Untitled
Abstract: No abstract text available
Text: DENSE-PAC 1 Megabit UVEPROM M ICROSYSTEM S DPV3232VA DESCRIPTION; The DPV3232VA is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matched thermal coefficients.
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DPV3232VA
DPV3232VA
66-pin
32Kx32
250ns
128KX8,
64KX16
275R41S
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 16 Megabit CM OS SRAM MICROSYSTEMS DPS512X32ML/DPS512X32MW PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The DPS512X32ML/DPS512X32MW is a 512K x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high performance computers and digital signal processing
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DPS512X32ML/DPS512X32MW
DPS512X32ML/DPS512X32MW
72-Pin
PS512X32MW
30A14Ã
0001fl3M
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP MICROSYSTEMS DESCRIPTION: The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Flash E E P R O M (E le c tric a lly In-System Programmable and Erasable ROM memory) module. The module is built with four 128K x 8 FLASH memory
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DPZ128X32VT/DPZ128X32VTP
DPZ128X32VT/VTP
DPZ128X32VT
250ns
120mA
30A014-52-T
D1S31
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 8 Megabit UVEPROM DPV256X32V DESCRIPTION: The DPV256X32V is a 66-pin Pin Grid Array PGA consisting of four 256K X 8 UVEPROM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate w ith matched thermal coefficients.
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DPV256X32V
DPV256X32V
66-pin
1024KX8,
512KX
256KX32
250ns
125-C
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bma 023
Abstract: DPZ128X32IV3
Text: DENSE-PAC MICROSYSTEMS 4 M E G A B IT FLASH E EP R O M DPZ128X32IV3 D E S C R IP T IO N : The D PZ 1 2 8X 3 2 IV 3 "V E R S A - S T A C K " module ¡s a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers
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DPZ128X32IV3
DPZ128X32IV3
120ns
150ns
170ns
200ns
250ns
30a072-10
275T415
bma 023
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50-PIN
Abstract: DPS512X16A3
Text: DENSE-PAC MICROSYSTEMS 8 Megabits CM OS SRAM DPS512Xl6n3 D ESCRIPTIO N ; The DPS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded, "J" leaded
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DPS512Xl6n3
DPS512X16n3
50-pin
512Kx16
-40-C
125-C
100ns
120ns
DPS512X16A3
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 1 Megabit CMOS SRAM MICROSYSTEMS DPS3232V DESCRIPTION: The DPS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired ceramic substrate with matchi ng thermal coeffi cients. The LCCs
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DPS3232V
DPS3232V
66-pin
128Kx32
256Kx32,
128KX8,
64KX16
32KX32
30A014-10
275T415
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LJ016
Abstract: No abstract text available
Text: 4 Megabit CMOS SRAM DPS128X32XP/XHP ADVANCED INFORMATION DESCRIPTION: The DPS128X32XP/XHP is a 68-p'rn surface mount module consisting of four 128K x 8 SRAM devices in plastic TSO P packages surface mounted on a FR-4 substrate. The module is available with either “J"-Leads or
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DPS128X32XP/XHP
DPS128X32XP/XHP
68-pin
128Kx
I/00-I/031
1/016-1/packacc
-40-C
JOA16700
LJ016
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DQ2451
Abstract: DPD16MS32P
Text: DENSE-PAC 512 Megabit CMOS DRAM M I C R O S Y ST E M S DPD16MS32PW5 P R E L IM IN A R Y DESCRIPTION: The DPD16MS32PW5 is the 16 Meg x 32 Dynamic RAM module in the family of S u per SIM/VP modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of eight dynamic RAM stacks surface
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DPD16MS32PW5
DPD16MS32PW5
72-pin
100ns
30A146-00
California92841-1428
30A146-00
DQ2451
DPD16MS32P
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Untitled
Abstract: No abstract text available
Text: 1 Megabit High Speed CMOS SRAM D EN SE-PA C DPS 128M8CnY/BnY, DPS128X8CA3/BA3 M I C R O S Y S T E M S DESCRIPTION: The DPS 128M8CnY/BnY, DPS128X8CA3/BA3 High Speed SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .
