Untitled
Abstract: No abstract text available
Text: AWT6309 HELP2TM AWS/KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module Data Sheet - Rev 2.5 FEATURES • InGaP HBT Technology • High Efficiency: • 40 % @ +28 dBm output • 22 % @ +17 dBm output • Low Quiescent Current: 15 mA • Low Leakage Current in Shutdown Mode: <1 µA
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V/28dBm
AWT6309
AWT6309
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Untitled
Abstract: No abstract text available
Text: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +30 dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications Connectors SMA • communication systems • instrumentation
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28dBm
ZHL-4240
ZHL-4240
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9421
Abstract: FPD2250SOT89
Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB2250SOT89BB
FPD2250SOT89
900MHz
28dBm
39dBm
18dBm
300mA
FPD2250SOT89;
2250m
30mil
9421
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Solder Paste, Indium 5.1 AT
Abstract: No abstract text available
Text: RMPA2259 28dBm WCDMA Power Amplifier Module General Description Features The RMPA2259 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low power mode to reduce
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RMPA2259
28dBm
RMPA2259
Solder Paste, Indium 5.1 AT
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ECJ-1VB1H102K
Abstract: RMPA0966
Text: PRELIMINARY RMPA0966 i-Lo WCDMA Band V Power Amplifier Module tm Features General Description • 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA,
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RMPA0966
28dBm
ECJ-1VB1H102K
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Untitled
Abstract: No abstract text available
Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W
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FLM1213-12F
-45dBc
28dBm
FLM1213-12F
FCSI0598M200
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power rf
Abstract: No abstract text available
Text: FC7214 Future Communications Integrated circuit Inc. Power Amplifier Module for KPCS CDMA FEATURES resistance. FC7214 is manufactured with an advanced InGaP HBT MMIC process. l Single-mode operation up to 28dBm l Low quiescent current: 40mA l Optimized for a 50-Ω system
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FC7214
FC7214
50-ohm
28-dBm
power rf
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GRM1555C1HR50B
Abstract: LQG15HN12NJ02D rx193
Text: DRAFT RF3165 DRAFT RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω 28dBm Linear Output Power 42% Peak Linear Efficiency 28dB Linear Gain -41dBc ACLR @ ±5MHz
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RF31653V
1750MHZ
RF3165
16-Pin,
28dBm
-41dBc
DS061201
GRM1555C1HR50B
LQG15HN12NJ02D
rx193
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3g hsdpa signal Schematic Diagram
Abstract: LQG15HN12NJ02D
Text: RF3165 RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω 28dBm Linear Output Power 42% Peak Linear Efficiency 28dB Linear Gain -41dBc ACLR @ ±5MHz HSDPA Capable
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RF31653V
RF3165
1750MHZ
16-Pin,
28dBm
-41dBc
RF3165
DS061201
3g hsdpa signal Schematic Diagram
LQG15HN12NJ02D
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29-FUNCTION
Abstract: hdr1x8
Text: RF6559 RF65594.0V to 4.5V, 915MHz ISM BAND TRANSMIT/RECEIVE MODULE 4.0V TO 4.5V, 915MHZ ISM BAND TRANSMIT/RECEIVE MODULE Tx Output Power: 28dBm Tx Gain: 42dB Integrated Single Port Rx/Tx 50 Bi-directional Transceiver Interface LNA with Bypass Mode
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RF65594
915MHz
RF6559
28-pin,
28dBm
868MHz/915MHz
DS111208
29-FUNCTION
hdr1x8
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AWT6302
Abstract: No abstract text available
Text: AWT6302 PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 39% • Low Quiescent Current: 48 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V +2.75 V min over temp
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AWT6302
V/28dBm
AWT6302
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GTO MODULE
Abstract: ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8
Text: PRELIMINARY RMPA1766 i-Lo tm WCDMA Band IV Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28dBm Pout The RMPA1766 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA
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RMPA1766
28dBm
16dBm)
16dBm
GTO MODULE
ECJ-1VB1H102K
SN63
SN96
Solder Paste, Indium 5.8
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FLM1213-12F
Abstract: No abstract text available
Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-12F
-45dBc
28dBm
FLM1213-12F
FCSI0598M200
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AWT6112
Abstract: No abstract text available
Text: AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • • • • • • • InGaP HBT Technology High Efficiency: 49% AMPS, 38% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <5 µA
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AWT6112
V/28dBm
AWT6112
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AWT6112
Abstract: No abstract text available
Text: AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES InGaP HBT Technology High Efficiency: 54% AMPS, 38% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <5 mA
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AWT6112
AWT6112
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Untitled
Abstract: No abstract text available
Text: AWT6138 HELP PCS/CDMA 3.4V 28dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 40% at +28 dBm 22% at +16 dBm 15% at +7 dBm AW T • Low Quiescent Current: 16 mA • Low Leakage Current in Shutdown Mode: <1 µA
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AWT6138
28dBm
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Untitled
Abstract: No abstract text available
Text: AWT6271 HELP Cellular/WCDMA 3.4V/28dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 45 % @ POUT = +28 dBm 20 % @ POUT = +16 dBm AWT6271 15 % @ POUT = +7 dBm • Low Quiescent Current: 16 mA
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MSC 5518
Abstract: No abstract text available
Text: LX5518 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 dB 26dBm @3%EVM,802.11g/5V 24dBm @3.5%EVM,80211g/3.3V 28dBm @CCK,802.11b/5V
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LX5518
26dBm
11g/5V
24dBm
80211g/3
28dBm
11b/5V
27dBm
11b/3
28dBm/5V
MSC 5518
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Untitled
Abstract: No abstract text available
Text: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +38dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications • communication systems • instrumentation • satellite dist./GPS/PCS
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38dBm
28dBm
ZHL-4240
ZHL-4240
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Untitled
Abstract: No abstract text available
Text: R A -0011 AFONICS - InGaAs PIN/TIA - 1GHz minimum bandwidth - Differential output and AGC -R esp onsivit y ttypic ypic ally 3300 V/W Resp esponsivit onsivity ypically - Typic al sensitivit y -28dBm ypical sensitivity -M inimum o v er load -3dBm Minimum ov
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB
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28dBm
JS9P05-AS
38GHz
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Untitled
Abstract: No abstract text available
Text: Multiplier Diode Selection Guide 2.0 5.0 10 Output Frequency Range GHz 4-66 20 Multiplier Diode Selection Guide Device Family Available Output Power vs. Output Frequency Low Oder Multiplier N«s3 3 5 d b rT ^ ^ _ 28dbm DVA6735 ^36dbm 38dbn^^^ DVA6736 42dbm
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28dbm
DVA6735
38dbn^
36dbm
DVA6736
42dbm
DVA6737
DVA6738
D5244thru
D5259
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Untitled
Abstract: No abstract text available
Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q
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FLM1213-12F
-45dBc
28dBm
FLM1213-12F
FCSI0598M200
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FLM5964
Abstract: No abstract text available
Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q
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FLM5964-8D
-45dBc
28dBm
FLM5964-8D
FLM5964
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