Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLM5964 Search Results

    FLM5964 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FLM5964-12D Unknown FET Data Book Scan PDF
    FLM5964-12F Fujitsu C-Band Internally Matched FET Original PDF
    FLM5964-14/D Unknown FET Data Book Scan PDF
    FLM5964-18F Fujitsu C-Band Internally Matched FET Original PDF
    FLM5964-25D Unknown FET Data Book Scan PDF
    FLM5964-25F Fujitsu C-Band Internally Matched FET Original PDF
    FLM5964-35F Fujitsu MOSFET, C-Band Internally Matched FET Original PDF
    FLM5964-45F Unknown C-Band Internally Matched FET Original PDF
    FLM5964-4C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM5964-4C/D Unknown FET Data Book Scan PDF
    FLM5964-4D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM5964-4F Unknown C-Band Internally Matched FET Original PDF
    FLM5964-6D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM5964-6D Unknown FET Data Book Scan PDF
    FLM5964-6F Eudyna Devices FET Misc, C-Band Internally Matched FET Original PDF
    FLM5964-8C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM5964-8C/D Unknown FET Data Book Scan PDF
    FLM5964-8D Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM5964-8F Unknown C-Band Internally Matched FET Original PDF

    FLM5964 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm Typ. • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM5964-45F 50ohm FLM5964-45F 50ohm 25deg

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm Typ. • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package


    Original     		PDF FLM5964-8F/001 75GHz 50ohm FLM5964-8F/001 50ohm 25deg

    8002 1037

    Abstract: No abstract text available
    Text: FLM5964-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM5964-25F -46dBc FLM5964-25F FCSI0598M200 8002 1037

    FLM5964-12F

    Abstract: No abstract text available
    Text: FLM5964-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-12F -46dBc FLM5964-12F

    FLM5964-25F

    Abstract: No abstract text available
    Text: FLM5964-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-25F -46dBc FLM5964-25F

    ik 937

    Abstract: FLM5964-18F
    Text: FLM5964-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-18F -46dBc FLM5964-18F ik 937

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-12F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=41.5dBm Typ. • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package


    Original     		PDF FLM5964-12F/001 75GHz 50ohm FLM5964-12F/001 50ohm 25deg -250uA 65Idss 10MHz

    FLM5964-18F

    Abstract: No abstract text available
    Text: FLM5964-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-18F -46dBc FLM5964-18F FCSI0598M200

    gm 88

    Abstract: f1640 ED-4701 FLM5964-35F
    Text: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM5964-35F FLM5964-35F gm 88 f1640 ED-4701

    FLM5964-6F

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F

    EIAJ ED-4701

    Abstract: EUDYNA C-Band Eudyna Devices ED-4701 FLM5964-35F
    Text: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM5964-35F FLM5964-35F EIAJ ED-4701 EUDYNA C-Band Eudyna Devices ED-4701

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM5964-6F -46dBc FLM5964-6F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-4F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-4F -46dBc 5964-4F FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 10.0dB (Typ.) • High PAE: riadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-12F -46dBc FCSI0598M200

    5964-6D

    Abstract: No abstract text available
    Text: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-6D -45dBc 27dBm 5964-6D

    FLM5964

    Abstract: No abstract text available
    Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964

    FLM5964-18DA

    Abstract: 5964-18DA 5964-18D
    Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA

    cd 1691 cp

    Abstract: Y3015
    Text: F| .fjU-. FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 9.5dB (Typ.) High PAE: r iadd = 35% (Typ.) Low IM 3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-12DA -45dBc 30dBm FLM5964-12DA 3100mA cd 1691 cp Y3015

    FLM5964-12DA

    Abstract: No abstract text available
    Text: F, , FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-12DA 41dBm -45dBc 30dBm FLM5964-12DA

    Untitled

    Abstract: No abstract text available
    Text: F, , FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 31% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-4D 36dBm -45dBc 25dBm FLM5359-4D

    FLM5964-8C

    Abstract: No abstract text available
    Text: F|.fjU-,. FLM5964-8C I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed Package


    OCR Scan     		PDF FLM5964-8C FLM5964-8C

    FLM5964-4c

    Abstract: No abstract text available
    Text: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


    OCR Scan     		PDF FLM5964-4C 36dBm FLM5359-4C 1100mA FLM5964-4c

    Untitled

    Abstract: No abstract text available
    Text: F,¿¡U,. FLM5964-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-8C 5964-8C

    Untitled

    Abstract: No abstract text available
    Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-25DA UJ11bU 44dBm -45dBc 32dBm 5964-25D