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    Raytheon 2N1132LJAN

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    2N1132L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N1132L Microsemi BJT, PNP, Low Power Transistor, VCB0 50V, IC 0.6A Original PDF
    2N1132L Microsemi LOW POWER PNP SILICON TRANSISTOR Original PDF
    2N1132LJAN New England Semiconductor LOW POWER PNP SILICON TRANSISTOR Original PDF
    2N1132LJANTX New England Semiconductor LOW POWER PNP SILICON TRANSISTOR Original PDF

    2N1132L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1132

    Abstract: 2N1131 2N1131L 2N1132L
    Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1131L 2N1132L

    2N1132

    Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp
    Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131, 2N1311L, 2N1312L 2N1132 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp

    Untitled

    Abstract: No abstract text available
    Text: 2N1132L+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1132L Freq60M

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    2N1132

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131 2N1131L T4-LDS-0187 2N1132

    2N1131

    Abstract: 2n1132 6840
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICON TRANSISTOR


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L O-39nd 2N1132 2N1131L 6840

    2N1131

    Abstract: 2N1131L 2N1132 2N1132L tl 451 177G
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 July 2009. MIL-PRF-19500/177G 6 April 2009 SUPERSEDING MIL-PRF-19500/177F 4 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER


    Original     		PDF MIL-PRF-19500/177G MIL-PRF-19500/177F 2N1131, 2N1131L, 2N1132, 2N1132L, MIL-PRF-19500. 2N1131 2N1131L 2N1132 2N1132L tl 451 177G

    2n1131

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1131 2N1131L T4-LDS-0187

    2N1131

    Abstract: 2N1132 2N1131L 2N1132L MIL-PRF19500
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/177F 4 August 1999 SUPERSEDING MIL-S-19500/177E 8 February 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER


    Original     		PDF MIL-PRF-19500/177F MIL-S-19500/177E 2N1131, 2N1131L, 2N1132, 2N1132L, MIL-PRF-19500. 2N1131 2N1132 2N1131L 2N1132L MIL-PRF19500

    2n1131

    Abstract: 2N1132
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER PNP SILICONTRANSISTOR


    Original     		PDF MIL-PRF-19500/177 2N1131 2N1131L 2N1132 2N1132L 2N1132 2N1131L T4-LDS-0187