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    2N5305 Price and Stock

    Toshiba America Electronic Components 2N53055

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    Bristol Electronics 2N53055 300
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    ME 2N5305

    Bipolar Junction Transistor, Darlington, NPN Type, TO-98
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    Quest Components 2N5305 828
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    National Semiconductor Corporation 2N5305

    Bipolar Junction Transistor, Darlington, NPN Type, TO-98
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    Quest Components 2N5305 320
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    Others 2N5305

    Bipolar Junction Transistor, Darlington, NPN Type, TO-98
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    Quest Components 2N5305 40
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    UNKNOWN 2N5305

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    Component Electronics, Inc 2N5305 28
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    2N5305 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5305 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin Scan PDF
    2N5305 Allegro MicroSystems Bipolar transistor Scan PDF
    2N5305 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N5305 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5305 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5305 General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan PDF
    2N5305 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5305 Micro Electronics Semiconductor Devices Scan PDF
    2N5305 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5305 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5305 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5305 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5305 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5305 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5305 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5305 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5305 Unknown Transistor Replacements Scan PDF
    2N5305 National Semiconductor NPN Transistors / DARLINGTON Scan PDF
    2N5305 National Semiconductor NPN Transistors / DARLINGTON Scan PDF
    2N5305 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF

    2N5305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U8A TELEPHONE: 979 378-2992 (212) 227-8008 FAX: (979) 37*8980 Silicon Transistors 2N5305,6,6A absolute maximum ratings: (25°C) <unieMoth«rwi*«»p«cin>d) Collator to B*i« VcnQ 26 Collector to Emitter V«no


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    PDF 2N5305 -66to. -66to

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    MPS004

    Abstract: npn darlington motorola to92 k0221 HS5305 MPS-004 PMBTA14 PMBTA13
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BA CEO (V) Ie Max (A) Po Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max (I) tf Max (I) Tope, Max (Oe) Package Style Complimen Lary Darlington Pairs SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002


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    PDF SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002 2NS534 2NS535 2NS53S 2NS537 MPS004 npn darlington motorola to92 k0221 HS5305 MPS-004 PMBTA14 PMBTA13

    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


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    PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


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    PDF D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A

    53-06A

    Abstract: 2n5306 2N5305
    Text: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are


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    PDF 3fl75Dfll OG17c 2N5305, GES5305, S-42S27 10--Typical 53-06A 2n5306 2N5305

    MPSA14 MPSA64

    Abstract: GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE - 6 5 ° t o + 1 5 0 ° C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


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    PDF 2N5305 2N5306 2N5306A 2N5307 2N5308A GES5305 S5306 GES5306A To-126 0000S23 MPSA14 MPSA64 GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307

    2N5305

    Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
    Text: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are


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    PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


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    PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


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    PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    2N3877

    Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220

    2N4424

    Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220

    MT4104

    Abstract: BCW83 bc517 2n5306 to 92F
    Text: Miniature Transistors TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS Pd Ic VcEO mA (mW) (V) H fe min max Ic (mA) VcE (V) BC146 BC146R BC146Y BC146G BC200 N N N N P MT-42 MT-42 MT-42 MT-42 MT-42 50 50 50 50 50 50 50 50 50 50 20 20 20 20 20 80 80 140 280 50 550


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    PDF BC146 BC146R BC146Y BC146G BC200 BC200R BC200Y BC200G BCW83 CL151-4 MT4104 bc517 2n5306 to 92F

    Transistor C107m

    Abstract: t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008
    Text: "'ART VJMEEF INDEX Part No. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 1N4744 1N5225 1N5400 1N5401 1N5402 1N5404 1N5405 1N5625 1N750 2N0918 2N1770 2N1771 2N1772 2N1773 2N1774 2N1775 2N1776 2N1777 2N1778 2N1842 2N1843 2N1844 2N1845


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    PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 Transistor C107m t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008

    Q4015T

    Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
    Text: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe |ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50


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    PDF 2N0918 2N2221 2N2222A 2N3646 2N3692 2N3702 2N3706 2N3709 2N3903 2N3904 Q4015T NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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