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128M8CnY/BnY,
DPS128X8CA3/BA3
DPS128X8CA3/BA3
50-pin
30A097-31
27ST41S
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Untitled
Abstract: No abstract text available
Text: DENSE PAC 4 Megabit High Speed CMOS SRAM DPS256X16Cn3/DPS256X16Bn3 MICROSYSTEMS DESCRIPTION: The DPS256X16Cn3/DPS256X16Bn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .
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DPS256X16Cn3/DPS256X16Bn3
DPS256X16Cn3/DPS256X16Bn3
50-pin
DPS256X16Cn3/DPS256X16Bn3STACK
California92841-1428
30A097-34
275T41S
D0D1742
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 1 Megabit CM OS SRAM DPS128M8n3/DPS 128X8A3 DESCRIPTION: The DPS128M8nY & DPS 128X8A3 SRAM devices are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight leaded,
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DPS128M8n3/DPS
128X8A3
DPS128M8nY
128X8A3
50-pin
100ns
120ns
150ns
California92841-1428
30A097-01
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 8 Megabit CM OS SRAM DPS256S32AW MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: The DPS256S32AWisa256Kx 32 high-density,static RAM module comprised of eight 128K x 8 monolith icSRAM's, an advanced high-speed CMOS decoder, resistor network and decoupling capacitors surface mounted on a FR-4 SIMM
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DPS256S32AW
DPS256S32AWisa256Kx
DPS256S32AWoperatesfrom
256Kx
California92841-1428
30A093-10
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DPZ1MX16n
Abstract: 30A117 DPZ1M
Text: DENSE-PAC 32 M EGABIT FLASH EEPROM MICROSYSTEMS DPZ2M X16Nn3 PRELIMINARY D E S C R IP T IO N : The D PZ2M X16N n3 " S T A C K " modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . A vailable in straight leaded, " J " leaded or gullwing leaded
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DPZ2MX16Nn3
50-pin
32-Megabits
DPZ2MX16Nn3
120ns
30A117-04
0001S7Ã
DPZ1MX16n
30A117
DPZ1M
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Untitled
Abstract: No abstract text available
Text: 16 Megabit High Speed CMOS SRAM D E N S E - P A C M I C R O S Y S T DPS512X32MFn3 E M S ADVANCED INFORMATION SLCC Stack D E S C R IP T IO N : The DPS512X32MFn3 High Speed SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC .
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DPS512X32MFn3
DPS512X32MFn3
16-Megabits
500mV
California92841-1428
275T415
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Untitled
Abstract: No abstract text available
Text: 1 Megabit CMOS SRAM PENSE-PAC MICROSYSTEMS DPS3232V D E SC R IP TIO N : The D PS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K x 8 SRAM devices in ceramic L C C packages surface mounted on a co-fired ceramic substratewith matching thermal coefficients. The LCCs
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DPS3232V
66-pin
128Kx32
256Kx32,
30A014-10
DD0121fl
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30A10
Abstract: H1163
Text: DENSE-PAC 8 Megabit CMOS DRAM MICROSYSTEMS DPD512X16M2H3 PRELIMINARY D E S C R IP T IO N : The D PD 5 1 2X16M2H3 "S T A C K " module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC stacked and leaded for surface
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DPD512X16M2H3
DPD51
100ns
40-PiN
3QA108-13
DDD13S4
30A10
H1163
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1431 T
Abstract: No abstract text available
Text: 8 Megabit CM O S SRAM D E N S E - P A C D P S 1M S 8M P M I C R O S Y S T E M S DESCRIPTION: The D P S 1 M S 8 M P is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted on
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600-mil-wide
32-pin
30A143-00
27Sims
1431 T
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