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    SIA433EDJ Price and Stock

    Vishay Siliconix SIA433EDJ-T1-GE3

    MOSFET P-CH 20V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA433EDJ-T1-GE3 Cut Tape 7,990 1
    • 1 $0.84
    • 10 $0.565
    • 100 $0.84
    • 1000 $0.28211
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    SIA433EDJ-T1-GE3 Digi-Reel 7,990 1
    • 1 $0.84
    • 10 $0.565
    • 100 $0.84
    • 1000 $0.28211
    • 10000 $0.28211
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    SIA433EDJ-T1-GE3 Reel 6,000 3,000
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    RS SIA433EDJ-T1-GE3 Bulk 3,000
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    Vishay Intertechnologies SIA433EDJ-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA433EDJ-T1-GE3)
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    Avnet Americas SIA433EDJ-T1-GE3 Reel 24,000 21 Weeks 3,000
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    Mouser Electronics SIA433EDJ-T1-GE3 7,806
    • 1 $0.53
    • 10 $0.427
    • 100 $0.326
    • 1000 $0.265
    • 10000 $0.225
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    Verical SIA433EDJ-T1-GE3 3,000 3,000
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    SIA433EDJ-T1-GE3 3,000 3,000
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    SIA433EDJ-T1-GE3 808 26
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    Arrow Electronics SIA433EDJ-T1-GE3 3,000 21 Weeks 3,000
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    SIA433EDJ-T1-GE3 Cut Strips 808 21 Weeks 1
    • 1 $0.3976
    • 10 $0.3596
    • 100 $0.2947
    • 1000 $0.2308
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    Newark SIA433EDJ-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.271
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    SIA433EDJ-T1-GE3 Cut Tape 3,000
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    • 1000 $0.333
    • 10000 $0.333
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    Bristol Electronics SIA433EDJ-T1-GE3 10
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    TTI SIA433EDJ-T1-GE3 Reel 12,000 3,000
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    TME SIA433EDJ-T1-GE3 3,000
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    Avnet Asia SIA433EDJ-T1-GE3 9,000 23 Weeks 3,000
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    EBV Elektronik SIA433EDJ-T1-GE3 22 Weeks 3,000
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    Vishay Huntington SIA433EDJ-T1-GE3

    MOSFET P-CH 20V 12A SC-70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA433EDJ-T1-GE3 3,591
    • 1 -
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    • 1000 $0.2605
    • 10000 $0.2336
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    SIA433EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA433EDJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 12A SC-70-6 Original PDF

    SIA433EDJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: SiA433EDJ
    Text: SiA433EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiA433EDJ AN609, 11-Jan-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA433EDJ www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA433EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA433EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 12a 0.026 at VGS = - 2.5 V - 12a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC PowerPAK SC-70-6L-Single 1 D 3


    Original     		PDF SiA433EDJ SC-70-6L-Single SC-70 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiA433EDJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA433EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA433EDJ 18-Jul-08

    3.5b zener diode

    Abstract: SiA433EDJ SiA433EDJ-T1-GE3
    Text: New Product SiA433EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 12a 0.026 at VGS = - 2.5 V - 12a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC PowerPAK SC-70-6L-Single 1 D 3


    Original     		PDF SiA433EDJ SC-70-6L-Single SC-70 2002/95/EC 18-Jul-08 3.5b zener diode SiA433EDJ-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA433EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 12a 0.026 at VGS = - 2.5 V - 12a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC PowerPAK SC-70-6L-Single D 1 3


    Original     		PDF SiA433EDJ SC-70-6L-Single SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA433EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 12a 0.026 at VGS = - 2.5 V - 12a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC PowerPAK SC-70-6L-Single 1 D 3


    Original     		PDF SiA433EDJ SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA433EDJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 12a 0.026 at VGS = - 2.5 V - 12a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC PowerPAK SC-70-6L-Single 1 D 3


    Original     		PDF SiA433EDJ SC-70 2002/95/EC SC-70-6L-Single 11-Mar-11

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    SI4497

    Abstract: No abstract text available
    Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm


    Original     		PDF SC-75 VMN-PT0197-1006 SI4497