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    ot 112

    Abstract: 48-PIN EL101 h1213
    Text: DENSE-PAC MICROSYS TE MS 2ñE D • 27ST41S 00Q1G17 S HIDPC DPL22V10A Dense-Pac Microsystems; Inc. PROGRAMMABLE LOGIC M ODULE D E SC R IP T IO N : The Dense-Pac Programmable Logic M odule DPL is a 48-pin Pin Grid Array (PGA) designed to support two "2 2 V 1 0 " field programmable array logic, 22 input, 10


    OCR Scan     		PDF 27ST41S DPL22V10A 48-pin 22V10" DPL22V10A) DPL22V1 24-pin 30A041-00 DPL22V10A L22V10 ot 112 EL101 h1213

    CIT- 20

    Abstract: DPS84H08-25C DPS84H08-25I DPS84H08-25M DPS84H08-55C ZIP-DPS4X16 4kx4 ram DPS88H16-25M 30A016-00
    Text: DENSE-PAC MICROSYSTEMS G7E D | 27ST41S OGOOIOD 1 I 4KX4 BASED Dense-Pac Microsystems, Inc. C M O S SR A M FA M ILY - D IP S -7 = D E SC R IP T IO N : - 7V The 4KX4 Based Family b part of a new line of high speed static RAM modules developed by Dense-Pac Microsys­


    OCR Scan     		PDF 27ST41S DPS84H08 DPS88H04 DPS88H08 DPS88H16 -16KX8 4KX16 NeedH16-55I DPS88H16-25M DPS88H16-45M CIT- 20 DPS84H08-25C DPS84H08-25I DPS84H08-25M DPS84H08-55C ZIP-DPS4X16 4kx4 ram 30A016-00

    Untitled

    Abstract: No abstract text available
    Text: 3 0A 0 3 7-01 B DENSE-PAC 1 Megabit High Speed CMOS SRAM DPS128M8En MICROSYSTEMS PRELIMINARY DESCRIPTION: The DPS128M8En is a very high speed 128K x 8 Static Random Access Memory SRAM fabricated with a CMOS silicon gate process. The memory utilizes asynchronouscircuitryand may be maintained in any


    OCR Scan     		PDF DPS128M8En DPS128M8En California92841-1428 30A037-01

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 8 Megabit UVEPROM DPV256X32V DESCRIPTION: The DPV256X32V is a 66-pin Pin Grid Array PGA consisting of four 256K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate w ith matched thermal coefficients.


    OCR Scan     		PDF DPV256X32V DPV256X32V 66-pin 1024KX8, 512KX 256KX32 250ns 125-C

    12 SQ 045 JF

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 1 Megabit UVEPROM DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.


    OCR Scan     		PDF DPV3232VA DPV3232VA 66-pin 250ns 128KX8, 64KX16 32KX32 E75R415 12 SQ 045 JF

    32 pin eprom cdi

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 4 M EGABIT FLASH EEPROM DPZ128X32VI/DPZ128X32VIP DESCRIPTION: T he D P Z 128X32V I/V IP is a 4 m egabit C M O S FLA SH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH m em ory devices. The D P Z 1 2 8 X 3 2 V I/V IP can be user


    OCR Scan     		PDF DPZ128X32VI/DPZ128X32VIP DPZ128X32VI/VIP DPZ128X32VI/DPZ128X32VIP 250ns 120mA 120ns 150ns 170ns 200ns 32 pin eprom cdi

    Dense-Pac Microsystems

    Abstract: NC-641
    Text: DENSE-PAC 32 Megabit FLASH EEPROM MICROSYSTEMS DPZ2MX16NV3 PRELIMINARY DESCRIPTION: The D PZ 2 M X 1 6 N V 3 "V E R S A - S T A C K " m odule is a revolutionary new memory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless Chip Carriers


    OCR Scan     		PDF DPZ2MX16NV3 X16NV3 120ns Dense-Pac Microsystems NC-641

    amd 29f010

    Abstract: DP5Z DP5Z12832VA
    Text: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM MICROSYSTEMS DP5Z12832VA/DP5Z12832VAP PRELIMINARY DESCRIPTION: The DP5Z12832VA/DP5Z12832VAP is a 4 megabit 5 volt CMOS Flash EEPRO M (Electrically In-System Programmable and Erasable ROM Memory) module. The module is built with four 128K x 8 FLASH


