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    GES6220 Search Results

    GES6220 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GES6220 General Electric Semiconductor Data Handbook 1977 Scan PDF
    GES6220 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GES6220 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    GES6220 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GES6220-J1 Central Semiconductor Small Signal Transistors Original PDF
    GES6220-J1 Central Semiconductor Small Signal Transistors TO-92HS Case Scan PDF

    GES6220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    PDF

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 GES6001 GES6002

    GES5307

    Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)


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    PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2n3901 equivalent 2N5232A

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


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    PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Text: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


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    PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308

    mhb 7001

    Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220

    ES5448

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 10m A V Min. 1 60 II 6040 • m 40 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 NPft GES5828 NP» GES6000 NM GES6001 m p GES6002 u n 40 40 25 25 25 GES6003 GES6004


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    PDF to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6222 ES5448 GES6220

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES60I GES6014, 2N3901 GES6001

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220

    ES5448

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE b v ceo Device Type @ 10m A V Min. 1I •I m V C E(sat) Max. @ lc(m A ) GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 60 60 40 40 40 00 00 60 00 «0 200 200 120 200 300 2 ■ M M


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5824 GES5825 ES5448 GES6001

    ERF 2030

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 -IN4I48 ERF 2030 GES6220

    2N4425

    Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306
    Text: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)


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    PDF O-92HS 2n3402 2n3403 2n3404 2n3405 2n4425 hs3402 hs3403 ges6015-j1 ges6016-j1 GES6220-J1 GES6220 HS5306

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2N3877

    Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220

    2N4424

    Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 1 0 m A V Min. 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 200 200 120 200 300 40 40 25 25 25 50 00 00 OB 500 800 300 300


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5447 GES6220 GES6001

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 60 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE ges6007 GES6001 GES6002

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    2N3404

    Abstract: 2N4425 2N3405 GES6220 GES6220-J1 HS5306 2N3402 2N3403 HS3402 HS3403
    Text: CENTRAL S E ilIC O N D U C T O R L.5E » • n flT T b B 0000777 ObO ■ CEN Small Signal Transistors TO-92HS Case Pd @Tc =25°C =1 .OWatt TYPE NO. POLARITY BVc b O BVC e o b v e b o 0 lc h FE 'CBO « v CBO VCE v C E (S i iT) ® <C c ob <T NF LEAD CODE


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    PDF O-92HS 2N3402 2N3403 2N3404 2N3405 2N4425 HS3402 HS3403 GES6221-J1 GES6220 GES6220-J1 HS5306

    2N4425

    Abstract: No abstract text available
    Text: Small signal Transistors TO-92HS Case P q @ T q =250C =1 .OWatt TYPE NO. p o l a r it y b v c b o b v c e 0 e v EBO «CBD >vCBO (V) 00 <V) (nA) MIN MW ium MAX » lC h FE e v CÊ VCE(SA T) ® fC C0|, *t NF LEAD CODE (V) (mA) MIN MAX 00 (V) (mA) MAX <pF> (MHz)


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    PDF O-92HS 2N3402 2N3403 2N3404 2N3405 2N4425 HS3402 HS3403 HS3404 HS3405

    2N5089 equivalent

    Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 GES5307

    mps 06

    Abstract: GES6220 MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516
    Text: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE DEVICE NPN V Ml N.-MAX. MPSA55 MPS A 56 MPS3702 MPS3703 60 80 60 80 25 30 30 30 20 30 30 25 25 40 40 40 25 40 40 30 40 40 30 25 25 60 60 80 80 40 40 25 25 MPS A05 MPSA06 MPS3704 MPS3705 MPS3706


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    PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 GES6220 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516

    ES5448

    Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 ES5448 GES6220

    GES5822

    Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v ceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007


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    PDF GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002