NAND Flash
Abstract: No abstract text available
Text: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit
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F59D4G81A
F59D4G161A
16bit
NAND Flash
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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F59D4G81A
250us
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F59D4G81A
Abstract: No abstract text available
Text: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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PDF
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F59D4G81A
4bit/512Byte
F59D4G81A
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Untitled
Abstract: No abstract text available
Text: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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PDF
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F59D4G81A
250us
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