    OCR Scan     		PDF DP5Z12832VA/DP5Z12832VAP DP5Z12832VA/DP5Z12832VAP 512Kx 256Kx 128Kx32 128Kx32 120ns 120mA amd 29f010 DP5Z DP5Z12832VA

    512k x 4 cmos

    Abstract: No abstract text available
    Text: DENSE-PAC 4 Megabit C M O S SRAM M I C R O S Y S T E M S D P S 5 12 S 8 P / D P S 5 12 S 8 P L / D P S 5 12 S 8 P L L D E S C R IP T IO N : The DPS512S8P/PL/PLL is a 512K X 8 high-density, low-power static RAM module comprised of four 128K X 8 m onolithic S R A M 's , an advanced


    OCR Scan     		PDF DPS512S8P/DPS512S8PL/DPS512S8PLL DPS512S8P/PL/PLL DPS512S8P/PLypLLisavailablein 600-mil-wide, 32-pin DPS512S8P/P17PLL 500mV California92841-1428 OA034-00 512k x 4 cmos

    DQ2451

    Abstract: DPD16MS32P
    Text: DENSE-PAC 512 Megabit CMOS DRAM M I C R O S Y ST E M S DPD16MS32PW5 P R E L IM IN A R Y DESCRIPTION: The DPD16MS32PW5 is the 16 Meg x 32 Dynamic RAM module in the family of S u per SIM/VP modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of eight dynamic RAM stacks surface


    OCR Scan     		PDF DPD16MS32PW5 DPD16MS32PW5 72-pin 100ns 30A146-00 California92841-1428 30A146-00 DQ2451 DPD16MS32P

    Untitled

    Abstract: No abstract text available
    Text: 1 Megabit High Speed CMOS SRAM D EN SE-PA C DPS 128M8CnY/BnY, DPS128X8CA3/BA3 M I C R O S Y S T E M S DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .


    OCR Scan     		PDF 128M8CnY/BnY, DPS128X8CA3/BA3 DPS128X8CA3/BA3 50-pin 30A097-31 27ST41S

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 1 Megabit CM OS SRAM DPS128M8n3/DPS 128X8A3 DESCRIPTION: The DPS128M8nY & DPS 128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded,


    OCR Scan     		PDF DPS128M8n3/DPS 128X8A3 DPS128M8nY 128X8A3 50-pin 100ns 120ns 150ns California92841-1428 30A097-01

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 4 Megabit CMOS UVEPROM MICROSYSTEMS DPV12832VA DESCRIPTION: The DPV12832VA is a 66-pin Pin Grid Array PGA consisting o f four 128K X 8 CMOS UVEPROM devices in ceram ic LCC packages surface mounted on a co-fired ceram ic substrate w ith matched thermal


    OCR Scan     		PDF DPV12832VA DPV12832VA 66-pin 250nsC 30A014-62 27ST41S 000140b

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 2 Megabit CMOS SRAM MICROSYSTEMS DPS128X16n3 DESCRIPTION: The DPS128X16n3 SRAM "S T A C K " modules are a revolutionarynew memory subsystem using Dense-PacMicrosystems'ceramicStackable LeadlessChip Carriers SLCC . Available in straight leaded, " J " leaded


    OCR Scan     		PDF DPS128X16n3 DPS128X16n3 50-pin 100ns 120ns -f125â California92841-1428 30A097-02

    DPS512S8U

    Abstract: No abstract text available
    Text: DENSE-PAC 4 Megabit C M O S SRAM MICROSYSTEMS DPS512S8U D E S C R IP T IO N : The DPS512S8U is a 512KX 8 high-density,low-powerstaticRAM module comprised of four 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on an epoxy laminate substrate.


    OCR Scan     		PDF DPS512S8U DPS512S8U 150ns 120ns 36-PIN Californta92841-1428

    A1048

    Abstract: 1431 T WE 251
    Text: DENSE-PAC MICROSYSTEMS 8 Megabit CMOS SRAM DPS256 X 3 2 L/DPS256 X 32 W D ESC RIPTIO N : The D PS256X32L/D PS256X32W is a 256K x 32 high density, high-speed Static Random Access M em ory SRAM module, intended for high performance computers and digital signal


    OCR Scan     		PDF DPS256X32L/DPS256X32W DPS256X32IVD PS256X32W 64-Pin DPS256 L/DPS256 DPS256X32L/DPS256X32W 30A056-00 27ST41S A1048 1431 T WE 251

