Untitled
Abstract: No abstract text available
Text: MEMORY MODULE DDR3 SDRam 128Mx32-BGA 3D3D4G32YB2495 DDR3 Synchronous Dynamic Ram 4Gbit DDR3 SDRam organized as 128Mx32 Pin Assignment Top View BGA 136 (Pitch : 0.80 mm) Main applications: • Embedded Systems Workstations Servers Super Computers
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128Mx32-BGA
3D3D4G32YB2495
128Mx32
3DFP-0495-REV
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MR36V04G54S
Abstract: No abstract text available
Text: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54S-002-01
MR36V04G54S
MR36V04G54S
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Untitled
Abstract: No abstract text available
Text: SG532288FG8NWUU October 5, 2007 Ordering Information Part Numbers Description Module Speed SG532288FG8NWDB 128Mx32 512MB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 128Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant).
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SG532288FG8NWUU
SG532288FG8NWDB
128Mx32
512MB)
200-pin
128Mx8
DDR2-400-333,
PC2-3200
SG532288FG8NWDG
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Untitled
Abstract: No abstract text available
Text: SG532283FG8NWUU Preliminary Ordering Information Part Numbers Description Module Speed SG532283FG8NWDB 128Mx32 512MB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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SG532283FG8NWUU
SG532283FG8NWDB
128Mx32
512MB)
200-pin
64Mx16
DDR2-400-333,
PC2-3200
SG532283FG8NWDG
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word x 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54B-002-01
MR36V04G54B
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54S-002-01 Issue Date: Aug.０１, 2009 MR36V04G54S 128M–Word 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54S-002-01
MR36V04G54S
D31/A-1
128Mx32
256Mx16-bit
32-Bit
16-word
16-Bit
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54B-002-01 Issue Date: Oct.01, 2008 MR36V04G54B 128M–Word 32–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 128Mx32 or 256Mx16-bit electrically switchable configuration · Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply
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FEDR36V04G54B-002-01
MR36V04G54B
D31/A-1
128Mx32
256Mx16-bit
32-Bit
16-word
16-Bit
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Untitled
Abstract: No abstract text available
Text: FEDR36V04G54S-002-01 Issue Date: Aug. , 2009 MR36V04G54S 128M–Word 32–Bit Page Mode P2ROM FEATURES 128Mx32 or 256Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit · 3.0 V to 3.6 V power supply ·Random Access time
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FEDR36V04G54S-002-01
MR36V04G54S
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Untitled
Abstract: No abstract text available
Text: SU5322885D8F0CL January 17, 2005 Ordering Information Part Numbers Description Module Speed SM5322885D8F0CL 128Mx32 512MB , DDR, 100-pin DIMM, Unbuffered, 64Mx8 Based, Non-ECC, DDR333B, 30.48mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5322885D8F0CL 128Mx32 (512MB), DDR, 100-pin DIMM, Unbuffered, 64Mx8
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SU5322885D8F0CL
SM5322885D8F0CL
SB5322885D8F0CL
128Mx32
512MB)
100-pin
64Mx8
DDR333B,
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Untitled
Abstract: No abstract text available
Text: SU5322885D8F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5322885D8F0CG 128Mx32 512MB , DDR, 100-pin DIMM, Unbuffered, 64Mx8 Based, Non-ECC, DDR266A, 30.48mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5322885D8F0CG 128Mx32 (512MB), DDR, 100-pin DIMM, Unbuffered, 64Mx8
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SU5322885D8F0CU
SM5322885D8F0CG
SB5322885D8F0CG
128Mx32
512MB)
100-pin
64Mx8
DDR266A,
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H5GQ4H24MFR-R2C
Abstract: H5GQ2H24AFR-R0C H5GC4H24MFR-T2C H5GQ1H24BFR-R0C H5GQ1H24BFR-T2C H5GC2H24BFR-T2C H5TQ2G63DFR-11c H5GQ2H24AFR-T2C H5TC4G63AFR-11C H5TQ2G63FFR
Text: Page 1 DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.1GHz 0.9ns H5TQ4G63AFR-N1C FBGA(96ball) 8Bank, 1.5V/ 1.5V Now 1.0GHz (1.0ns) H5TC4G63AFR-N0C FBGA(96ball) 8Bank, 1.35V/ 1.35V Now FBGA(96ball) 8Bank, 1.5V/ 1.5V Now FBGA(96ball) 8Bank, 1.35V/ 1.35V
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H5TQ4G63AFR-N1C
96ball)
H5TC4G63AFR-N0C
256Mx16
H5TC4G63AFR-11C
900MHz
H5GQ4H24MFR-R2C
H5GQ2H24AFR-R0C
H5GC4H24MFR-T2C
H5GQ1H24BFR-R0C
H5GQ1H24BFR-T2C
H5GC2H24BFR-T2C
H5TQ2G63DFR-11c
H5GQ2H24AFR-T2C
H5TC4G63AFR-11C
H5TQ2G63FFR
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Untitled
Abstract: No abstract text available
Text: SM57228457HE83R01 July 3, 2002 Orderable Part Numbers Module Part Number SM57228457HE83R01 Description 128Mx72 1GB , SDRAM, 168-pin DIMM Registered, 128Mx4 (Stacked- two 64Mx4) Based, CL=4 (Device =3), PC133, 30.48mm. Revision History • July 3, 2002 Modified mechanical drawing on page 11.
