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    SIHP6N65E Price and Stock

    Vishay Siliconix SIHP6N65E-GE3

    MOSFET N-CH 650V 7A TO220AB
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    DigiKey SIHP6N65E-GE3 Tube 1,000
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    • 1000 $0.9664
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    Vishay Intertechnologies SIHP6N65E-GE3

    N-CHANNEL 650V - Tape and Reel (Alt: SIHP6N65E-GE3)
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    Avnet Americas SIHP6N65E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHP6N65E-GE3 970
    • 1 $2.34
    • 10 $1.68
    • 100 $1.27
    • 1000 $0.93
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    Newark SIHP6N65E-GE3 Bulk 1,000 1
    • 1 $2.4
    • 10 $2.05
    • 100 $1.69
    • 1000 $1.47
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    TME SIHP6N65E-GE3 1
    • 1 $1.87
    • 10 $1.57
    • 100 $1.19
    • 1000 $1.1
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    EBV Elektronik SIHP6N65E-GE3 19 Weeks 50
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    SIHP6N65E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP6N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7A TO220AB Original PDF

    SIHP6N65E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original     		SiHP6N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original     		SiHP6N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.6 48 Qgs (nC) 6 Qgd (nC) 11 Configuration


    Original     		SiHP6N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP6N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP6N65E AN609, 5208m 5413m 9301m 2238m 30-Jan-13 PDF