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    SI2371EDS Price and Stock

    Vishay Siliconix SI2371EDS-T1-GE3

    MOSFET P-CH 30V 4.8A SOT-23
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    DigiKey SI2371EDS-T1-GE3 Cut Tape 15,298 1
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    SI2371EDS-T1-GE3 Digi-Reel 15,298 1
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    RS SI2371EDS-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI2371EDS-T1-GE3 357,000 1
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    Vishay Intertechnologies SI2371EDS-T1-GE3

    Trans MOSFET P-CH 30V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2371EDS-T1-GE3)
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    Avnet Americas SI2371EDS-T1-GE3 Reel 27,000 20 Weeks 3,000
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    Mouser Electronics SI2371EDS-T1-GE3 751,351
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    Newark SI2371EDS-T1-GE3 Cut Tape 5,745 5
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    Quest Components SI2371EDS-T1-GE3 2,400
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    SI2371EDS-T1-GE3 2,400
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    SI2371EDS-T1-GE3 2,400
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    SI2371EDS-T1-GE3 2,400
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    SI2371EDS-T1-GE3 880
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    SI2371EDS-T1-GE3 880
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    TTI SI2371EDS-T1-GE3 Reel 45,000 3,000
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    TME SI2371EDS-T1-GE3 1
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    Chip 1 Exchange SI2371EDS-T1-GE3 31,200
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    Avnet Asia SI2371EDS-T1-GE3 15,000 21 Weeks 3,000
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    SI2371EDS-T1-GE3 Cut Tape 1,960
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    EBV Elektronik SI2371EDS-T1-GE3 21 Weeks 3,000
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    Wuhan P&S SI2371EDS-T1-GE3 24,000 1
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    Vishay Intertechnologies SI2371EDS-T1-BE3

    Transistor MOSFET P-CH 30V 4.8A 3-Pin SOT-23 - Tape and Reel (Alt: SI2371EDS-T1-BE3)
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    Avnet Americas SI2371EDS-T1-BE3 Reel 9,000 20 Weeks 3,000
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    Mouser Electronics SI2371EDS-T1-BE3 137,237
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    Newark SI2371EDS-T1-BE3 Bulk 3,000
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    Quest Components SI2371EDS-T1-BE3 9
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    SI2371EDS-T1-BE3 9
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    TTI SI2371EDS-T1-BE3 Reel 3,000 3,000
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    Chip1Stop SI2371EDS-T1-BE3 15,000
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    EBV Elektronik SI2371EDS-T1-BE3 21 Weeks 3,000
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    Diotec Semiconductor AG SI2371EDS

    Mosfet Transistor, P Channel, -4.8 A, -30 V, 0.037 Ohm, -10 V, -1.5 V |Vishay SI2371EDS-T1-GE3
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    Onlinecomponents.com SI2371EDS
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    Diotec Semiconductor AG SI2371EDS-T1-GE3

    Mosfet Transistor, P Channel, -4.8 A, -30 V, 0.037 Ohm, -10 V, -1.5 V |Vishay SI2371EDS-T1-GE3
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    Onlinecomponents.com SI2371EDS-T1-GE3
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    SI2371EDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2371EDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.8A SOT-23 Original PDF

    SI2371EDS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2371EDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2371EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2371EDS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.045 at VGS = - 10 V - 4.8 0.053 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.6 a Qg (Typ.) 10.6 nC TO-236 (SOT-23) G APPLICATIONS


    Original     		PDF Si2371EDS O-236 OT-23) Si2371EDS-T1-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406