
Abstract: 2SC2527
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2527 APPLICATIONS
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2SA1077
-120V
2SC2527
-120V;
10MHz
2SA1077
2SC2527
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2SC2527
Abstract: 2SA1077
Text: SavantIC Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1077 ·Fast switching speed ·Excellent safe operating area APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers
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2SC2527
O-220C
2SA1077
2SC2527
2SA1077
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2SC2527
Abstract: 2SA1077
Text: Inchange Semiconductor Product Specification 2SC2527 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SA1077 ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers
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2SC2527
O-220C
2SA1077
2SC2527
2SA1077
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2u 62 diode
Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20
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SDT3208
SDT7140
BDT95
BDT96
2u 62 diode
KT808A
diode 2U 81
kt808am
2N3076
2SD867Y
kt808
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2sa1046
Abstract: 2SA1023 2sa1023 equivalent 2SC2398 2SA1026 2sa1066 2SA1094 2SA1027 2SC2525 2SC2375
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1001 -130 -4.5 -8A 80W(Tc=25ºC) 150 100 -5 -500 40* 350
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2SA1001
2SA1002
2SA1003
1602SA1004
2SA1005
2SA1006
2SA1006A
2SA1006B
2SA1007
2SA1096
2sa1046
2SA1023
2sa1023 equivalent
2SC2398
2SA1026
2sa1066
2SA1094
2SA1027
2SC2525
2SC2375
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NPN transistor 2527
Abstract: 2SA1077 tf 011
Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1077 Septem ber 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 7 is silicon PNP general purpose, high pow er sw itching transistors fab ricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h n o lo g y. R E T
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2SA1077
2SA1077
50juA,
10MHz
300/is
NPN transistor 2527
tf 011
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HS 153 SP
Abstract: 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719
Text: - 22 - T a = 2 5 U *EP(iTc=25^ m z m g & VcBO (V) 2SA1077 VCEO (V) Ic(DO (A) (W) % m Pc* Pc & 14 (Ta=25^) , Ic BO »ÜB (V) Itili) W (V) ic/lE (A) [*EP(ítypí l / . . (V) (V) « le (A) Ib (A) SN Reg/DDC/LF PA -120 -120 -10 60 -50 -120 60 200 -5 -1 -1.8
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2SA1077
2SA1080
2SA1081
2SA1082
SA1063
150mV
O-92JB
2SA1137
2SC2676
2SA1138
HS 153 SP
2SA1152
2SA1154
2SA1115 G
2sc2681
2sc2720
2SA1138
2sa1151
2sc2592
2SC2719
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2SA1077
Abstract: AX50
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE 2SA1077 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S A 1 0 7 7 is silicon P NP general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T technology. R E T
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2SA1077
10MH2
AX50
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transistor rf type M 2530
Abstract: TRANSISTOR 2sA107 2SA107 T6M40F1 L38C 2SC2502 T10V40F1 T20M40F1 T3M40F1 T6V40F1
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SA107
2SA1075
2SA1076
2SA1077
2SA107Ã
2SA107!
transistor rf type M 2530
TRANSISTOR 2sA107
T6M40F1
L38C
2SC2502
T10V40F1
T20M40F1
T3M40F1
T6V40F1
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2SC2526
Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
Text: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R
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3iA97fa2
37MT7Ed5
2SC2530
2SA1080
O-220
FT1551
FT2551
2SC2528
2SA1078
2SC2526
2SA1075
2SA1076
2SA1250
2SC2428
2SC2431
2SC2530 to-3
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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