Untitled
Abstract: No abstract text available
Text: New Product SiA462DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC • TrenchFET Power MOSFET • 100 % Rg Tested
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SiA462DJ
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQ4917EY www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0480 RDS(on) () at VGS = - 4.5 V 0.0612 ID (A) per leg -8 Configuration
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SQ4917EY
AEC-Q101
SQ4917EY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VJ Commercial
Abstract: No abstract text available
Text: VJ Commercial Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Commercial Applications FEATURES • C0G NP0 and X7R/X5R dielectrics offered • C0G (NP0) is an ultra-stable dielectric offering a very low Temperature Coefficient
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Original
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PDF
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VJ Commercial
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SUD50P10-43L
Abstract: 73501
Text: SPICE Device Model SUD50P10-43L www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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SUD50P10-43L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SUD50P10-43L
73501
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA432DJ www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiA432DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SUD50P04-08
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA426DJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiA426DJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA429DJT www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiA429DJT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD50N06-09L www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET, Logic Level DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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SUD50N06-09L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration
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SiHD6N65E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration
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SiHP6N65E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiHU6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration
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SiHU6N65E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7980DP Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 20 Channel-2 20 ID (A)a, f 8 8 8 8 RDS(on) () 0.022 at VGS = 10 V 0.025 at VGS = 4.5 V 0.015 at VGS = 10 V 0.019 at VGS = 4.5 V Qg (Typ.)
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Si7980DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VJ OMD Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitor Solutions for Boardflex Sensitive Applications FEATURES • Open Mode Design OMD reduces risk of shorts or leakage in board flex applications • Excellent reliability and thermal shock
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PDF
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 COLOR: WHITE PITCH: 4.20MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS Recommenced Panel Cut-out Thickness = 1,40 ±0,40
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Original
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PDF
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UL94-V0
1500VAC/MN
E323964
09-OCT-13
25-MAR-13
18-NOV-09
24-JUN-09
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA433EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiA433EDJ
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD50P08-25L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SUD50P08-25L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD09P10-195 www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SUD09P10-195
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD45P04-16P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SUD45P04-16P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si9407BDY www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si9407BDY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si2371EDS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.045 at VGS = - 10 V - 4.8 0.053 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.6 a Qg (Typ.) 10.6 nC TO-236 (SOT-23) G APPLICATIONS
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Si2371EDS
O-236
OT-23)
Si2371EDS-T1-electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 COLOR: BLACK PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS Recommenced Panel Cut-out Thickness = 1,95 ±0,25
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Original
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PDF
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UL94-V0
E323964
24-JUL-14
09-OCT-13
25-MAR-13
27-SEP-12
06-JUL-12
18-NOV-09
23-AVR-09
|
C100000
Abstract: VJ Commercial Series VJ Commercial
Text: VJ Commercial Series www.vishay.com Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors for Commercial Applications FEATURES • C0G NP0 and X7R/X5R dielectrics offered • C0G (NP0) is an ultra-stable dielectric offering a very low Temperature Coefficient
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Original
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PDF
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
C100000
VJ Commercial Series
VJ Commercial
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R A LL 2 P U B L IC A T IO N LOC D IS T R IG H TS AD 00 RESERVED. C O P Y R IG H T REVISIONS D E S C R IP T IO N A3 PER E C O - 13 - 0 0 3 9 6 3 KH 25MAR13 HS 14.22 [.560] 2 0 .0 6 [.790] REF D
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OCR Scan
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25MAR13
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