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Microchip Technology Inc 2N4877 POWER BJT
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Sabritec 2N4877 TRANSISTOR,BJT,NPN,60V V(BR)CEO,4A I(C),TO-39
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2N4877 Datasheets (32)

Part	Manufacturer	Description	Datasheet Type	PDF
2N4877	Central Semiconductor	Leaded Small Signal Transistor General Purpose	Original	PDF
2N4877	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package	Original	PDF
2N4877	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N4877	API Electronics	Short form transistor data	Short Form	PDF
2N4877	API Electronics	Short form transistor data	Short Form	PDF
2N4877	Central Semiconductor	NPN METAL CAN Transistors	Scan	PDF
2N4877	Central Semiconductor	NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch	Scan	PDF
2N4877	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF
2N4877	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N4877	General Diode	Transistor Selection Guide	Scan	PDF
2N4877	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N4877	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N4877	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N4877	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N4877	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N4877	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4877	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4877	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4877	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4877	Unknown	Transistor Replacements	Scan	PDF

2N4877 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)	Original	2N4877 O205AD) 19-Jun-02	PDF
2n4877 Abstract: No abstract text available Text: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)	Original	2N4877 O205AD) 17-Jul-02 2n4877	PDF
2N4877 Abstract: No abstract text available Text: 2N4877 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)	Original	2N4877 O205AD) 1-Aug-02 2N4877	PDF
2N4033 Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235 Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) TYP TYP TYP TYP TYP MAX MAX ICEO ICES ICEV ICER	Original	2N4030 2N4031 2N4032 2N4925 2N4926 2N4927 2N4928 2N4929 2N4033 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
Untitled Abstract: No abstract text available Text: 4 AMP NPN Sorted by IC, then VCEO Ratings based on 25˚C case temperature unless otherwise specified PT max IC max A VCEO max (V) hFE min hFE max @Ic (A) VCE(sat) max (V) @ IC (A) fT min (MHz) 2N5296 4 40 30 120 Note 1 1 Note 1 Note 1 36 TO-257 2N6121 4	Original	2N5296 O-257 2N6121 2N5202 2N3766 2N4877 2N5298 2N612	PDF
2n4889 Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556 Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M	Original		PDF
BSV12 Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252 Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) ICEO ICES ICEV ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) TYP TYP TYP TYP TYP	Original	2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252	PDF
bu808 equivalent Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143 Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200	Original	2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143	PDF
JANS2N5154 Abstract: 23302 JANS2N5154L Text: Micmsemi NPN Transistors Part Number I I I 2N5682 2N5321 2N5320 2N5786 2N5785 2N5784 2N4877 2N5152 2N5152L 2N5154 2N5154L JAN2N5152 JAN2N5152L JAN2N5154 JAN2N5154L JANS2N5152 JANS2N5152L JANS2N5154 JANS2N5154L JANTX2N5152 JANTX2N5152L JANTX2N5154 JANTX2N5154L	OCR Scan		PDF
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786	PDF
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5	OCR Scan	O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420	PDF
Untitled Abstract: No abstract text available Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419	OCR Scan	2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h =E VCEO v EBO 'CBO v CBO (V) (HA) (V) @ lc « VCE VCE(SA T) @ >C (mA) 00 (V) (V) (mA) ''C EO VCER T (MHz) Cob TYP NF (PF) •on (ns) •off (ns) (dB) TYP TYP TYP •TYP	OCR Scan	2N4030 2N4031 2N4032 2N4926 2N4927 2N4928 2N4929	PDF

2N4250 Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260 Text: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248	OCR Scan	2N4142 2N4143 2N4150 2N4207 T0106 2N4208 2N4209 2N4210 2N4227 2N4250 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260	PDF
2N4314 Abstract: 2N4033 2N4358 2N4890 transistor 2N4033 2N4030 2N4031 2N4032 2N4036 2N4037 Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h-E v CEO v EBO 'CBO v CBO (HA) (V) (V) (V) @ ic « vCE VCE(SA T) ® >C (mA) (V) 00 (mA) ''C EO VC ER NF »T (MHz) Cob <PF) ••on (ns) •off (ns) (dB) TYP TYP TYP •TYP	OCR Scan	2N4030 2N4031 2N4032 2N4033 2N4036 2N4897 2N4924 2N4925 2N4926 2N4927 2N4314 2N4358 2N4890 transistor 2N4033 2N4037	PDF
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C	PDF
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2n2301 Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö \| 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74	OCR Scan	2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815	PDF
Untitled Abstract: No abstract text available Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® C (V) (m A) >CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) TY P *TY P	OCR Scan	2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118	PDF
Untitled Abstract: No abstract text available Text: Ic = 3.0 AMPS DEVICE TYPE PACKAGE 2N1647 2N1648 2N1649 2N1650 T O -111 TO-111 TO-111 TO-111 80 80 80 80 80 120 80 120 6.0 6.0 6.0 6.0 20.0 20.0 20.0 20.0 15 15 30 30 - 45 45 90 90 0.5 0.5 0.5 0.5 10.0 10.0 10.0 10.0 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 0.1 0.1	OCR Scan	2N1647 2N1648 2N1649 2N1650 2N2101 2N2849 2N2849-1 2N2849-2 2N2850 2N2850-1	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
germanium transistor Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006 Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types	OCR Scan		PDF

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Microchip Technology Inc 2N4877

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2N4877 Datasheets (32)

2N4877 Datasheets Context Search

Untitled

2n4877

2N4877

2N4033

BUV48I

Untitled

2n4889

BSV12

bu808 equivalent

JANS2N5154

2N1479

Untitled

Untitled

Untitled

2N4250

2N4314

TRIAC 97A6

1N5438

la 4440 amplifier circuit diagram 300 watt

2n2301

Untitled

Untitled

JE1100

germanium transistor