HY27UG
Abstract: hynix nand HY27UG084G2M
Text: Preliminary HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005
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HY27UG
512Mx8bit
256Mx16bit)
hynix nand
HY27UG084G2M
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256Mx16bit
Abstract: W352 hy27uh084g2m
Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
256Mx16bit
W352
hy27uh084g2m
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HY27UG084G2M
Abstract: HY27UG164G2M 52-ULGA hynix nand 4G HY27UG HY27UG084G2 HY27UG084GDM HY27UG084G
Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary
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HY27UG
512Mx8bit
256Mx16bit)
HY27UG084G2M
HY27UG164G2M
52-ULGA
hynix nand 4G
HY27UG084G2
HY27UG084GDM
HY27UG084G
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HY27UH084G2M
Abstract: No abstract text available
Text: Preliminary HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
HY27UH084G2M
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HY27UG084G2M
Abstract: HY27UG hynix nand 4G HY27UG164G2M uLGA 52-ULGA
Text: HY27UG 08/16 4G(2/D)M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 History Initial Draft. Draft Date Remark May. 13. 2005 Preliminary May. 23. 2005 Preliminary
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HY27UG
512Mx8bit
256Mx16bit)
HY27UG084G2M
hynix nand 4G
HY27UG164G2M
uLGA
52-ULGA
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HY27UH084G2M
Abstract: NAND FLASH QDP hynix hy27 "nand flash"
Text: HY27UH 08/16 4G2M Series HY27SH(08/16)4G2M Series 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Document Title 4Gbit (512Mx8bit / 256Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Feb. 04. 2004 Preliminary
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HY27UH
HY27SH
512Mx8bit
256Mx16bit)
table14)
100ns
HY27UH084G2M
NAND FLASH QDP
hynix hy27 "nand flash"
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NAND Flash
Abstract: No abstract text available
Text: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit
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F59D4G81A
F59D4G161A
16bit
NAND Flash
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MR36V04G54S
Abstract: No abstract text available
Text: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54S-002-01
MR36V04G54S
MR36V04G54S
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54B-002-01
MR36V04G54B
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54S-002-01
MR36V04G54S
D31/A-1
128Mx32
256Mx16-bit
32-Bit
16-word
16-Bit
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K9K4G08U0M-YCB0
Abstract: K9K4G16U0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08Q0M-YCB0 K9K4G08U0M
Text: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003
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K9K4G08Q0M-YCB0
K9K4G16Q0M-YCB0
K9K4G08U0M-YCB0
K9K4G16U0M-YCB0
K9K4G08U0M
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K9XXG08XXM
Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9K4G08Q0M-PCB0 K9K4G16Q0M k9w8g16u1m K9K4G08Q0M K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16U0M K9W8G08U1M
Text: K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package
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K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9W8G16U1M-YCB0
K9K4G08Q0M-PCB0
K9XXG08XXM
SAMSUNG 4gb NAND Flash Qualification Report
K9K4G08Q0M-PCB0
K9K4G16Q0M
k9w8g16u1m
K9K4G08Q0M
K9K4G08U0M
K9K4G08U0M-PCB0
K9K4G16U0M
K9W8G08U1M
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54B-002-01
MR36V04G54B
D31/A-1
128Mx32
256Mx16-bit
32-Bit
16-word
16-Bit
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54S-002-01 Issue Date: Aug. , 2009 MR36V04G54S 128M–Word 32–Bit Page Mode P2ROM FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply ·Random Access time
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FEDR36V04G54S-002-01
MR36V04G54S
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
Text: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package
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K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
K9W8G16U1M-YCB0
K9K4G08Q0M-PCB
SAMSUNG 4gb NAND Flash Qualification Report
K9K4G08U0M
K9K4G08Q0M
K9K4G08Q0M-PCB0
K9K4G08U0M-PCB0
K9K4G16Q0M
K9K4G16U0M
K9W8G08U1M
nand hamming code 2k bytes
k9xxg16xxm
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Untitled
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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256Mx16
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR36V04G54B-002-01
MR36V04G54B
256Mx16
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K9K4G08X0M
Abstract: ecc 2112 samsung 8GB Nand flash
Text: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Feb. 19. 200 3
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K9K4G08Q0M-YCB0
K9K4G16Q0M-YCB0
K9K4G08U0M-YCB0
K9K4G16U0M-YCB0
K9K4G08X0M
ecc 2112
samsung 8GB Nand flash
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