    68-PIN

    Abstract: No abstract text available
    Text: 12 Megabit High Speed CM OS SRAM D E N S E - P A C M I C R O S Y S T E M D P S 5 12 X 2 4 M F n 3 S ADVANCED INFORMATION D E S C R IP T IO N : SLCC Stack The DPS512X24MFn3 High Speed SRAM "ST A C K " modules are a revolutionary new memory subsystem using Dense-Pac


    OCR Scan     		PDF DPS512X24MFn3 DPS512X24MFn3 12-Megabits 500mV California92841-1428 275T41S 68-PIN

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICRO SYSTEMS D7E D | 575^415 □□□□17b T 8KX8T BASED Dense-Pac Microsystems, inc. CMOS EEPROM FAMILY DESCRIPTION: The DPE8KX8T family consists of Electrically Eraseable and Reprogrammable Read-Only Memories EEPROMs with popular, easy to use features.


    OCR Scan     		PDF 57ST415 detect55C DPE8M628T-70C DPE8M628T-90C DPE8M628T-55I DPE8M628T-70I DPE8M628T-90I DPE8M628T-55M DPE8M628T-70M DPE8M628T-90M

    Untitled

    Abstract: No abstract text available
    Text: D E N S E - P A 8 Megabit CMOS SRAM C MICROSYSTEMS DPS1MS8U DESCRIPTION: The DPS1MS8U is a 1Meg X 8 high-density, low-power static RAM module comprised of eight 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted


    OCR Scan     		PDF 1024K 150ns 100ns 120ns California92841-1428 30A082-01

    11-365

    Abstract: No abstract text available
    Text: DENSE-PAC 8 MEGABIT FLASH EEPROM M I C R O S Y S T E M S DPZ512X16ln3 D PZ512X16IY3 DESCRIPTION: The D PZ512X16ln3 "STACK“" modules are a revolutionary new m em ory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight


    OCR Scan     		PDF DPZ512X16lri3 DPZ512X16ln3 50-pin DPZ512X16ln3 120ns 150ns 170ns 200ns 250ns 30a071-11 11-365

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 4 Megabit High Speed CM OS SRAM D P S 5 1 2 S8 B N DESCRIPTIO N: T he DPS512S8BN is a high speed m ilita ry 512K X 8 high-density, static RAM m od ule comprised o f four high speed ceram ic 128K X 8 m o n o lith ic SRAM's, an advanced high-speed CMOS decoder and de cou pling


    OCR Scan     		PDF DPS512S8BN DPS512S8BN 600-mil-wide, 32-pin 512Kx8 125-C 275T41S 30A034-12

    Supply Control LAF 0001

    Abstract: laf 0001 power laf 0001 61YL RT1L 28X1 050I
    Text: DENSE-PAC 2 M EGABIT FLASH EEPROM M I C R O S Y S T E M S DPZ128X161Y/l IY/IJY/l H Y/lA3 D ESCRIPTIO N : T he DPZ1 2 8 X 1 6 1Y/l IY/IJ Y/l H Y/l A3 d evice s are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers


    OCR Scan     		PDF DPZ128X161 50-pin DPZ128X1 120ns 150ns 170ns 200ns 250ns 3QA071-13 Supply Control LAF 0001 laf 0001 power laf 0001 61YL RT1L 28X1 050I

    DPS512X8MKN3

    Abstract: No abstract text available
    Text: DENSE-PAC 4 Megabit High Speed CM OS SRAM DPS512X8MKN3 MICROSYSTEMS PRELIMINARY DESC R IPTIO N : The DPS512X8MKN3 High Speed SRAM "STACK" devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired


    OCR Scan     		PDF DPS512X8MKN3 DPS512X8MKN3 600-mil-wide, 32-pin 500mV 30a129-11 27SRM1S

    30A10

    Abstract: H1163
    Text: DENSE-PAC 8 Megabit CMOS DRAM MICROSYSTEMS DPD512X16M2H3 PRELIMINARY D E S C R IP T IO N : The D PD 5 1 2X16M2H3 "S T A C K " module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC stacked and leaded for surface


    OCR Scan     		PDF DPD512X16M2H3 DPD51 100ns 40-PiN 3QA108-13 DDD13S4 30A10 H1163