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SM57228457HE83R01
SM57228457HE83R01
128Mx72
168-pin
128Mx4
64Mx4)
PC133,
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FBGA DDR3 x32
Abstract: "DDR3 SDRAM" MCP DDR3 CKE01 128Mx32 W3J64M72G-XSBX zq transistor DDR2 128M x 32 intel 3601 ddr3 udqs
Text: 512MByte DDR3 SDRAM 4 Gbit The W3J64M64G-XSBX, W3J64M72G-XSBX, W3J128M32G-XSBX, and W3J2128M16G-XSBX are the introductory devices of WEDC’s high density/high performance family of DDR3 SDRAM’s designed to support high performance processors, and chipsets
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512MByte
W3J64M64G-XSBX,
W3J64M72G-XSBX,
W3J128M32G-XSBX,
W3J2128M16G-XSBX
352mm2
2x128Mx16
DQ0-63
DQ0-15
FBGA DDR3 x32
"DDR3 SDRAM"
MCP DDR3
CKE01
128Mx32
W3J64M72G-XSBX
zq transistor
DDR2 128M x 32
intel 3601
ddr3 udqs
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K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from
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BR-12-ALL-001
K4X2G323PD8GD8
K9HFGY8S5A-HCK0
K4H511638JLCCC
samsung eMMC 5.0
KLMBG4GE2A-A001
K9K8G08U0D-SIB0
K4X51163PK-FGD8
KLMAG2GE4A
k4h561638n-lccc
K4G10325FG-HC03
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Untitled
Abstract: No abstract text available
Text: SM572284578E8UP01 July 3, 2002 Orderable Part Numbers Module Part Number Description SM572284578E8BP01 128Mx72 1GB , SDRAM, 168-pin DIMM Registered, 128Mx4 ( Stacked- two 64Mx4) Based, CL= 2 & 3, PC100, 30.48mm SM572284578E83P01 128Mx72 (1GB), SDRAM, 168-pin DIMM Registered, 128Mx4
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SM572284578E8UP01
SM572284578E8BP01
SM572284578E83P01
128Mx72
168-pin
128Mx4
64Mx4)
PC100,
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Untitled
Abstract: No abstract text available
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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K4G41325FC
Abstract: K4G41325F samsung GDDR5 K4G10325FG-HC03 gddr5 samsung K4W4G1646 256MX16 K4G20325FD
Text: Nov. 2012 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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K4W2G1646E
BC1A/11
K4W4G1646B
A/11/12
K4J10324KG
HC1A/14
32Mx32
8K/32ms
K4G10325FG
HC03/04/05
K4G41325FC
K4G41325F
samsung GDDR5
K4G10325FG-HC03
gddr5 samsung
K4W4G1646
256MX16
K4G20325FD
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Untitled
Abstract: No abstract text available
Text: SM572284578E83R01 July 3, 2002 Orderable Part Numbers Module Part Number SM572284578E83R01 Description 128Mx72 1GB , SDRAM, 168-pin DIMM Registered, 128Mx4 ( Stacked- two 64Mx4) Based, CL=4 (Device =3), PC133, 30.48mm Revision History • July 3, 2002 Modified mechanical drawing on page 11.
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SM572284578E83R01
SM572284578E83R01
128Mx72
168-pin
128Mx4
64Mx4)
PC133,
page11.
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256Mx16
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR36V04G54B-002-01
MR36V04G54B
256Mx16
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samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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